Diodes DMN3024LSS User Manual
A
f
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Product Summary
I
V
R
(BR)DSS
30V
DS(on)
24mΩ @ V
36mΩ @ VGS= 4.5V
GS
= 10V
T
= 25°C
A
8.5A
6.9A
D
Description and Applications
This new generation MOSFET has been designed to minimize the onstate resistance (R
performance, making it ideal for high efficiency power management
applications.
• Motor control
• Backlighting
• DC-DC Converters
• Power management functions
) and yet maintain superior switching
DS(on)
S
S
G
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DMN3024LSS
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
• Low on-resistance
• Fast switching speed
• “Green” component and RoHS compliant (Note 1)
Mechanical Data
• Case: SO-8
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0 (Note 1)
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals Connections: See Diagram
• Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
• Weight: 0.074 grams (approximate)
D
DS
D
G
D
D
S
Equivalent Circuit
Ordering Information (Note 1)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
DMN3024LSS-13 N3024LS 13 12 2,500
Note: 1. Diodes, Inc. defines “Green” products as those which are Eu RoHS compliant and contain no halogens or antimony compounds; further information
about Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website.
Marking Information
DMN3024LSS
Document Revision: 3
N3024LS
YY
WW
N3024LS = Product Type Marking Code
= Manufacturer’s Marking
YY WW = Date Code Marking
YY = Year (ex: 09 = 2009)
WW = Week (01-52)
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DMN3024LSS
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Drain-Source voltage
Gate-Source voltage
Continuous Drain current
V
GS
= 10V
TA = 70°C (Note 3)
(Note 3)
V
DSS
V
GS
I
D
30 V
±20
V
8.5
6.8
A
(Note 2) 6.4
Pulsed Drain current
V
GS
= 10V
(Note 4)
Continuous Source current (Body diode) (Note 3)
Pulsed Source current (Body diode) (Note 4)
IDM
I
S
I
SM
36 A
4.5 A
36 A
Thermal Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Power dissipation
Linear derating factor
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead (Note 5)
Operating and storage temperature range
Notes: 2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
3. Same as note (2), except the device is measured at t ≤ 10 sec.
4. Same as note (2), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature.
5. Thermal resistance from junction to solder-point (at the end of the drain lead): the device is operating in a steady-state condition.
(Note 2)
P
D
(Note 3)
(Note 2)
(Note 3) 45
R
JA
θ
R
JL
, T
T
J
STG
1.6
12.5
2.8
22.2
80
35
-55 to 150
W
mW/°C
°C/W
°C/W
°C
DMN3024LSS
Document Revision: 3
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Thermal Characteristics
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DMN3024LSS
100
R
Limited
DS(on)
10
1
DC
100m
10m
Drain Current (A)
D
1m
I
100m 1 10
1s
100ms
Single Pulse
T
=25°C
amb
10ms
1ms
100µs
VDS Drain-Source Voltag e (V)
Safe Operating Area
80
T
=25°C
70
60
50
40
30
20
10
Thermal Resistance (° C/W)
amb
D=0.5
D=0.2
0
100µ 1m 10m 100m 1 10 100 1k
Single Pulse
D=0.05
D=0.1
Pulse Width (s)
Transient Thermal Impedance
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0 20 40 60 80 100 120 140 160
Max Power Dissipatio n (W )
Temperature (°C)
25mm x 25mm
1oz FR4
Derating Curve
Single Pulse
T
=25°C
100
10
Maximum Power (W)
1
100µ 1m 10m 100m 1 10 100 1k
amb
Pulse Width (s)
Pulse Power Dissipation
DMN3024LSS
Document Revision: 3
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July 2009
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