Diodes DMN3025LSS User Manual

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Page 1

NEW PRODUCT

Product Summary

(BR)DSS

30V

20m @ V

31m @ VGS = 4.5V

DS(ON)

max

= 10V

TA = +25°C

Description

This MOSFET has been designed to minimize the on-state resistance

) and yet maintain superior switching performance, making it

DS(ON)

ideal for high efficiency power management applications.

Applications

• Backlighting

• Power Management Functions

• DC-DC Converters

NEW PRODUCT

ADVANCE INFORMATION

SO-8

Top View

7.2A

5.8A

max

DMN3025LSS

N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 standards for High Reliability

Mechanical Data

• Case: SO-8

• Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections Indicator: See diagram

• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Weight: 0.008 grams (approximate)

Top View

Internal Schematic

Ordering Information (Note 4)

Part Number Case Packaging

DMN3025LSS-13 SO-8 2500/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

DMN3025LSS

Document number: DS35746 Rev. 3 - 2

Top View

8 5

N3025LS

1 4

1 of 6

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Part no.

Xth week: 01 ~ 53 Year: “11” = 2011

January 2013

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)

NEW PRODUCT

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Value Units

Drain-Source Voltage Gate-Source Voltage

Continuous Drain Current (Note 6) VGS = 10V

Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Drain Current (10µs pulse, duty cycle = 1%) Avalanche Current (L = 0.1mH) Repetitive Avalanche Energy (L = 0.1mH)

Thermal Characteristics (@T

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)

NEW PRODUCT

Thermal Resistance, Junction to Ambient (Note 5)

ADVANCE INFORMATION

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6)

Operating and Storage Temperature Range

DSS

GSS

= +25°C

Steady

State

t<10s

= +70°C

= +25°C

= +70°C

= +25°C, unless otherwise specified.)

= +25°C

TA = +70°C

Steady State

t<10s 44

= +25°C

TA = +70°C

Steady State

t<10s 37

J, TSTG

JA

DMN3025LSS

30 V

±20 V

7.2

5.7

9.6

7.7

3 A

40 A

14.5 A

10.5 mJ

1.4

0.9 87

1.7

1.1 73

°C/W

-55 to +150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage

DSS

GSS

DSS

30 — — — —

—

— V

1 A

±1 A

VGS = 0V, ID = 250A VDS = 30V, VGS = 0V

VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance Diode Forward Voltage

GS(th

DS (ON)

|Y V

0.8 - 2.0 V — — —

—

14 20 23 31 11 - S

0.70 1.0 V

VDS = VGS, ID = 250A

= 10V, ID = 10A

m

= 4.5V, ID = 7.5A

VDS = 5V, ID = 10A

VGS = 0V, IS = 1A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate resistance

iss

oss

rss

R Total Gate Charge (VGS = 4.5V) Qg Total Gate Charge (VGS = 10V) Qg Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

Q Q

D(on

D(off

— — — — — — — — — — — —

641

66 50

2.2 6

13.2

1.7

2.2

3.3

4.4

22.3

5.3

— — — — — — — — — — — —

= 15V, VGS = 0V,

f = 1.0MHz



VDS = 0V, VGS = 0V, f = 1.0MHz

= 15V, ID = 10A

= 15V, VGS = 10V,

= 6, ID = 1A

DMN3025LSS

Document number: DS35746 Rev. 3 - 2

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CUR

OUR

ON-R

OUR

ON-R

OUR

CE ON-R

TANC

N-SO

TAN

NEW PRODUCT

DMN3025LSS

30.0

V = 10V

V = 3.5V

25.0

(A)

20.0

V = 5.0V

V = 4.0V

V = 4.5V

15.0

AIN

10.0

I, D

5.0

0.0 0 0.5 1 1.5 2

V , DRAIN-SOURCE VOLTAGE (V)

Figure 1 Typical Output Characteristic

0.05

0.045

V = 3.0V

V = 2.5V

V = 5V

V = 150°C

I , DRAIN CURRENT (A)

V = 125°C

V = 85°C

V = -55°C

0 0.5 1 1.5 2 2.5 3 3.5 4

V , GATE-SOURCE VOLTAGE (V)

Figure 2 Typical Transfer Characteristic

0.05

0.045

V = 4.5V

V = 25°C

ESISTANCE ( )

0.04

0.035

T = 150°C

0.03

0.025

0.02

0.015

AIN-S

0.01

, D

0.005

DS(ON)

0 5 10 15 20 25 30

I , DRAIN CURRENT(A)

Figure 4 Typical On-Resistance vs.

Drain Current and Temperature

0.04

E ( )

0.035

V = 4.5V

I = 5A

ESIS

0.03

0.025

0.02

T = 125°C

T = 85°C

T = 25°C

T = -55°C

V = 10V

I = 10A

ADVANCE INFORMATION

ESISTANCE ( )

0.04

0.035

0.03

0.025

0.02

0.015

AIN-S

0.01

, D

0.005

DS(ON)

0.00 0 5 10 15 20 25 30

I , DRAIN-SOURCE CURRENT (A)

V = 4.5V

V = 10V

Figure 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

1.8

1.6

ESIS

V = 4.5V

I = 5A

1.4

V = 10V

I = 10A

1.2

(NORMALIZED)

AIN-S

, D

0.8

DS(ON)

0.6

-50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)

Figure 5 On-Resistance Variation with Temperature

DMN3025LSS

Document number: DS35746 Rev. 3 - 2

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0.015

0.01

, D

0.005

DS(ON)

-50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)

Figure 6 On-Resistance Variation with Temperature

January 2013

Page 4

GATE THRESH

TAG

OUR

CE CUR

UNC

TIO

N CAPACITAN

OUR

NEW PRODUCT

ADVANCE INFORMATION

DMN3025LSS

2.5

LD V

I = 1mA

1.5

I = 250µA

0.5

GS(TH)

-50 -25 0 25 50 T , AMBIENT TEMPERATURE (°C)

100 125 150

Figure 7 Gate Threshold Variation vs. Ambient Temperature

10000

T = 150°C

(A)

T = 25°C

I, S

0 0.2 0.4 0.6 0.8 1 1.2

V , SOURCE-DRAIN VOLTAGE (V)

Figure 8 Diode Forward Voltage vs. Current

10000

f = 1MHz

1000

E (pF)

T = 125°C

100

1000

iss

T = 85°C

T = 25°C

DSS

I , DRAIN LEAKAGE CURRENT (nA)

0.1 0102030

V , DRAIN-SOURCE VOLTAGE (V)

Figure 9 Typical Drain-Source Leakage Current vs. Voltage

E (V)

A L

V =15

I = 10A

E V

E-S A

, J

100

oss

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02468101214161820

V , DRAIN-SOURCE VOLTAGE (V)

Figure 10 Typical Junction Capacitance

0 2 4 6 8 10 12 14

Q , TOTAL GATE CHARGE (nC)

Figure 11 Gate-Source Voltage vs. Total Gate Charge

DMN3025LSS

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T T

NEW PRODUCT

D = 0.9 D = 0.7

D = 0.5

D = 0.3

ESIS

0.1

D = 0.1

MAL

D = 0.05

D = 0.02

0.01

D = 0.01

ANSIEN

D = 0.005

r(t),

D = Single Pulse

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000

NEW PRODUCT

Package Outline Dimensions

ADVANCE INFORMATION

Suggested Pad Layout

DMN3025LSS

R (t) = r(t) * R

θθ

JA JA

R = 90°C/W

Duty Cycle, D = t1/ t2

t1, PULSE DURATION TIME (sec)

Figure 12 Transient Thermal Resistance

Dim Min Max

Detail ‘A’

0.254 Gauge Plane

Seating Plane

7°~9

Detail ‘A’

SO-8

A - 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25

b 0.3 0.5

D 4.85 4.95

E 5.90 6.10 E1 3.85 3.95

e 1.27 Typ

h - 0.35

L 0.62 0.82

0° 8°

All Dimensions in mm

Dimensions Value (in mm)

X 0.60 Y 1.55

C1 5.4 C2 1.27

DMN3025LSS

Document number: DS35746 Rev. 3 - 2

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NEW PRODUCT

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated.

NEW PRODUCT

ADVANCE INFORMATION

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

IMPORTANT NOTICE

LIFE SUPPORT

DMN3025LSS

Document number: DS35746 Rev. 3 - 2

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January 2013