Diodes DMN3025LSS User Manual
NEW PRODUCT
Product Summary
V
R
(BR)DSS
30V
20m @ V
31m @ VGS = 4.5V
DS(ON)
max
= 10V
GS
TA = +25°C
Description
This MOSFET has been designed to minimize the on-state resistance
(R
) and yet maintain superior switching performance, making it
DS(ON)
ideal for high efficiency power management applications.
Applications
• Backlighting
• Power Management Functions
• DC-DC Converters
NEW PRODUCT
ADVANCE INFORMATION
SO-8
Top View
I
D
7.2A
5.8A
max
DMN3025LSS
N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
• Case: SO-8
• Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections Indicator: See diagram
• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.008 grams (approximate)
S
S
S
G
Top View
Internal Schematic
D
D
D
D
e3
Ordering Information (Note 4)
Part Number Case Packaging
DMN3025LSS-13 SO-8 2500/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
DMN3025LSS
Document number: DS35746 Rev. 3 - 2
Top View
8 5
N3025LS
YY
WW
1 4
1 of 6
www.diodes.com
Logo
Part no.
Xth week: 01 ~ 53
Year: “11” = 2011
January 2013
© Diodes Incorporated
)
g
g
g
)
r
)
NEW PRODUCT
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) VGS = 10V
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Avalanche Current (L = 0.1mH)
Repetitive Avalanche Energy (L = 0.1mH)
Thermal Characteristics (@T
A
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
NEW PRODUCT
Thermal Resistance, Junction to Ambient (Note 5)
ADVANCE INFORMATION
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
V
DSS
V
GSS
= +25°C
Steady
State
t<10s
T
A
T
= +70°C
A
T
= +25°C
A
= +70°C
T
A
I
D
I
D
I
S
I
DM
I
AS
E
AS
= +25°C, unless otherwise specified.)
= +25°C
T
A
TA = +70°C
Steady State
t<10s 44
= +25°C
T
A
R
TA = +70°C
Steady State
t<10s 37
R
T
J, TSTG
P
P
JA
JA
DMN3025LSS
D
D
30 V
±20 V
7.2
5.7
9.6
7.7
A
A
3 A
40 A
14.5 A
10.5 mJ
1.4
0.9
87
1.7
1.1
73
W
°C/W
W
°C/W
-55 to +150 °C
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV
I
DSS
I
GSS
DSS
30
— —
— —
—
— V
1 A
±1 A
VGS = 0V, ID = 250A
VDS = 30V, VGS = 0V
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V
GS(th
R
DS (ON)
|Y
V
fs
SD
0.8 - 2.0 V
—
—
—
|
—
14 20
23 31
11 - S
0.70 1.0 V
VDS = VGS, ID = 250A
= 10V, ID = 10A
V
m
GS
V
= 4.5V, ID = 7.5A
GS
VDS = 5V, ID = 10A
VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
C
iss
C
oss
C
rss
R
Total Gate Charge (VGS = 4.5V) Qg
Total Gate Charge (VGS = 10V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
Q
Q
t
D(on
t
D(off
s
d
t
t
f
—
—
—
—
—
—
—
—
—
—
—
—
641
66
50
2.2
6
13.2
1.7
2.2
3.3
4.4
22.3
5.3
—
—
—
—
—
—
—
—
—
—
—
—
= 15V, VGS = 0V,
V
pF
nC
ns
DS
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz
V
= 15V, ID = 10A
DS
= 15V, VGS = 10V,
V
DD
= 6, ID = 1A
R
G
DMN3025LSS
Document number: DS35746 Rev. 3 - 2
2 of 6
www.diodes.com
January 2013
© Diodes Incorporated
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