Diodes DMN3033LSD User Manual

4

8

5

Y

W

4

8

5

3033

Y

Product Summary

I

max

D

6.9A

5.8A

V

(BR)DSS

30V

R

20mΩ @ V

27mΩ @ VGS = 4.5V

DS(ON)

max

= 10V

GS

TA = +25°C

Description

This MOSFET has been designed to minimize the on-state resistance

) and yet maintain superior switching performance, making it

(R

DS(on)

ideal for high efficiency power management applications.

Applications

 Backlighting
 Power Management Functions
 DC-DC Converters

SO-8

Top View

S1

G1

S2

G2

Top View

Internal Schematic

D1

D1

D2

D2

DMN3033LSD

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features

 Dual N-Channel MOSFET
 Low On-Resistance
 Low Gate Threshold Voltage
 Low Input Capacitance
 Fast Switching Speed
 Low Input/Output Leakage

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SO-8
 Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020
 Terminals Connections: See Diagram
 Terminals: Finish - Matte Tin annealed over Copper lead frame.

Solderable per MIL-STD-202, Method 208

 Weight: 0.072grams (approximate)

D1

G1

S1

N-channel MOSFET

G2

N-channel MOSFET

D2

S2

Ordering Information (Note 4)

Part Number Case Packaging

DMN3033LSD-13 SO-8 2,500/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html

Marking Information

DMN3033LSD

Document number: DS31262 Rev. 9 - 2

N

LD

Y WW

1

Chengdu A/T Site

N3033LD

Y W

1

Shanghai A/T Site

= Manufacturer’s Marking
N3033LD = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)

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February 2014

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)

g

g

)

r

)

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Drain Current (Note 5) Steady
State

Pulsed Drain Current (Note 6)

Thermal Characteristics

Characteristic Symbol Value Unit

Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient

Operating and Storage Temperature Range

T

= +25°C

A

= +70°C

T

A

V
V

I

P

R

T

J, TSTG

DSS

GSS

I

D

DM

D

θJA

DMN3033LSD

30 V

20

6.9

5.8

V

A

30 A

2 W

62.5 °C/W

-55 to +150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current

Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

30

 

 

 

 

V

100 nA

100

nA

1 μA

V

= 0V, ID = 250μA

GS

V

= 30V, VGS = 0V

DS

= 20V, VDS = 0V

V

GS

VGS = 25V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transconductance
Diode Forward Voltage (Note 7)

V

GS(th

R

DS (ON)

g

V

fs

SD

1





0.5



13
22

7



2.1 V

20
27



1.2 V

V
V

mΩ

V

S

V
VGS = 0V, IS = 1A

= VGS, ID = 250μA

DS

= 10V, ID = 6.9A

GS

= 4.5V, ID = 5A

GS

=5V, ID = 6.9A

DS

DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance

C

iss

C

oss

C

rss

R







G

725
114

92

0.89







pF
pF
pF

Ω

= 15V, VGS = 0V

V

DS

f = 1MHz

VGS = 0V, VDS = 0V, f = 1MHz

SWITCHING CHARACTERISTICS

Total Gate Charge

Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time

t
Turn-On Rise Time
Turn-Off Delay Time

t
Turn-Off Fall Time

Notes: 5. Device mounted on 2 oz. Copper pads on FR-4 PCB with R

6. Pulse width 10μS, Duty Cycle 1%.

7. Short duration pulse test used to minimize self-heating effect.

Qg

Q
Q

d(on

t

d(off

t

s

d

f

θJA










= 62.5°C/W

6.4
13

1.9

3.2
11

7
63
30










VGS = 4.5V, VDS = 15V, ID =5A

nC

nC
nC

VGS = 10V, V
VGS = 4.5V, V
VGS = 4.5V, V

DS

DS

DS

ns
ns

VDD = 15V, V

ns

RD = 1.8Ω, RG = 6Ω

GS

ns

= 15V, ID = 6.9A

= 15V, ID = 6.9A
= 15V, ID = 6.9A

= 10V,

DMN3033LSD

Document number: DS31262 Rev. 9 - 2

2 of 6

www.diodes.com

February 2014

© Diodes Incorporated