Diodes DMN3030LFG User Manual

Product Summary

V

R

(BR)DSS

30V

18m @ V

27m @ VGS = 4.5V 5.5A

Package

DS(ON)

= 10V

GS

POWERDI

3333-8

Description

This new generation MOSFET has been designed to minimize the on-

state resistance (R

performance, making it ideal for high efficiency power management

applications.

) and yet maintain superior switching

DS(on)

Applications

 Backlighting

NEW PRODUCT

 DC-DC Converters

 Power Management Functions

POWERDI3333-8

Top View

I

D

TA = +25°C

8.6A

D

D



Green

D

D

Bottom View

DMN3030LFG

N-CHANNEL ENHANCEMENT MODE MOSFET

POWERDI

Features

 Low R

 Small form factor thermally efficient package enables higher

density end products

 Occupies just 33% of the board area occupied by SO-8 enabling

smaller end product

 Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

– ensures on state losses are minimized

DS(ON)

Mechanical Data

 Case: POWERDI3333-8

 Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals: Finish  Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

 Weight: 0.072 grams (approximate)

Pin 1

S

S

S

G

1

2

3

4

Top View

Internal Schematic

e3

8

7

6

5

®

Ordering Information (Note 4)

Part Number Case Packaging

DMN3030LFG-7 POWERDI3333-8 2000 / Tape & Reel

DMN3030LFG-13 POWERDI3333-8 3000 / Tape & Reel

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.

Marking Information

YYWW

N30

N30 = Product marking code
YYWW = Date code marking
YY = Last digit of year (ex: 10 for 2010)
WW = Week code (01 – 53)

DMN3030LFG

Document number: DS35499 Rev. 5 - 2

POWERDI is a registered trademark of Diodes Incorporated.

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

)

g

g

)

)

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = 10V

Continuous Drain Current (Note 6) VGS = 10V

Pulsed Drain Current (10s pulse, duty cycle = 1%)
Maximum Body Diode continuous Current

Thermal Characteristics

NEW PRODUCT

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6)

Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range

DMN3030LFG

V

DSS

V

GSS

T

Steady

State

t<10s

Steady

State

t<10s

= +25°C

A

= +70°C

T

A

T

= +25°C

A

T

= +70°C

A

= +25°C

T

A

T

= +70°C

A

= +25°C

T

A

= +70°C

T

A

I

D

I

D

I

D

I

D

I

DM

I

S

Characteristic Symbol Value Units

= +25°C

T

A

TA = +70°C

Steady state

t<10s 89

= +25°C

T

A

TA = +70°C

Steady state

t<10s 34

P

R

P

R

R

T

J, TSTG

D

JA



D

JA



JC

30 V

±25 V

5.3

4.2

6.8

5.2

8.6

6.8

11

8.8

A

A

A

A

70 A

3 A

0.9

0.5

148

2.3

1.4

W

°C/W

W

56

°C/W

6.9

-55 to +150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage BV
Zero Gate Voltage Drain Current TJ = +25°C I

Gate-Source Leakage I

30 — — V VGS = 0V, ID = 250µA

DSS

—— 100 nA VDS = 30V, VGS = 0V

DSS

GSS

— — ±1 µA V
— — 100 nA VGS = ±20V, VDS = 0V

= ±25V, VDS = 0V

GS

ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage V

Static Drain-Source On-Resistance R

0.8 1.2 2.1 V VDS = VGS, ID = 250A

GS(th

DS (ON)

— 10 18
— 16 27 VGS = 4.5V, ID = 7.5A

m

V

= 10V, ID = 10A

GS

Forward Transfer Admittance |Yfs| — 6 — S VDS = 5V, ID = 10A
Diode Forward Voltage VSD —0.7 1.0 V VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

—751 —

iss

—121 —

oss

—110 —

rss

pF

= 10V, VGS = 0V,

V

DS

f = 1.0MHz

Gate Resistance Rg —1.5 —  VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge VGS = 4.5V Qg —9 —
Total Gate Charge VGS = 10V Qg —17.4 —
Gate-Source Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t

—2.2 —

s

— 3 —

d

—2.5 —

D(on

Turn-On Rise Time tr —6.6 —
Turn-Off Delay Time t

—19.0 —

D(off

VGS = 4.5V, VDS = 15V, ID =6A

nC

ns

= 10V, VDS = 15V,

V

GS

= 6A

I

D

= 15V, VGS = 10V,

V

DD

= 6, RL = 1.8, ID = 6.7A

R

G

Turn-Off Fall Time tf —6.3 —

Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.

DMN3030LFG

Document number: DS35499 Rev. 5 - 2

POWERDI is a registered trademark of Diodes Incorporated.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

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RAIN CUR

REN

T

R

CUR

RENT

R

R

OUR

CE ON-R

TANC

R

R

OUR

ON-R

R

R

OUR

C

R

R

OUR

CE ON-R

C

DMN3030LFG

30

V = 5.0VDS

25

(A)

20

15

T = 150°C

AIN

D

I, D

10

A

T = 125°C

A

5

T = -55°C

0

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

V , GATE-SOURCE VOLTAGE (V)

GS

Fig. 2 Typical Transfer Characteristics

0.040



0.035

V = 4.5VGS

0.030

ESISTANCE ( )

0.025

0.020

CE

0.015

AIN-S

0.010

, D

T = 85°C

A

T = 25°C

A

A

T = 150°C

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

NEW PRODUCT

30

25

(A)

20

15

10

D

I, D

5

0

0 0.5 1.0 1.5 2.0

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig.1 Typical Output Characteristic

0.020



E ( )

0.016

V = 4.5VGS

ESIS

0.012

V = 10VGS

0.008

AIN-S

0.004

, D

0.005

DS(ON)

0

0 5 10 15 20 25 30

I , DRAIN-SOURCE CURRENT (A)D

Fig. 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

1.6

V=V

10

GS

I= 10A

D



E ( )

DS(ON)

0

0 5 10 15 20 25 30

I , DRAIN CURRENT (A)

D

Fig. 4 Typical On-Resistance vs.

Drain Current and Temperature

0.040

0.035

1.4

ESISTAN

AIN-S

, D

0.030

0.025

0.020

0.015

0.010

V = 4.5V

GS

I= 5A

D

V=V

10

GS

I= 10A

D

E

AIN-S

, D

V = 4.5V

GS

I= 5A

1.2

D

1.0

DS(ON)

0.8

ON-RESISTANCE (NORMALIZED)

0.005

DS(ON)

0.6

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)

J



Fig. 5 On-Resistance Variation with Temperature

0

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)

J



Fig. 6 On-Resistance Variation with Temperature

DMN3030LFG

Document number: DS35499 Rev. 5 - 2

POWERDI is a registered trademark of Diodes Incorporated.

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GATE THRESH

O

O

TAG

OUR

CE CUR

RENT

C

UNC

TIO

N CAPACITAN

C

F

GATE THRESH

O

OLTAG

P

P

T

R

N

N

T

P

O

R

RAIN CUR

REN

T

NEW PRODUCT

DMN3030LFG

2.0

30

1.8

E (V)

1.6

L

1.4

1.2

LD V

I = 250µA

D

I= 1mA

D

1.0

25

(A)

20

T= 25°C

15

A

0.8

0.6

0.4

GS(th)

0.2

V,

0

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)

J



Fig. 7 Gate Threshold Variation vs. Ambient Temperature

10,000

10

S

I, S

5

0

0 0.2 0.4 0.6 0.8 1.0 1.2

V , SOURCE-DRAIN VOLTAGE (V)

SD

Fig. 8 Diode Forward Voltage vs. Current

10

)

E (V)

8

E (p

V= 15V

DS

I=A

6

D

1,000

C

iss

C

100

, J

T

f = 1MHz

10

0 5 10 15 20 25 30

V , DRAIN-SOURCE VOLTAGE (V)

DS

oss

C

rss

Fig. 9 Typical Junction Capacitance

400

350

(W)

300

IWE

250

200

SIE

Single Pulse
R = 148C/W



JA

R = r * R



JA(t) ( t) JA

T - T = P * R

JA JA(t)

A

150

EAK

100

,

(PK)

50

0

0.001 0.01 0.1 1 10 100 1,0001E-041E-05

t1, PULSE DURATION TIME (sec)

Fig. 11 Single Pulse Maximum Power Dissipation





6

LD V

4

2

,

GS

V

0

0 2 4 6 8 101214161820

, TOTAL GATE CHARGE

Q (nC)

g

Fig. 10 Gate Charge

100

R

DS(on)

Limited

P = 10sWµ

10

(A)

DC

1

P = 10s

W

P = 1s

W

P = 100ms

W

P = 10ms

W

P = 1ms

D

I, D

0.1

T = 150°C

J(max)

T = 25°C

A

V = 10V

GS

Single Pulse
DUT on 1 * MRP Board

0.01

0.1 1 10 100
V , DRAIN-SOURCE VOLTAGE (V)

DS

W

P = 100µs

W

Fig. 12 SOA, Safe Operation Area

DMN3030LFG

Document number: DS35499 Rev. 5 - 2

POWERDI is a registered trademark of Diodes Incorporated.

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T

R

T T

H

R

R

TANC

C

NEW PRODUCT

1

D = 0.9
D = 0.7

E

D = 0.5

D = 0.3

ESIS

0.1

D = 0.1

MAL
E

0.01

ANSIEN

r(t),

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
t1, PULSE DURATION TIME (sec)

Fig. 13 Transient Thermal Resistance

R (t) = r(t) * R



JA JA

R = 148°C/W



JA

Duty Cycle, D = t1/ t2

DMN3030LFG

Package Outline Dimensions

A

Pin 1 ID

E

E2

14

85

D2

D

A3

A1

(4x)

L

b2

(4x)

b (8x)eZ (4x)

L1

(3x)

POWERDI®3333-8

Dim Min Max Typ

D 3.25 3.35 3.30

E 3.25 3.35 3.30
D2 2.22 2.32 2.27
E2 1.56 1.66 1.61

A 0.75 0.85 0.80
A1 0 0.05 0.02
A3   0.203

b 0.27 0.37 0.32
b2   0.20

L 0.35 0.45 0.40
L1   0.39

e   0.65

Z   0.515

All Dimensions in mm

Suggested Pad Layout

Y2

Y3

X

G

85

G1

14

X2

Y1

Y

Dimensions Value (in mm)

C 0.650

G 0.230

G1 0.420

Y 3.700
Y1 2.250
Y2 1.850
Y3 0.700

X 2.370
X2 0.420

DMN3030LFG

Document number: DS35499 Rev. 5 - 2

POWERDI is a registered trademark of Diodes Incorporated.

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DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.

NEW PRODUCT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2013, Diodes Incorporated

www.diodes.com

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

IMPORTANT NOTICE

LIFE SUPPORT

DMN3030LFG

DMN3030LFG

Document number: DS35499 Rev. 5 - 2

POWERDI is a registered trademark of Diodes Incorporated.

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