Diodes DMN3051L User Manual

DMN3051L

N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

V

R

(BR)DSS

30V

38m @ V

64m @ VGS = -4.5V

DS(ON)

GS

= -10V

Description

This new generation MOSFET has been designed to minimize the

on-state resistance (R

performance, making it ideal for high efficiency power management

applications.

) and yet maintain superior switching

DS(ON)

Applications

NEW PRODUCT

 Load Switch

 DC-DC Converters

 Power Management Functions

Top View

I

D

TA = +25°C

5.8A

4.5A

Gate

Features and Benefits

 Low On-Resistance

 Low Gate Threshold Voltage

 Low Input Capacitance

 Fast Switching Speed

 Low Input/Output Leakage

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SOT23

 Case Material: Molded Plastic, “Green” Molding Compound.

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals: Finish – Matte Tin annealed over Copper

 Terminal Connections: See Diagram

 Weight: 0.008 grams (approximate)

SOT23

Drain

Source

Equivalent Circuit

UL Flammability Classification Rating 94V-0

leadframe. Solderable per MIL-STD-202, Method 208

D

G

Top View

S

Ordering Information (Note 4)

Part Number Case Packaging

DMN3051L-7 SOT23 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html

Marking Information

Date Code Key

Year 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017

Code U V W X Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

3N5

Chengdu A/T Site

YM

3N5

Shanghai A/T Site

DMN3051L

Document number: DS31347 Rev. 5 - 2

3N5 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)

YM

= Date Code Marking for CAT (Chengdu Assembly/ Test site)

YM

Y or = Year (ex: A = 2013)

Y

M = Month (ex: 9 = September)

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www.diodes.com

October 2013

© Diodes Incorporated

V

V

DMN3051L

Maximum Ratings (@T

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (Note 6) VGS = 10V

Pulsed Drain Current (10µs pulse, duty cycle = 1%)

Maximum Body Diode Forward Current (Note 6)

= +25°C, unless otherwise specified.)

A

Characteristic Symbol

V

DSS

V

GSS

= +25°C

Steady

State

t<5s

T

A

= +70°C

T

A

= +25°C

T

A

= +70°C

T

A

I

I

I

DM

I

alue Units

D

D

S

30 V

±20 V

4.5

3.5

5.8

4.9

A

A

20 A

2 A

Thermal Characteristics

NEW PRODUCT

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6)

Thermal Resistance, Junction to Case (Note 6)

Operating and Storage Temperature Range

Characteristic Symbol

= +25°C

T

A

TA = +70°C

Steady state

t < 5s 109

T

= +25°C

A

TA = +70°C

Steady state

t < 5s 56

P

R

P

R

R

T

J, TSTG

D

JA



D

JA



JC



Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage

30

BV

DSS

I

 

DSS

I

 

GSS

 

800 nA

80

800

V

nA

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transconductance

Source-Drain Diode Forward Voltage

V

R

DS(ON)

|Y

V

GS(th)

fs

SD

1.3 1.9 2.2 V




| 



33
54

5

0.78 1.16 V

38

64



m

S

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.

6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2 oz. Copper, single sided.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

DMN3051L

Document number: DS31347 Rev. 5 - 2

C



iss



C

oss

C



rss

R

Q

Q

Q

t

D(on)

t

t

D(off)

g

g

gs

gd

r

t

f

















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www.diodes.com

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115

81

1.51

9.0

1.3

1.3

3.4

6.2

13.9

2.8























pF

pF

pF



nC

nC

nC

ns

ns

ns

ns

alue Units

0.7

0.44
182

1.4

0.85

94

W

°C/W

W

°C/W

25

-55 to +150 °C

V

= 0V, ID = 250µA

GS

V

= 28V, VGS = 0V

DS

V

= ±12V, VDS = 0V

GS

V

= ±20V, VDS = 0V

GS

VDS = VGS, ID = 250 µA

V

= 10V, ID = 5.8A

GS

= 4.5V, ID = 5.0A

V

GS

VDS = 5V, ID = 3.1A

= 0V, IS = 2.0A

V

GS

= 5V, VGS = 0V

V

DS

f = 1.0MHz

VDS = 0V, VGS = 0V, f = 1MHz

V

= 10V, VDS = 15V, ID = 5.8A

GS

V

= 15V, VGS = 10V,

DD

= 2.6, RG = 3

R

L

October 2013

© Diodes Incorporated