Diodes DMN3051LDM User Manual

θ

Please click here to visit our online spice models database.

Features

• Low On-Resistance

• 38 mΩ @ V

• 64 mΩ @ V

• Low Input Capacitance

• Fast Switching Speed

• Lead Free By Design/RoHS Compliant (Note 2)

• "Green" Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

= 10V

GS

= 4.5V

GS

TOP VIEW

DMN3051LDM

N-CHANNEL ENHANCEMENT MODE MOSFET

Mechanical Data

• Case: SOT-26

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Marking Information: See Page 4

• Ordering Information: See Page 4

• Weight: 0.015 grams (approximate)

SOT-26

D

D

D

TOP VIEW

Internal Schematic

S

D

G

Maximum Ratings @T

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Pulsed Drain Current (Note 1)

= 25°C unless otherwise specified

A

Thermal Characteristics

Characteristic Symbol Value Units

Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range

Notes: 1. Device mounted on FR-4 PCB, minimum recommended pad layout on 2oz. Copper pads.

DMN3051LDM

Document number: DS31523 Rev. 3 - 2

2. No purposefully added lead.

3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

V

DSS

V

GSS

I

D

I

DM

PD

R

JA

TJ, T

STG

1 of 5

www.diodes.com

30 V

±20 V

4.0 A
16 A

900 mW
139 °C/W

-55 to +150 °C

November 2009

© Diodes Incorporated

)

g

g

R

C

U

R

RENT

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 4)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current

Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance

Diode Forward Voltage (Note 4)

V

GS(th

R

DS (ON)

|Y
V

fs

SD

| ⎯

⎯

DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance

C

iss

C

oss

C

rss

R

G

SWITCHING CHARACTERISTICS

Total Gate Charge
Gate-Source Charge

Gate-Drain Charge

Notes: 4. Short duration pulse test used to minimize self-heating effect.

Q

⎯

g

Q

s

Q

d

9.0

V = 10V

8.0

GS

7.0

V = 4.5V

GS

6.0

30

⎯ ⎯

⎯ ⎯

⎯

⎯

1.2

⎯

⎯

⎯

⎯

28
50

5.2

0.78 1.16 V

⎯
⎯
⎯

⎯

⎯

⎯

424
115

81

1.3

4.3

8.6

1.2

2.5

DMN3051LDM

V

VGS = 0V, ID = 250μA

800 nA

±80

±800

2.2 V
38

64

⎯

⎯
⎯
⎯
⎯ Ω

⎯

⎯

⎯

6

5

V = 5V

(A)

DS

4

VDS = 30V, VGS = 0V

= ±12V, VDS = 0V

V

nA

GS

V

= ±20V, VDS = 0V

GS

VDS = VGS, ID = 250μA

= 10V, ID = 6A

V

mΩ

GS

VGS = 4.5V, ID = 5A

S

VDS = 5V, ID = 3.1A
VGS = 0V, IS = 2A

pF
pF

= 5V, VGS = 0V, f = 1.0MHz

V

DS

pF

VGS = 0V VDS = 0V, f = 1MHz

= 10V, VGS = 4.5V, ID = 10A

V

DS

= 10V, VGS = 10V, ID = 10A

V

nC

DS

VDS = 10V, VGS = 10V, ID = 10A
VDS = 10V, VGS = 10V, ID = 10A

5.0

3

4.0

3.0

D

I , DRAIN CURRENT (A)

2.0

V = 3.0V

V = 2.5V

1.0
0

0 0.5 1 1.5 2 2.5 3

V , DRAIN-SOURCE VOLTAGE (V)

DS

GS

V = 1.8V

GS

GS

Fig. 1 Typical Output Characteri stics

AIN

D

I, D

2

1

T = 125°C

A

T = 85°C

A

T = 150°C

A

T = 25°C

A

T = -55°C

A

0

1.5 2.5 3.5
V , GATE SOURCE VOLT AGE (V)

GS

Fig. 2 Typical Transfer Characteristics

DMN3051LDM

Document number: DS31523 Rev. 3 - 2

2 of 5

www.diodes.com

November 2009

© Diodes Incorporated