Diodes DMN3053L User Manual

Product Summary

V

R

(BR)DSS

30V

45m @ V

50m @ VGS = 4.5V

DS(ON)

GS

= 10V

Description

This new generation MOSFET has been designed to minimize the

on-state resistance (R

performance, making it ideal for high efficiency power management

applications.

Applications

NEW PRODUCT

 Load Switch

 DC-DC Converters

 Power management functions

ESD PROTECTED

) and yet maintain superior switching

DS(ON)

SOT23

Top View

I

D

TA = +25°C

4.0 A

3.5A

DMN3053L

N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

 Low On-Resistance

 Low Gate Threshold Voltage

 Low Input Capacitance

 Fast Switching Speed

 Low Input/Output Leakage

 ESD Protected Gate

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SOT23

 Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals: Finish – Matte Tin annealed over Copper

leadframe. Solderable per MIL-STD-202, Method 208

 Terminal Connections: See Diagram

 Weight: 0.008 grams (approximate)

D

S

Equivalent Circuit

G

Top View

e3

Ordering Information (Note 4)

Part Number Case Packaging

DMN3053L-7 SOT23 3000/Tape & Reel

DMN3053L-13 SOT23 10000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017

Code U V W X Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

Chengdu A/T Site

Shanghai A/T Site

DMN3053L

Document number: DS36883 Rev. 2 - 2

3N6 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)

1 of 6

www.diodes.com

April 2014

© Diodes Incorporated

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (Note 6) VGS = 10V

Steady

State

Pulsed Drain Current (10µs pulse, duty cycle = 1%)

Maximum Body Diode Forward Current (Note 6)

Thermal Characteristics

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)

NEW PRODUCT

Thermal Resistance, Junction to Ambient (Note 5)

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6)

Operating and Storage Temperature Range

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage

BV

DSS

I

 

DSS

I

GSS

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Source-Drain Diode Forward Voltage

V

GS(th)

R

DS (ON)

V



SD

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

C

iss

C

oss

C



rss

R

g



Total Gate Charge (VGS = 4.5V) Qg

Total Gate Charge (VGS = 10V) Qg

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.

6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2 oz. Copper, single sided.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

DMN3053L

Document number: DS36883 Rev. 2 - 2

Q

gs

Q

gd

t



D(on)

t

r

t



D(off)

t



f

www.diodes.com

T

= +25°C

A

= +70°C

T

A

T

TA = +70°C

Steady state

T

TA = +70°C

Steady state

30

 

0.6

















2 of 6

V

DSS

V

GSS

I

D

I

DM

I

S

= +25°C

A

t<10s

= +25°C

A

t<10s

P

R

R

P

R

R

T

J, TSTG

JA

JA

JA

JA

 

1 µA

±10 µA



36
38
42
44

1.4 V

45
50
53
55

0.7 1.2 V

676

54

42

15.5

7.3

17.2

1.2

0.9

2.0

5.5

152

32

























DMN3053L

30 V

±12 V

4.0

3.5

35 A

1.5 A

D

D

V

0.76

0.48

165 °C/W

114 °C/W

1.2

0.8

100 °C/W

69 °C/W

-55 to +150 °C

V

= 0V, ID = 250µA

GS

V

= 30V, VGS = 0V

DS

VGS = ±10V, VDS = 0V

VDS = VGS, ID = 250µA

= 10V, ID = 4.0A

V

GS

= 4.5V, ID =3.5A

V

m

GS

= 3.0V, ID =3.0A

V

GS

= 2.5V, ID =2.8A

V

GS

VGS = 0V, IS = 1.25A

pF

= 15V, VGS = 0V

V

pF

pF

DS

f = 1.0MHz



VDS = VGS = 0V,f = 1.0MHz

nC

nC

nC

= 15V, ID = 4A

V

DS

nC

ns

ns

ns

= 15V, VGS = 10V,

V

DD

= 15, RG = 6

R

L

ns

A

W

W

April 2014

© Diodes Incorporated