Diodes DMN3032LE User Manual
YWW
NEW PRODUCT
Product Summary
I
V
R
(BR)DSS
30V
29mΩ @ V
35mΩ @ VGS = 4.5V
DS(on) max
GS
= 10V
D
TA = +25°C
5.6A
4.8A
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
performance, making it ideal for high efficiency power management
applications.
) and yet maintain superior switching
DS(ON)
Applications
• DC Motor Control
• DC-AC Inverters
SOT223
Top View
Pin Out - Top View
DMN3032LE
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT223
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0 (Note 1)
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals Connections: See diagram below
• Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
• Weight: 0.112 grams (approximate)
D
G
S
Equivalent Circuit
Ordering Information (Note 4)
Part Number Qualification Case Packaging
DMN3032LE-13 Standard SOT223 2,500 / Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
N3032L
DMN3032LE
Document number: DS36695 Rev. 2 - 2
N3032L
YWW
= Manufacturer’s Marking
N3032L = Marking Code
YWW = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YWW = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y= Year (ex: 3 = 2013)
WW = Week (01 - 53)
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May 2014
© Diodes Incorporated
NEW PRODUCT
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = 10V
Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
= +25°C
T
A
= +70°C
T
A
TC = +25°C
= +70°C
T
C
V
DSS
V
GSS
I
D
I
D
I
S
I
DM
Thermal Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
T
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
A = +25°C
TA = +70°C 1.1
P
R
P
R
T
J, TSTG
D
JA
θ
D
JC
θ
-55 to +150 °C
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV
I
DSS
I
GSS
DSS
30
— —
— —
—
— V
1 µA
±100 nA
VGS = 0V, ID = 250µA
VDS = 30V, VGS = 0V
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V
GS(th)
R
DS (ON)
|Y
V
SD
|
fs
1 — 2 V
—
—
—
—
22 29
27 35
7 — S
0.7 1.5 V
VDS = VGS, ID = 250µA
V
mΩ
V
VDS = 5V, ID = 5.8A
VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistnace
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
6 .Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
C
C
C
R
Q
Q
Q
t
D(on)
t
D(off)
iss
oss
rss
gd
t
t
g
g
gs
r
f
— 498 —
— 52 —
— 45 —
— 2.2 —
— 11.3 —
— 1.4 —
— 2.1 —
— 2.3 —
— 3.9 —
— 10 —
— 1.9 —
pF
Ω
nC
ns
V
f = 1MHz
VDS = 0V, V
V
V
R
DMN3032LE
Document number: DS36695 Rev. 2 - 2
2 of 6
www.diodes.com
DMN3032LE
30 V
±20
5.6
4.1
15.4
12.1
1.5 A
25 A
1.8
69 °C/W
14 W
8.7 °C/W
= 10V, ID = 3.2A
GS
= 4.5V, ID = 2.8A
GS
= 15V, VGS = 0V
DS
= 0V, f = 1MHz
GS
= 15V, VGS = 10V, ID = 5.8A
DS
= 15V, V
DS
= 2.6Ω, RG = 3Ω
L
GS
V
A
A
W
= 10V,
May 2014
© Diodes Incorporated
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