Diodes DMN3024SFG User Manual
DMN3024SFG
30V N-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI
®
Product Summary
I
max
D
7.5A
6.3 A
V
(BR)DSS
30V
R
23m @ V
33m @ VGS = 4.5V
DS(ON)
max
= 10V
GS
TA = 25°C
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
) and yet maintain superior switching performance, making it
(R
DS(on)
ideal for high efficiency power management applications.
ADVANCE INFORMATION
• Backlighting
• Power Management Functions
• DC-DC Converters
Top View
POWERDI3333-8
D
D
D
D
Bottom View
Features and Benefits
• 100% Unclamped Inductive Switch (UIS) test in production
• Low R
• Small form factor thermally efficient package enables higher
density end products
• Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
– ensures on state losses are minimized
DS(ON)
Mechanical Data
• Case: POWERDI3333-8
• Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections Indicator: See diagram
Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.008 grams (approximate)
Pin 1
S
S
S
G
1
2
3
4
Top View
Internal Schematic
8
7
6
5
Ordering Information (Note 4)
Part Number Case Packaging
DMN3024SFG-7 POWERDI3333-8 2000/Tape & Reel
DMN3024SFG-13 POWERDI3333-8 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
4. For packaging details, go to our website at http://www.diodes.com.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
POWERDI is a registered trademark of Diodes Incorporated
DMN3024SFG
Document number: DS35439 Rev. 3 - 2
N34 = Product Type Marking Code
YYWW
N34
YYWW = Date Code Marking
YY = Last digit of year (ex: 11 = 2011)
WW = Week code (01 ~ 53)
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May 2012
θ
DMN3024SFG
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) VGS = 10V
Continuous Drain Current (Note 6) VGS = 4.5V
Pulsed Drain Current (10s pulse, duty cycle = 1%)
Avalanche Current (Note 7)
Repetitive Avalanche Energy (Note 7)
Steady
State
t<10s
Steady
State
t<10s
T
= 25°C
A
= 70°C
T
A
= 25°C
T
A
T
= 70°C
A
= 25°C
T
A
= 70°C
T
A
= 25°C
T
A
T
= 70°C
A
V
DSS
V
GSS
I
D
I
D
I
D
I
D
I
DM
I
AS
E
AS
30 V
±25 V
7.5
6.0
10.5
8.5
6.3
5.0
8.5
7.6
A
A
A
A
60 A
9 A
12 mJ
ADVANCE INFORMATION
Thermal Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Units
T
= 25°C
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
A
TA = 70°C
Steady state
t<10s 74
T
= 25°C
A
TA = 70°C
Steady state
t<10s 31
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7 .UIS in production with L = 0.3mH, TJ = 25°C
P
R
P
R
R
T
J, TSTG
D
JA
θ
D
JA
θ
JC
0.9
0.5
145
2.2
1.4
58
11
-55 to +150 °C
W
°C/W
W
°C/W
POWERDI is a registered trademark of Diodes Incorporated
DMN3024SFG
Document number: DS35439 Rev. 3 - 2
2 of 7
www.diodes.com
May 2012
© Diodes Incorporated
)
g
g
g
)
r
)
R
C
U
R
R
T
R
C
U
R
R
T
DMN3024SFG
Electrical Characteristics T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV
I
DSS
I
GSS
DSS
30 - - V
- - 1 A
- - ±100 nA
VGS = 0V, ID = 250 A
VDS = 30V, VGS = 0V
VGS = ±25V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V
GS(th
R
DS (ON)
|Y
V
fs
SD
1.0 1.3 2.4 V
- 15 23
- 24 33
|
- 11 - S
- 0.69 1 V
VDS = VGS, ID = 250A
V
= 10V, ID = 10A
m
GS
V
= 4.5V, ID = 7.5A
GS
VDS = 5V, ID = 10.0A
VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
ADVANCE INFORMATION
Total Gate Charge VGS = 4.5V Qg
C
iss
C
oss
C
rss
R
Total Gate Charge VGS = 10V Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes: 8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
t
t
Q
Q
D(on
t
D(off
t
s
d
f
- 479 - pF
- 97 - pF
- 61 - pF
0.4 1.1 1.6
- 5.0 - nC
- 10.5 - nC
- 1.8 - nC
- 1.6 - nC
- 2.9 - ns
- 7.9 - ns
- 14.6 - ns
- 3.1 - ns
V
= 15V, VGS = 0V,
DS
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
V
= 15V, ID = 10A
DS
V
= 10V, VDS = 15V,
GS
R
= 3, RL= 1.5,
G
(A)
EN
30
25
20
V = 10V
GS
V = 4.5V
GS
V = 4.0V
GS
(A)
EN
20
15
V = 5V
DS
15
AIN
10
D
I, D
5
V = 2.5V
GS
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 1 Typical Output Ch ar acteristic
V = 3.5V
GS
V = 3.0V
GS
10
V = 150°C
AIN
D
I, D
5
0
0 0.5 1 1.5 2 2.5 3 3.5 4
V , GATE-SOURCE VOLTAGE (V)
GS
Fig. 2 Typical Transfer Characteristic
GS
V = 125°C
GS
V = 85°C
GS
V = -55°C
V = 25°C
GS
GS
POWERDI is a registered trademark of Diodes Incorporated
DMN3024SFG
Document number: DS35439 Rev. 3 - 2
3 of 7
www.diodes.com
May 2012
© Diodes Incorporated
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