Diodes DMN3029LFG User Manual

NEW PRODUCT
Product Summary
V
R
(BR)DSS
18.6m @ V
30V
26.5m @ VGS = 4.5V
DS(ON)
= 10V
GS
Description
This new generation MOSFET has been designed to minimize the on­state resistance (R performance, making it ideal for high efficiency power management applications.
) and yet maintain superior switching
DS(on)
Applications
Backlighting
DC-DC Converters
Power management functions
ADVANCE INFORMATION
Top View
POWERDI3333-8
I
D
TA = 25°C
8.0A
6.5A
D
D
D
Green
D
Bottom View
N-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI
Features
Low R
Small form factor thermally efficient package enables higher
density end products
Occupies just 33% of the board area occupied by SO-8 enabling smaller end product
100% UIS (Avalanche) rated
100% Rg tested
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
– ensures on state losses are minimized
DS(ON)
Mechanical Data
Case: POWERDI3333-8
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Terminals: Finish Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.072 grams (approximate)
Pin 1
S
S
S
G
1 2 3 4
Top View
Internal Schematic
8 7 6 5
®
Ordering Information (Note 4)
Part Number Case Packaging
DMN3029LFG-7 POWERDI3333-8 2000 / Tape & Reel
DMN3029LFG-13 POWERDI3333-8 3000 / Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
POWERDI is a registered trademark of Diodes Incorporated.
DMN3029LFG
Document number: DS35448 Rev. 7 - 2
N39 = Product marking code YYWW = Date code marking YY = Last digit of year (ex: 10 for 2010) WW = Week code (01 – 53)
1 of 7
www.diodes.com
October 2012
© Diodes Incorporated
R
CUR
R
T
P
P
T
R
N
N
T
P
O
R
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
NEW PRODUCT
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = 10V
Continuous Drain Current (Note 6) VGS = 10V
Continuous Drain Current (Note 6) VGS = 10V
Continuous Drain Current (Note 6) VGS = 4.5V
Continuous Drain Current (Note 6) VGS = 4.5V Pulsed Drain Current (Note 7)
Avalanche Current (Notes 7 & 8) Repetitive Avalanche Energy (Notes 7 & 8) L = 0.1mH
Steady
State
Steady
State t10s Steady
State t10s
T
= +25°C
A
= +70°C
T
A
T
= +25°C
A
T
= +70°C
A
T
= +25°C
A
= +70°C
T
A
T
= +25°C
A
T
= +70°C
A
T
= +25°C
A
= +70°C
T
A
V V
I I
E
DSS GSS
I
D
I
D
I
D
I
D
I
D
DM AR
AR
30 V
±25 V
5.3
4.2
8.0
6.3
9.5
7.7
6.5
4.9
7.8
6.2
A
A
A
A
A
70 A 18 A 16 mJ
Thermal Characteristics
ADVANCE INFORMATION
Characteristic Symbol Max Unit
Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5) R Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6) R Power Dissipation (Note 6) t ≤ 10s Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6) t10s R Operating and Storage Temperature Range
Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
6. Device mounted on 2” x 2” FR-4 PCB with high coverage 2 oz. Copper, single sided.
7. Repetitive rating, pulse width limited by junction temperature.
8. I
and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C.
AR
P
D
JA
P
D
JA
P
D
JA
, T
T
J
STG
100
R
DS(on)
Limited
P = 10sWµ
400
350
(W)
10
(A) EN
1
AIN
D
0.1
I, D
0.01
0.1 1 10
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
T = 150°C
J(max)
T = 25°C
A
Single Pulse
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 1 SOA, Safe Operation Area
W
100
300
IWE
250
200
SIE A
150
EAK
100
,
(PK)
50
0
0.001 0.01 0.1 1 10 100 1,0000.0001 t1, PULSE DURATION TIME (sec)
Fig. 2 Single Pulse Maximum Power Dissipation
POWERDI is a registered trademark of Diodes Incorporated.
DMN3029LFG
Document number: DS35448 Rev. 7 - 2
2 of 7
www.diodes.com
1.0 W
130.6 °C/W
2.07 W
62.5 °C/W
3.0 W
43.8 °C/W
-55 to +150 °C
Single Pulse
°
R = 60C/W
θ
JA
R = r * R
θθ
JA(t) (t) JA
T - T = P * R
JA JA(t)
θ
October 2012
© Diodes Incorporated
NEW PRODUCT
T
R
T T
HER
R
T
C
)
g
g
g
)
r
)
ADVANCE INFORMATION
1
E
D = 0.7
D = 0.5
AN
D = 0.3
ESIS
0.1
D = 0.1
MAL
D = 0.05
D = 0.02
0.01
D = 0.01
ANSIEN
D = 0.005
r(t),
Single Puls e
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, PULSE DURATION TIMES (sec)
D = 0.9
R (t)=r(t) * R
θ
JA
R = 60°C/W
JA
Duty Cycle, D = t1/ t2
θθJA
Fig. 3 Transient Thermal Resistance
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C I Gate-Source Leakage
BV
I
DSS DSS GSS
30 - - V
- - 0.1
- - ±100 nA
VGS = 0V, ID = 250μA
μA
VDS = 30V, VGS = 0V
VGS = ±25V, VDS = 0V ON CHARACTERISTICS (Note 9) Gate Threshold Voltage
Static Drain-Source On-Resistance Forward Transfer Admittance
Diode Forward Voltage
V
GS(th
R
DS (ON)
|Y V
fs
SD
0.9 1.2 1.8 V
- 13,5 18.6
- 22 26.5
|
- 13.0 - S
- 0.7 1.0 V
VDS = VGS, ID = 250A
= 10V, ID = 10A
V
mΩ
GS
V
= 4.5V, ID = 7.5A
GS
VDS = 5V, ID = 10A
VGS = 0V, IS = 1A DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
C
C
oss
C
rss
R Total Gate Charge VGS = 4.5V Qg Total Gate Charge VGS = 10V Qg Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time
Notes: 9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to prod uction testing.
Q Q
t
D(on
t
D(off
t
t
iss
s d
f
- 580 -
- 110 -
- 70 -
- 2.0 3.0
- 5.3 -
- 11.3 -
- 1.9 -
- 1.9 -
- 4.4 - ns
- 4.6 - ns
- 19.5 - ns
- 5.8 - ns
= 15V, VGS = 0V,
V
pF
Ω
DS
f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz
VGS = 4.5V, VDS = 15V, ID = 10A
nC
V
= 10V, VDS = 15V,
GS
I
= 10A
D
V
= 10V, VDS = 15V,
GS
= 15, RG = 6
R
L
POWERDI is a registered trademark of Diodes Incorporated.
DMN3029LFG
Document number: DS35448 Rev. 7 - 2
3 of 7
www.diodes.com
October 2012
© Diodes Incorporated
Loading...
+ 4 hidden pages