Diodes DMN3024SFG User Manual

DMN3024SFG

30V N-CHANNEL ENHANCEMENT MODE MOSFET

POWERDI

®

Product Summary

I

max

D

7.5A

6.3 A

V

(BR)DSS

30V

R

23m @ V

33m @ VGS = 4.5V

DS(ON)

max

= 10V

GS

TA = 25°C

Description and Applications

This MOSFET has been designed to minimize the on-state resistance

) and yet maintain superior switching performance, making it

(R

DS(on)

ideal for high efficiency power management applications.

ADVANCE INFORMATION

• Backlighting

• Power Management Functions

• DC-DC Converters

Top View

POWERDI3333-8

D

Bottom View

Features and Benefits

• 100% Unclamped Inductive Switch (UIS) test in production

• Low R

• Small form factor thermally efficient package enables higher

density end products

• Occupies just 33% of the board area occupied by SO-8 enabling smaller end product

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

– ensures on state losses are minimized

DS(ON)

Mechanical Data

• Case: POWERDI3333-8

• Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections Indicator: See diagram

Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208

• Weight: 0.008 grams (approximate)

Pin 1

S

G

1 2 3 4

Top View

Internal Schematic

8 7 6 5

Ordering Information (Note 4)

Part Number Case Packaging

DMN3024SFG-7 POWERDI3333-8 2000/Tape & Reel

DMN3024SFG-13 POWERDI3333-8 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

4. For packaging details, go to our website at http://www.diodes.com.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

Marking Information

POWERDI is a registered trademark of Diodes Incorporated

DMN3024SFG

Document number: DS35439 Rev. 3 - 2

N34 = Product Type Marking Code

YYWW

N34

YYWW = Date Code Marking YY = Last digit of year (ex: 11 = 2011) WW = Week code (01 ~ 53)

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θ

DMN3024SFG

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Drain-Source Voltage Gate-Source Voltage

Continuous Drain Current (Note 6) VGS = 10V

Continuous Drain Current (Note 6) VGS = 4.5V

Pulsed Drain Current (10s pulse, duty cycle = 1%) Avalanche Current (Note 7) Repetitive Avalanche Energy (Note 7)

Steady

State

t<10s

Steady

State

t<10s

T

= 25°C

A

= 70°C

T

A

= 25°C

T

A

T

= 70°C

A

= 25°C

T

A

= 70°C

T

A

= 25°C

T

A

T

= 70°C

A

V

DSS

V

GSS

I

D

I

D

I

D

I

D

I

DM

I

AS

E

AS

30 V

±25 V

7.5

6.0

10.5

8.5

6.3

5.0

8.5

7.6

A

60 A

9 A

12 mJ

ADVANCE INFORMATION

Thermal Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

T

= 25°C

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6)

A

TA = 70°C

Steady state

t<10s 74

T

= 25°C

A

TA = 70°C

Steady state

t<10s 31 Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7 .UIS in production with L = 0.3mH, TJ = 25°C

P

R

P

R R

T

J, TSTG

D

JA

θ

D

JA

θ

JC

0.9

0.5

145

2.2

1.4 58

11

-55 to +150 °C

W

°C/W

W

°C/W

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DMN3024SFG

Document number: DS35439 Rev. 3 - 2

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)

g

)

r

)

R

C

U

R

T

R

C

U

R

T

DMN3024SFG

Electrical Characteristics T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

30 - - V

- - 1 A

- - ±100 nA

VGS = 0V, ID = 250 A VDS = 30V, VGS = 0V

VGS = ±25V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage

Static Drain-Source On-Resistance Forward Transfer Admittance

Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y V

fs

SD

1.0 1.3 2.4 V

- 15 23

- 24 33

|

- 11 - S

- 0.69 1 V

VDS = VGS, ID = 250A

V

= 10V, ID = 10A

m

GS

V

= 4.5V, ID = 7.5A

GS

VDS = 5V, ID = 10.0A

VGS = 0V, IS = 1A DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance

ADVANCE INFORMATION

Total Gate Charge VGS = 4.5V Qg

C

iss

C

oss

C

rss

R

Total Gate Charge VGS = 10V Qg Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time

Notes: 8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

t

Q Q

D(on

t

D(off

t

s d

f

- 479 - pF

- 97 - pF

- 61 - pF

0.4 1.1 1.6 

- 5.0 - nC

- 10.5 - nC

- 1.8 - nC

- 1.6 - nC

- 2.9 - ns

- 7.9 - ns

- 14.6 - ns

- 3.1 - ns

V

= 15V, VGS = 0V,

DS

f = 1.0MHz

VDS = 0V, VGS = 0V, f = 1MHz

V

= 15V, ID = 10A

DS

V

= 10V, VDS = 15V,

GS

R

= 3, RL= 1.5,

G

(A) EN

30

25

20

V = 10V

GS

V = 4.5V

GS

V = 4.0V

GS

(A) EN

20

15

V = 5V

DS

15

AIN

10

D

I, D

5

V = 2.5V

GS

0

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 1 Typical Output Ch ar acteristic

V = 3.5V

GS

V = 3.0V

GS

10

V = 150°C

AIN

D

I, D

5

0

0 0.5 1 1.5 2 2.5 3 3.5 4

V , GATE-SOURCE VOLTAGE (V)

GS

Fig. 2 Typical Transfer Characteristic

GS

V = 125°C

GS

V = 85°C

GS

V = -55°C

V = 25°C

GS

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DMN3024SFG

Document number: DS35439 Rev. 3 - 2

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R

OUR

C

ON-R

TANC

R

RAIN-SOUR

CE O

N

R

TAN

C

OUR

CE C

U

R

N

T

DMN3024SFG

Ω

E ( )

0.05

0.04

Ω

E ( )

V = 10V

GS

0.04

0.03

ESIS

E

0.03

V = 3.5V

GS

V = 4.5V

GS

ESIS

-

0.02

V = 10V

AIN-S

0.01

, D

DS(ON)

0

0102015 25 30

5 I , DRAIN-SOURCE CURRENT (A)

D

Fig. 3 Typical On-Resistance

vs. Drain C urrent an d G at e Vol t age

ADVANCE INFORMATION

1.7

1.5

GS

V = 4.5V

GS

I = 5A

D

0.01

, D

DS(ON)

0

0 5 10 15 20 25 30

I , DRAIN CURRENT (A)

D

Fig. 4 Typical On-Resistance

vs. Drain Current and Temperature

0.06

Ω

0.05

T = 150°C

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

1.3

1.1

0.9

DSON

R , DRAIN-SOURCE

ON-RESISTANCE (NORMALIZED)

0.7

0.5

-50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)

A

Fig. 5 On-Resistance Variation with T emperature

2.0

1.8

V = 10V

GS

I = 10A

D

0.04

V = 4.5V

GS

I = 5A

0.03

D

0.02

V = 10V

GS

I = 10A

D

0.01

DSON

R , DRAIN-SOURCE ON-RESISTANCE ( )

0

-50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)

A

Fig. 6 On-Resistance Variation with Temperature 20 18 16

1.6

1.4

I = 1mA

D

(A)

14

E

12

T = 25°C

A

10

1.2

1.0

0.8

GS(TH)

V , GATE THRESHOLD VOLT AGE (V)

0.6

-50 -25 0 25 50 75 100 125 150

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

I = 250µA

D

T , AMBIENT TEMPERATURE (°C)

A

8 6

S

I, S

4 2

0

0.2 0.4 0.6 0.8 1.0 1.2 V , SOURCE-DRAIN VOLT AGE (V)

SD

Fig. 8 Diod e Forward Voltage vs. Cur r ent

POWERDI is a registered trademark of Diodes Incorporated

DMN3024SFG

Document number: DS35439 Rev. 3 - 2

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C, CAPACITANC

F

GAT

O

URC

OLTAG

P, P

T

R

T P

O

R

T

R

T

HER

R

T

C

DMN3024SFG

1,000

f = 1MHz

C

iss

10

8

E (V)

)

E (p

100

10

0 5 10 15 20 25 30

C

oss

C

rss

V , DRAIN-SOURCE VOLTAGE (V)

DS

6

E V

4

E-S

2

GS

V,

0

02 4 6 81012

Fig. 9 Typical Total Capacitance

ADVANCE INFORMATION

(W)

IWE

100

90 80 70

Single Pulse R = 61C/W

°

θ

JA

R = r * R

θθ

JA(t) (t) JA

T - T = P * R

JA JA(t)

θ

V = 15V

DS

I = 10A

D

Q , TOTAL GATE CHARGE (nC)

g

Fig. 10 Gate-Charge Characteristics

60 50

ANSIEN

40 30

EAK

20

(PK)

10

0

0.001 0.01 0.1 1 10 100 1,0000.0001 t1, PULSE DURATION TIME (sec)

Fig. 11 Single Pulse Maximum Power Dissipation

1

E

D = 0.7

D = 0.5

AN

D = 0.3

ESIS

0.1

D = 0.1

MAL

D = 0.05

D = 0.02

0.01

D = 0.01

ANSIEN

D = 0.005

r(t),

D = Single Pulse

0.001

0.00001 1,0000.0001

0.001 0.01 0.1 1 10 100 t , PULSE DURATION TIME (s)

1

D = 0.9

R (t) = r(t) * R

θθ

JA JA

R = 54°C/W

θ

JA

Duty Cycle, D = t1/ t2

Fig. 12 Transient Thermal Response

POWERDI is a registered trademark of Diodes Incorporated

DMN3024SFG

Document number: DS35439 Rev. 3 - 2

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C

DMN3024SFG

Package Outline Dimensions

ADVANCE INFORMATION

E

A

Pin 1 ID

E2

A3

A1

D

D2

L

14

85

b (8x)eZ (4x)

(4x)

b2

(4x)

L1

(3x)

POWERDI3333-8

Dim Min Max Typ

D 3.25 3.35 3.30

E 3.25 3.35 3.30 D2 2.22 2.32 2.27 E2 1.56 1.66 1.61

A 0.75 0.85 0.80 A1 0 0.05 0.02 A3

− −

b 0.27 0.37 0.32

b2

− −

L 0.35 0.45 0.40

L1

− −

e

− −

Z

− −

All Dimensions in mm

0.203

0.20

0.39

0.65

0.515

Suggested Pad Layout

Y2

Y3

X G

85

G1

14

Y1

Y

Dimensions Value (in mm)

C 0.650

G 0.230

G1 0.420

Y 3.700 Y1 2.250 Y2 1.850 Y3 0.700

X 2.370 X2 0.420

X2

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DMN3024SFG

Document number: DS35439 Rev. 3 - 2

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DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document o r products described herein in such applica tions shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

ADVANCE INFORMATION

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

www.diodes.com

IMPORTANT NOTICE

LIFE SUPPORT

DMN3024SFG

POWERDI is a registered trademark of Diodes Incorporated

DMN3024SFG

Document number: DS35439 Rev. 3 - 2

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Diodes DMN3024SFG User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual