Diodes DMN3030LFG User Manual

Product Summary

V

R

(BR)DSS

30V

18m @ V

27m @ VGS = 4.5V 5.5A

Package

DS(ON)

= 10V

GS

POWERDI

3333-8

Description

This new generation MOSFET has been designed to minimize the on-

state resistance (R

performance, making it ideal for high efficiency power management

applications.

) and yet maintain superior switching

DS(on)

Applications

 Backlighting

NEW PRODUCT

 DC-DC Converters

 Power Management Functions

POWERDI3333-8

Top View

I

D

TA = +25°C

8.6A

D

D



Green

D

D

Bottom View

DMN3030LFG

N-CHANNEL ENHANCEMENT MODE MOSFET

POWERDI

Features

 Low R

 Small form factor thermally efficient package enables higher

density end products

 Occupies just 33% of the board area occupied by SO-8 enabling

smaller end product

 Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

– ensures on state losses are minimized

DS(ON)

Mechanical Data

 Case: POWERDI3333-8

 Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals: Finish  Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

 Weight: 0.072 grams (approximate)

Pin 1

S

S

S

G

1

2

3

4

Top View

Internal Schematic

e3

8

7

6

5

®

Ordering Information (Note 4)

Part Number Case Packaging

DMN3030LFG-7 POWERDI3333-8 2000 / Tape & Reel

DMN3030LFG-13 POWERDI3333-8 3000 / Tape & Reel

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.

Marking Information

YYWW

N30

N30 = Product marking code
YYWW = Date code marking
YY = Last digit of year (ex: 10 for 2010)
WW = Week code (01 – 53)

DMN3030LFG

Document number: DS35499 Rev. 5 - 2

POWERDI is a registered trademark of Diodes Incorporated.

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www.diodes.com

March 2013

© Diodes Incorporated



)

g

g

)

)

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = 10V

Continuous Drain Current (Note 6) VGS = 10V

Pulsed Drain Current (10s pulse, duty cycle = 1%)
Maximum Body Diode continuous Current

Thermal Characteristics

NEW PRODUCT

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6)

Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range

DMN3030LFG

V

DSS

V

GSS

T

Steady

State

t<10s

Steady

State

t<10s

= +25°C

A

= +70°C

T

A

T

= +25°C

A

T

= +70°C

A

= +25°C

T

A

T

= +70°C

A

= +25°C

T

A

= +70°C

T

A

I

D

I

D

I

D

I

D

I

DM

I

S

Characteristic Symbol Value Units

= +25°C

T

A

TA = +70°C

Steady state

t<10s 89

= +25°C

T

A

TA = +70°C

Steady state

t<10s 34

P

R

P

R

R

T

J, TSTG

D

JA



D

JA



JC

30 V

±25 V

5.3

4.2

6.8

5.2

8.6

6.8

11

8.8

A

A

A

A

70 A

3 A

0.9

0.5

148

2.3

1.4

W

°C/W

W

56

°C/W

6.9

-55 to +150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage BV
Zero Gate Voltage Drain Current TJ = +25°C I

Gate-Source Leakage I

30 — — V VGS = 0V, ID = 250µA

DSS

—— 100 nA VDS = 30V, VGS = 0V

DSS

GSS

— — ±1 µA V
— — 100 nA VGS = ±20V, VDS = 0V

= ±25V, VDS = 0V

GS

ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage V

Static Drain-Source On-Resistance R

0.8 1.2 2.1 V VDS = VGS, ID = 250A

GS(th

DS (ON)

— 10 18
— 16 27 VGS = 4.5V, ID = 7.5A

m

V

= 10V, ID = 10A

GS

Forward Transfer Admittance |Yfs| — 6 — S VDS = 5V, ID = 10A
Diode Forward Voltage VSD —0.7 1.0 V VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

—751 —

iss

—121 —

oss

—110 —

rss

pF

= 10V, VGS = 0V,

V

DS

f = 1.0MHz

Gate Resistance Rg —1.5 —  VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge VGS = 4.5V Qg —9 —
Total Gate Charge VGS = 10V Qg —17.4 —
Gate-Source Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t

—2.2 —

s

— 3 —

d

—2.5 —

D(on

Turn-On Rise Time tr —6.6 —
Turn-Off Delay Time t

—19.0 —

D(off

VGS = 4.5V, VDS = 15V, ID =6A

nC

ns

= 10V, VDS = 15V,

V

GS

= 6A

I

D

= 15V, VGS = 10V,

V

DD

= 6, RL = 1.8, ID = 6.7A

R

G

Turn-Off Fall Time tf —6.3 —

Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.

DMN3030LFG

Document number: DS35499 Rev. 5 - 2

POWERDI is a registered trademark of Diodes Incorporated.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

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March 2013

© Diodes Incorporated