Diodes DMN3024LSS User Manual

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Product Summary

I

V

R

(BR)DSS

30V

DS(on)

24mΩ @ V

36mΩ @ VGS= 4.5V

GS

= 10V

T

= 25°C

A

8.5A

6.9A

D

Description and Applications

This new generation MOSFET has been designed to minimize the on­state resistance (R
performance, making it ideal for high efficiency power management
applications.

• Motor control

• Backlighting

• DC-DC Converters

• Power management functions

) and yet maintain superior switching

DS(on)



S

S

G

TOP VIEW TOP VIEW

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Diodes Incorporated

DMN3024LSS

30V N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

• Low on-resistance

• Fast switching speed

• “Green” component and RoHS compliant (Note 1)

Mechanical Data

• Case: SO-8

• Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0 (Note 1)

• Moisture Sensitivity: Level 1 per J-STD-020D

• Terminals Connections: See Diagram

• Terminals: Finish - Matte Tin annealed over Copper lead frame.

Solderable per MIL-STD-202, Method 208

• Weight: 0.074 grams (approximate)

D

DS

D

G

D

D

S

Equivalent Circuit

Ordering Information (Note 1)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

DMN3024LSS-13 N3024LS 13 12 2,500

Note: 1. Diodes, Inc. defines “Green” products as those which are Eu RoHS compliant and contain no halogens or antimony compounds; further information

about Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website.

Marking Information

DMN3024LSS

Document Revision: 3

N3024LS

YY

WW

N3024LS = Product Type Marking Code
= Manufacturer’s Marking
YY WW = Date Code Marking
YY = Year (ex: 09 = 2009)
WW = Week (01-52)

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DMN3024LSS

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Drain-Source voltage
Gate-Source voltage

Continuous Drain current

V

GS

= 10V

TA = 70°C (Note 3)

(Note 3)

V

DSS

V

GS

I

D

30 V

±20

V

8.5

6.8

A

(Note 2) 6.4

Pulsed Drain current

V

GS

= 10V

(Note 4)
Continuous Source current (Body diode) (Note 3)
Pulsed Source current (Body diode) (Note 4)

IDM

I

S

I

SM

36 A

4.5 A
36 A

Thermal Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Power dissipation
Linear derating factor

Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead (Note 5)

Operating and storage temperature range

Notes: 2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is

measured when operating in a steady-state condition.

3. Same as note (2), except the device is measured at t ≤ 10 sec.

4. Same as note (2), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature.

5. Thermal resistance from junction to solder-point (at the end of the drain lead): the device is operating in a steady-state condition.

(Note 2)

P

D

(Note 3)
(Note 2)

(Note 3) 45

R

JA

θ

R

JL

, T

T

J

STG

1.6

12.5

2.8

22.2

80

35

-55 to 150

W

mW/°C

°C/W
°C/W

°C

DMN3024LSS

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Thermal Characteristics

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DMN3024LSS

100

R

Limited

DS(on)

10

1

DC

100m

10m

Drain Current (A)

D

1m

I

100m 1 10

1s

100ms

Single Pulse

T

=25°C

amb

10ms

1ms

100µs

VDS Drain-Source Voltag e (V)

Safe Operating Area

80

T

=25°C

70
60
50
40
30
20
10

Thermal Resistance (° C/W)

amb

D=0.5

D=0.2

0

100µ 1m 10m 100m 1 10 100 1k

Single Pulse

D=0.05

D=0.1

Pulse Width (s)

Transient Thermal Impedance

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0
0 20 40 60 80 100 120 140 160

Max Power Dissipatio n (W )

Temperature (°C)

25mm x 25mm

1oz FR4

Derating Curve

Single Pulse

T

=25°C

100

10

Maximum Power (W)

1

100µ 1m 10m 100m 1 10 100 1k

amb

Pulse Width (s)

Pulse Power Dissipation

DMN3024LSS

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DMN3024LSS

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

30

BV

DSS

⎯ ⎯

I

DSS

I

⎯ ⎯

GSS

⎯ ⎯

0.5

±100 nA

V

ID = 250μA, VGS= 0V

μA

VDS= 30V, VGS= 0V
VGS= ±20V, VDS= 0V

ON CHARACTERISTICS

Gate Threshold Voltage

Static Drain-Source On-Resistance (Note 6)
Forward Transconductance (Notes 6 & 7)

Diode Forward Voltage (Note 6)
Reverse recovery time (Note 7)
Reverse recovery charge (Note 7)

V

GS(th)

R

⎯ ⎯

DS (ON)

g

fs

V

SD

t

rr

Q

rr

1.0

⎯
⎯

⎯

⎯

16.5

0.82 1.2 V

12

4.8

3.0 V

0.024

0.036

⎯

⎯
⎯

Ω
S

ns

nC

ID= 250μA, VDS= VGS
V

= 10V, ID= 7.0A

GS

V

= 4.5V, ID= 6.0A

GS

VDS= 15V, ID= 7.1A
IS= 1.7A, VGS= 0V

= 2.2A, di/dt= 100A/μs

I

S

DYNAMIC CHARACTERISTICS (Note 7)

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

Total Gate Charge
Total Gate Charge

Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time (Note 8)
Turn-On Rise Time (Note 8)
Turn-Off Delay Time (Note 8)
Turn-Off Fall Time (Note 8)

Notes: 6. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%

7. For design aid only, not subject to production testing.

8. Switching characteristics are independent of operating junction temperatures.

C

⎯

iss

C

oss

C

rss

Q

g

Q

g

Q

gs

Q

⎯

gd

t

D(on)

t

r

t

D(off)

t

f

⎯

⎯
⎯
⎯

⎯

⎯
⎯

⎯

⎯

608
132

71

6.3

12.9

2.5

2.5

2.9

3.3
16

8

⎯
⎯
⎯

⎯
⎯

⎯
⎯
⎯
⎯
⎯
⎯

pF
pF
pF

nC
nC

nC
nC

ns
ns
ns
ns

= 15V, VGS= 0V

V

DS

f= 1MHz

V

= 15V, VGS= 4.5V

DS

= 7A

I

D

V

= 15V, VGS= 10V

DS

= 7A

I

D

V

= 15V, VGS= 10V

DD

= 1A, RG ≅ 6.0Ω

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D

DMN3024LSS

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Typical Characteristics

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Diodes Incorporated

DMN3024LSS

10V

5V

10

1

0.1

Drain Current (A)

D

I

0.01

0.1 1 10

T = 25°C

VDS Drain-Source Voltage (V)

Output Ch aracteristics

10

VDS = 10V

T = 150°C

1

Drain Current (A)

D

I

0.1
234

T = 25°C

VGS Gate-Source Voltage (V)

Typical Transfer Characteristics

4V

3.5V

3V

2.5V
V

T = 150°C

10

1

0.1

Drain Current (A)

GS

D

I

0.01

0.1 1 10

10V

VDS Drain- Source Vol tag e (V)

Output Ch aracteristics

1.6

1.4

GS(th)

1.2

and V

1.0

DS(on)

0.8

0.6

0.4

Normalised R

-50 0 50 100 150

Tj Junctio n Temperature (°C)

VGS = 10V
ID = 7A

VGS = V
ID = 250uA

Normalised Curves v Tem perature

4V

DS

3.5V
3V

R

2.5V

2V

DS(on)

V

GS(t h)

V

GS

1.5V

1000

100

10

0.1

0.01

Drain-Source On-Resistance (W)

DS(on)

R

On-Resistance v Drain Cu rrent

2.5V

1

0.01 0.1 1 10

T = 25°C

3V

ID Drain Current (A)

3.5V

4V

4.5V
10V

V

GS

10

1

0.1

0.01

Reverse Drain Current (A)

1E-3

SD

I

0.2 0.4 0.6 0.8 1.0

T = 150°C

Source-Drain Vol tag e (V)

V

SD

Source-Drain Diode Forward Voltage

T = 25°C

Vgs = -3V

DMN3024LSS

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Typical Characteristics - continued

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DMN3024LSS

C Capacitance (pF)

Capacitance v Drain-Source Voltage

Test Circuits

Q

V

G

GS

900
800
700
600
500
400

C

ISS

C

OSS

300
200
100

0

110

VDS - Drain - Source Voltage (V)

Q

G

Q

GD

VGS = 0V
f = 1MHz

ID = 7A

9
8
7
6
5

10

C

RSS

4
3
2
1

Gate-Source Voltage (V)

GS

0

V

01234567891011121314

VDS = 15V

Q - Charge (nC)

Gate-Source Voltage v Gate Charge

Current

regulator

12V

50k

I

G

Sameas

D.U. T

V

DS

D.U. T

I

V

GS

D

Charge

Gate charge test circuit

R

D

V

GS

R

G

V

Switching time test circuit

DS

V

DD

V

90%

10%

V

Basicgatechargewaveform

DS

GS

t

d(on)

t

r

t

(on)

t

d(off)

t

r

t

(on)

Switching time waveforms

DMN3024LSS

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Package Outline Dimensions

DIM Inches Millimeters DIM Inches Millimeters

Min. Max. Min. Max. Min. Max. Min.

A 0.053 0.069 1.35 1.75 e 0.050 BSC 1.27 BSC

A1 0.004 0.010 0.10 0.25 b 0.013 0.020 0.33 0.51

D 0.189 0.197 4.80 5.00 c 0.008 0.010 0.19 0.25
H 0.228 0.244 5.80 6.20
E 0.150 0.157 3.80 4.00 h 0.010 0.020 0.25 0.50

L 0.016 0.050 0.40 1.27 - - - - -

Suggested Pad Layout

0.6
.024

7.0

0.275

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DMN3024LSS

hx45°

Max.

θ

0° 8° 0° 8°

1.52

0.060

4.0

0.155

1.27

0.050

mm

inches

DMN3024LSS

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IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2009, Diodes Incorporated

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Diodes Incorporated

DMN3024LSS

DMN3024LSS

Document Revision: 3

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