Diodes DMN3030LSS User Manual

Product Summary

I

max

D

V

(BR)DSS

30V

R

18mΩ @ V

30mΩ @ VGS = 4.5V

DS(ON)

max

= 10V

GS

TA = +25°C

9.0A

7.0A

Description and Applications

This MOSFET has been designed to minimize the on-state resistance

) and yet maintain superior switching performance, making it

(R

DS(on)

ideal for high efficiency power management applications.

 Backlighting
 Power Management Functions
 DC-DC Converters


SO-8

Top View

S

S

G

Internal Schematic

DMN3030LSS

SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

 Low On-Resistance
 Low Gate Threshold Voltage
 Low Input Capacitance
 Fast Switching Speed
 Low Input/Output Leakage

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SO-8
 Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020
 Terminals Connections: See Diagram
 Terminals: Finish - Matte Tin annealed over Copper lead frame.

Solderable per MIL-STD-202, Method 208

 Weight: 0.074 grams (approximate)

D

DS

D

D

D

Top View

G

S

Equivalent circuit

Ordering Information (Note 4)

Part Number Case Packaging

DMN3030LSS-13 SO-8 2500/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

DMN3030LSS

Document number: DS31261 Rev. 12 - 2

8 5

N3030LS

WW

YY

1 4

Chengdu A/T Site Shanghai A/T Site

8 5

N3030LS

YY

WW

1 4

= Manufacturer’s Marking
N3030LS = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)

1 of 6

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October 2013

© Diodes Incorporated



)

g

g

)

r

)

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Drain Current (Note 5) Steady
State

Pulsed Drain Current (Note 6)

Thermal Characteristics

Characteristic Symbol Value Unit

Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range

= +25°C

T

A

T

= +70°C

A

V
V

I

P

R

T

J, TSTG

DSS

GSS

I

D

DM

D

JA

DMN3030LSS

30 V

25

9.0

6.75

V

A

40 A

2.5 W
50 °C/W

-55 to +150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current

Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

30

 

 







1 μA

100

1

V

nA
μA

V

= 0V, ID = 250μA

GS

V

= 30V, VGS = 0V

DS

= 20V, VDS = 0V

V

GS

V

= 25V, VDS = 0V

GS

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transconductance
Diode Forward Voltage

V

GS(th

R

DS (ON)

g



fs

V

SD



1



15.7

26.4

5.8

2.1 V

18
30



mΩ

S

0.5 0.7 1.2 V

V

= VGS, ID = 250μA

DS

= 10V, ID = 9A

V

GS

V

= 4.5V, ID = 7A

GS

V

= 10V, ID = 9A

DS

VGS = 0V, IS = 2.1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance

C



iss

C



oss

C



rss

R

G

0.30 0.88 2.5 Ω

741
124

95





pF
pF
pF

= 15V, VGS = 0V

V

DS

f = 1.0MHz

VDS = 0V, VGS = 0V, f = 1.0MHz
SWITCHING CHARACTERISTICS (Note 8)

Total Gate Charge

Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time

Notes: 5. Device mounted on 2 oz copper pad layout with R

6. Pulse width 10μS, Duty Cycle 1%.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

t

t

Q

Q
Q

d(on

d(off

JA

g

s

d

t

t

f

= 50°C/W.















7.6 12

16.7 25

1.9

5.2

4.0

4.4

23.0

9.4













V

= 15V, VGS = 4.5V, ID = 9A

DS

nC

VDS = 15V, VGS = 10V, I

V

= 10V, VDS = 15V,

ns

GS

= 15Ω, RG = 6Ω

R

L

= 9A

D

DMN3030LSS

Document number: DS31261 Rev. 12 - 2

2 of 6

www.diodes.com

October 2013

© Diodes Incorporated