Diodes DMN3026LVT User Manual

Y

Y

Product Summary

V

R

(BR)DSS

30V

23mΩ @ V

30mΩ @ VGS = 4.5V

DS(on) max

GS

= 10V

Description

This new generation MOSFET has been designed to minimize the on-

state resistance (R

performance, making it ideal for high efficiency power management

applications.

) and yet maintain superior switching

DS(ON)

Applications

 DC-DC Converters

 Power management functions

ADVANCE INFORMATION

 Backlighting

ADVANCED INFORMATION

TSOT26

Top View Top View

I

D

TA = +25°C

6.6A

5.8A

D

1

D

2

3

G

Pin Configuration

DMN3026LVT

30V N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

 Low Input Capacitance

 Low On-Resistance

 Fast Switching Speed

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: TSOT26

 Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminal Connections: See Diagram

 Terminals: Finish – Tin Finish annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

 Weight: 0.013 grams (approximate)

D

6

D

5

4

S

Equivalent Circuit

e3

Ordering Information (Note 4)

Part Number Case Packaging

DMN3026LVT-7 TSOT26 3,000/Tape & Reel

DMN3026LVT-13 TSOT26 10,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

N5L

M

N5L

Date Code Key

Year 2010 2011 2012 2013 2014 2015 2016

Code X Y Z A B C D

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

Shanghai A/T Site

Chengdu A/T Site

N5L = Product Type Marking Code

M

YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)

DMN3026LVT

Document number: DS36813 Rev. 3 - 2

1 of 6

www.diodes.com

April 2014

© Diodes Incorporated

V

V

DMN3026LVT

Maximum Ratings (@T

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (Note 6) VGS = 10V

Maximum Body Diode Forward Current (Note 6)

Pulsed Drain Current (10s pulse, duty cycle = 1%)

= +25°C, unless otherwise specified.)

A

Characteristic Symbol

V

DSS

V

GSS

= +25°C

Steady

State

t<10s

T

A

= +70°C

T

A

= +25°C

T

A

= +70°C

T

A

I

I

I

I

DM

alue Units

D

D

S

30 V

±20 V

6.6

5.3

8.5

6.8

A

A

3.0 A

35 A

Thermal Characteristics (@T

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

ADVANCE INFORMATION

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6)

ADVANCED INFORMATION

Thermal Resistance, Junction to Case (Note 6)

Operating and Storage Temperature Range

= +25°C, unless otherwise specified.)

A

Characteristic Symbol

= +25°C

T

A

TA = +70°C

Steady state

t<10s 60 °C/W

= +25°C

T

A

TA = +70°C

Steady state

t<10s 50 °C/W

P

R

P

R

R

T

J, TSTG

θJA

θJA

θJC

D

D

alue Units

1.2

0.8

W

100 °C/W

1.5

1.0

W

83 °C/W

14.5 °C/W

-55 to +150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Source Leakage

30

BV

DSS

 

I

DSS

I

 

GSS

 

1.0 µA

100

V

VGS = 0V, ID = 250µA

= 30V, VGS = 0V

V

DS

nA

VGS = 20V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Diode Forward Voltage

V

GS(th)

R

DS(ON)

V

SD

1.0 1.5 2.0 V







19 23

22 30

0.7 1.2 V

VDS = VGS, ID = 250µA

= 10V, ID = 6.5A

V

mΩ

GS

V

= 4.5V, ID = 6.0A

GS

VGS = 0V, IS = 1.0A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

Total Gate Charge (VGS = 4.5V) Qg 

Total Gate Charge (VGS = 10V) Qg

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

C



iss

C



oss

C

rss

R



G

Q



gs

Q



gd

t

D(on)

t



r

t



D(off)

t

f

t



rr

Q

rr











643

65

49

2.5

5.7

12.5

1.7

1.8

2.2

2.5

12.1

3.0

6.5

1.7





























= 15V, VGS = 0V

V

pF

Ω

nC

nS

nS

nC

DS

f = 1.0MHz

VDS = 0V, VGS = 0V, f = 1.0MHz

V

= 15V, ID = 4.0A

DS

= 10V, VDD = 15V, RG = 6.0Ω,

V

GS

= 6.5A

I

D

IF = 6.5A, dI/dt = 100A/μs

= 6.5A, dI/dt = 100A/μs

I

F

DMN3026LVT

Document number: DS36813 Rev. 3 - 2

2 of 6

www.diodes.com

April 2014

© Diodes Incorporated