Diodes DMN3033LSN User Manual

θ

q

Features

• Low Gate Charge

• Low R

• 30 mΩ @V

• 40 mΩ @V

• Low Input/Output Leakage

• Lead Free By Design/RoHS Compliant (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

• "Green" Device (Note 4)

DS(ON)

:

= 10V

GS

= 4.5V

GS

SC-59

Top View E

Drain

Gate

uivalent Circuit

DMN3033LSN

N-CHANNEL ENHANCEMENT MODE MOSFET

Mechanical Data

• Case: SC-59

• Case Material - Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish – Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Terminal Connections: See Diagram

• Marking Information: See Page 4

• Ordering Information: See Page 4

• Weight: 0.014 grams (approximate)

D

Source

G

Pin Configuration

S

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1) Continuous TA = 25°C
T

= 70°C

A

Pulsed Drain Current (Note 2)
Body-Diode Continuous Current (Note 1)

V

DSS

V

GSS

I

D

I

DM

I

S

30 V

±20

6
5

V
A

24 A

2.25 A

Thermal Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1) t ≤10s
Operating and Storage Temperature Range

Notes: 1. Device mounted on 1"x1", FR-4 PC board with 2 oz. Copper and test pulse width t ≤10s.

2. Repetitive Rating, pulse width limited by junction temperature.

3. No purposefully added lead.

4. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

P

D

R

JA

T

, T

J

STG

1.4 W
90

-55 to +150

°C /W

°C

DMN3033LSN

Document number: DS31116 Rev. 6 - 2

1 of 5

www.diodes.com

August 2011

© Diodes Incorporated

)

g

g

g

)

r

)

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

STATIC PARAMETERS

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C

T

= 55°C

J

Gate-Body Leakage Current
Gate Threshold Voltage

Static Drain-Source On-Resistance (Note 5)
Forward Transconductance (Note 5)

Diode Forward Voltage (Note 5)

DYNAMIC PARAMETERS (Note 6)

Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

Notes: 5. Test pulse width t = 300ms.

6. Guaranteed by design. Not subject to production testing.

BV

DSS

I

⎯ ⎯

DSS

I

⎯ ⎯

GSS

V

GS(th

R

DS (ON)

g

FS

V

SD

Q

⎯

Q

⎯

s

Q

⎯

d

t

⎯

D(on

t

⎯

t

⎯

D(off

t

⎯

f

C

⎯

iss

C

⎯

oss

C

⎯

rss

30

1.0

⎯
⎯

⎯

⎯ ⎯

1
5

±100

⎯

25
36

5

2.1 V
30

40
⎯

V
μA
nA

mΩ

S

0.7 1.1 V

10.5

3.8

2.9
11

7
63
30

755
136
108

⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯

nC
nC
nC

ns
ns
ns

ns
pF
pF
pF

20

DMN3033LSN

ID = 250μA, VGS = 0V
V

= 30V, VGS = 0V

DS

V

= 0V, VGS = ±20V

DS

V

= VGS, ID = 250μA

DS

= 10V, ID = 6A

V

GS

= 4.5V, ID = 5A

V

GS

V

= 10V, ID = 8A

DS

IS = 2.25A, V

VGS = 5V, V
VGS = 10V, V
VGS = 10V, V

= 15V, V

V

DD

R

= 1.8Ω, RG = 6Ω

D

= 10V, VGS = 0V

V

DS

f = 1.0MHz

= 0V

GS

= 15V, ID = 6A

DS

= 15V, ID = 6A

DS

= 15V, ID = 6A

DS

= 10V,

GS

18

V = 5V

DS

Pulsed

16
14
12
10

8
6

4
2

0

01234

DMN3033LSN

Document number: DS31116 Rev. 6 - 2

2 of 5

www.diodes.com

August 2011

© Diodes Incorporated