Diodes DMN3033LDM User Manual

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Features

• Low Gate Charge

• Low R

• 33 mΩ @V

• 40 mΩ @V

• Low Input/Output Leakage

• Lead Free By Design/RoHS Compliant (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

• "Green" Device (Note 4)

DS(ON)

:

= 10V

GS

= 4.5V

GS

TOP VIEW

DMN3033LDM

N-CHANNEL ENHANCEMENT MODE MOSFET

Mechanical Data

• Case: SOT-26

• Case Material - Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020D

• Terminals: Finish – Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Terminal Connections: See Diagram

• Marking Information: See Page 4

• Ordering Information: See Page 4

• Weight: 0.008 grams (approximate)

SOT-26

D

D

D

E

uivalent Circuit

S

D

G

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1) Continuous TA = 25°C
T
Pulsed Drain Current (Note 2)
Body-Diode Continuous Current (Note 1)

Thermal Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1) t ≤10s
Operating and Storage Temperature Range

Notes: 1. Device mounted on 1"x1", FR-4 PC board with 2 oz. Copper and test pulse width t ≤10s.

2. Repetitive Rating, pulse width limited by junction temperature.

3. No purposefully added lead.

4. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

DMN3033LDM

Document number: DS31345 Rev. 4 - 2

= 70°C

A

www.diodes.com

1 of 5

V

DSS

V

GSS

I

D

I

DM

I

S

P

D

R

JA

, T

T

J

STG

30 V

±20

6.9

5.8

V
A

20 A

2.25 A

2 W

62.5

-55 to +150

°C /W

°C

July 2009

© Diodes Incorporated

)

g

g

)

r

)

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

STATIC CHARACTERISTICS

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C
T

= 55°C

J

Gate-Body Leakage Current
Gate Threshold Voltage

Static Drain-Source On-Resistance (Note 5)
Forward Transconductance (Note 5)

Diode Forward Voltage (Note 5)

DYNAMIC CHARACTERISTICS (Note 6)

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resisitance
SWITCHING CHARACTERISTICS

Total Gate Charge
Gate-Source Charge

Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 5. Test pulse width t = 300ms.

6. Guaranteed by design. Not subject to production testing.

BV

DSS

I

⎯ ⎯

DSS

I

⎯ ⎯

GSS

V

GS(th

R

DS (ON)

g

⎯

FS

V

SD

C

⎯

iss

C

⎯

oss

C

rss

R

G

Q

⎯

g

Q

⎯

s

Q

⎯

d

t

⎯

D(on

t

⎯

t

D(off

t

f

30

1.0

⎯

⎯

⎯
⎯

⎯
⎯

⎯ ⎯

1
5

±100

⎯

25
36

5

2.1 V
33

40
⎯

V
μA
nA

mΩ

S

0.7 1.1 V

755
136
108

0.89

6.4

13.0

1.9

3.2
11

7
63
30

⎯
⎯
⎯
⎯ Ω

⎯
⎯

⎯
⎯
⎯
⎯
⎯

pF
pF
pF

nC
nC

nC

ns
ns
ns
ns

20

DMN3033LDM

ID = 250μA, VGS = 0V
V

= 30V, VGS = 0V

DS

V

= 0V, VGS = ±20V

DS

V

= VGS, ID = 250μA

DS

V

= 10V, ID = 6.9A

GS

V

= 4.5V, ID = 5.0A

GS

V

= 10V, ID = 8A

DS

IS = 2.25A, V

= 10V, VGS = 0V

V

DS

f = 1.0MHz
VGS = 0V, V

= 4.5V, V

V

GS

= 10V, V

V

GS

VGS = 10V, V
VGS = 10V, V

= 15V, V

V

DD

= 1.8Ω, RG = 6Ω

R

D

= 0V

GS

= 0V, f = 1MHz

DS

= 15V, ID = 5A

DS

= 15V, ID = 6.9A

DS

= 15V, ID = 6.9A

DS

= 15V, ID = 6.9A

DS

= 10V,

GS

18

V = 5V

DS

Pulsed

16
14
12
10

8
6

4
2

0

01234

DMN3033LDM

Document number: DS31345 Rev. 4 - 2

2 of 5

www.diodes.com

July 2009

© Diodes Incorporated