Diodes DMN3025LFG User Manual

Product Summary

V

R

(BR)DSS

30V

18m @ V

28m @ VGS = 4.5V

DS(ON) Max

GS

= 10V

Description

This MOSFET has been designed to minimize the on-state resistance

) and yet maintain superior switching performance, making it

(R

DS(on)

ideal for high efficiency power management applications.

Applications

• Backlighting

NEW PRODUCT

• Power Management Functions

• DC-DC Converters

D

D

D

D

Bottom View

POWERDI3333-8

Pin 1

S

S

S

G

I

D Max

TA = +25°C

7.5A

6.1A

DMN3025LFG

30V N-CHANNEL ENHANCEMENT MODE MOSFET

Features

• Low R

• Small form factor thermally efficient package enables higher

density end products

• Occupies just 33% of the board area occupied by SO-8 enabling

smaller end product

• 100% Unclamped Inductive Switch (UIS) test in production

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

– ensures on state losses are minimized

DS(ON)

Mechanical Data

• Case: POWERDI3333-8

• Case Material: Molded Plastic, "Green" Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections Indicator: See diagram

• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Weight: 0.072 grams (approximate)

1

2

3

4

Top View

Top View

Internal Schematic

8

7

6

5

POWERDI

®

Ordering Information (Note 4)

Part Number Case Packaging

DMN3025LFG-7 POWERDI3333-8 2000/Tape & Reel

DMN3025LFG-13 POWERDI3333-8 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

4. For packaging details, go to our website at http://www.diodes.com.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

Marking Information

POWERDI is a registered trademark of Diodes Incorporated.

DMG3025LFG

Document number: DS35642 Rev. 5 – 2

N25 = Product Type Marking Code

YYWW

N25

YYWW = Date Code Marking
YY = Last digit of year (ex: 11 = 2011)
WW = Week code (01 ~ 53)

1 of 6

www.diodes.com

November 2012

© Diodes Incorporated

θ

)

g

g

g

)

r

)

r

r

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = 10V

Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Avalanche Current (Note 6) L = 0.1mH
Avalanche Energy (Note 6) L = 0.1mH

Thermal Characteristics

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)

NEW PRODUCT

Thermal Resistance, Junction to Ambient (Note 5)

Thermal Resistance, Junction to Case
Operating and Storage Temperature Range

Steady

State

t<10s

V

DSS

V

GSS

= +25°C

T

A

T

= +70°C

A

= +25°C

T

A

= +70°C

T

A

= +25°C

T

A

TA = +70°C

Steady State

t < 10s 37

I

D

I

D

I

S

I

DM

I

AR

E

AR

T

J, TSTG

P

D

R

JA

θ

R

JC

DMN3025LFG

30 V

±20 V

7.5

6.1

10

7.8

2.5 A
60 A
14 A
10 mJ

2.0

1.3
61

6.4

-55 to 150 °C

A

A

W

°C/W

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

30 — — V
— — 1 A
— — ±1 A

VGS = 0V, ID = 250A
VDS = 30V, VGS = 0V
VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y
V

fs

SD

0.8 — 2.0 V
— 14 18
— 23 28

|

— 9 - S
— 0.70 1.0 V

VDS = VGS, ID = 250A
V

= 10V, ID = 7.8A

mΩ

GS

V

= 4.5V, ID = 7.0A

GS

VDS = 10V, ID = 7.8A
VGS = 0V, IS = 6.3A

DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance

C

iss

C

oss

C

rss

R
Total Gate Charge (VGS = 4.5V) Qg
Total Gate Charge (VGS = 10V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

POWERDI is a registered trademark of Diodes Incorporated.

6. I

and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C

AR

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

DMG3025LFG

Document number: DS35642 Rev. 5 – 2

Q

s

Q

d

t

D(on

t

t

D(off

t

f

t

r

Q

r

www.diodes.com

— 605 —
— 74 —
— 58 —
— 1.5 —
— 5.3 —
— 11.6 —
— 2 —
— 2.4 —
— 3.8 —
— 4.1 —
— 17.9 —
— 4.7 —
— 5.5 — ns
— 2.6 — nC

2 of 6

= 15V, VGS = 0V,

V

pF

nC

ns

DS

f = 1.0MHz

Ω

VDS = 0V, VGS = 0V, f = 1.0MHz

V

= 15V, ID = 7.8A

DS

= 15V, VGS = 4.5V,

V

DD

R

= 2.4, RG = 1,

L

= 12A, di/dt = 500A/s

I

F

November 2012

© Diodes Incorporated