Diodes DMN3065LW User Manual

Product Summary

Package

SOT323 4A

V

(BR)DSS

30V

R

52m @ V
65m @ VGS = 4.5V
85m @ VGS = 2.5V

DS(ON)

GS

= 10V

Applications

• DC-DC Converters

• Power Management Functions

• Battery Operated Systems and Solid-State Relays

SOT323

Top View

DMN3065LW

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features

I

D max

TA = +25°C

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT323

• Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe.

e3

• Terminal Connections: See Diagram

• Weight: 0.006 grams (approximate)

D

GS

Pin Configuration

Top View

Solderable per MIL-STD-202, Method 208

D

G

S

Equivalent CircuitI

Ordering Information (Note 4)

Part Number Case Packaging

DMN3065LW-7 SOT323 3000/Tape & Reel

DMN3065LW-13 SOT323 10000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year 2012 2013 2014 2015 2016 2017 2018

Code Z A B C D E F

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

N35

DMN3065LW

Document number: DS36078 Rev. 5 - 2

N35 = Product Type Marking Code
YM = Date Code Marking

YM

Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)

1 of 5

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April 2014

© Diodes Incorporated

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit

Drain Source Voltage

Gate-Source Voltage

Drain Current (Note 5)

Body-Diode Continuous Current (Note 5)

V

DSS

V

GSS

ID

IS

Thermal Characteristics

Characteristic Symbol Value Unit

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5) R

Operating and Storage Temperature Range

P

T

J, TSTG

JA

D

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage

BV

I

I

DSS

DSS

GSS

30

⎯ ⎯

⎯ ⎯

⎯ ⎯

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Source-Drain Diode Forward Voltage

V

GS(th)

R

DS (ON)

V

SD

0.5

⎯
⎯

⎯

⎯

⎯

⎯

⎯ ⎯

DYNAMIC CHARACTERISTICS(7)

Input Capacitance Ciss

Output Capacitance Coss

Reverse Transfer Capacitance Crss

Gate Resistance

Total Gate Charge (VGS=10V)

Total Gate Charge (VGS=4.5V)

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout

6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to production testing.

R

Q

Q

Q

Q

t

D(on)

t

D(off)

gs

gd

t

r

t

f

⎯

g

g

⎯

g

⎯

⎯

⎯

⎯

⎯

⎯

⎯

⎯

⎯

⎯

465

49.5

43.8

2.3

11.7

5.5

1.1

1.8

1.9

1.6

10.3

2.0

DMN3065LW

Document number: DS36078 Rev. 5 - 2

2 of 5

www.diodes.com

30 V

±12

4 A

1 A

770 mW

162 °C/W

-55 to +150 °C

V

1 µA

±100

nA

1.5 V

52
65

m

85

1.2 V

⎯

⎯

⎯

⎯

⎯

⎯

⎯

⎯

⎯

⎯

⎯

⎯

pF

pF

pF



nC

nC

nC

nC

ns

ns

ns

ns

DMN3065LW

V

V

= 0V, ID = 250µA

GS

V

= 30V, VGS = 0V

DS

VGS = ±12V, VDS = 0V

VDS = VGS, ID = 250µA

VGS = 10V, ID = 4A
VGS = 4.5V, ID = 3A
VGS = 2.5V, ID = 2A

VGS = 0V, IS = 2.0A

VDS = 15V, VGS = 0V, f =

1.0MHz

VDS =0V, VGS = 0V, f = 1MHz

VDS = 15V, ID = 4 A

= 15V, ID = 4 A

V

DS

= 15V, V

V

DD

=3, RL = 3.75

R

GEN

= 10V,

GEN

© Diodes Incorporated

April 2014