Diodes DMN3018SSS User Manual

NEW PRODUCT

Product Summary

I

D

TA = 25°C

7.3A

5.5A

V

(BR)DSS

30V

R

21m @ V

35m @ VGS = 4.5V

DS(ON)

max

= 10V

GS

Description and Applications

This MOSFET has been designed to minimize the on-state resistance

) and yet maintain superior switching performance, making it

(R

DS(on)

ideal for high efficiency power management applications.

• Backlighting

• Power Management Functions

• DC-DC Converters

ADVANCE INFORMATION

ESD PROTECTED

SO-8

Top View

max

DMN3018SSS

30V N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• ESD Protected Gate

• “Green” component and RoHS compliant (Notes 1 & 2)

• Qualified to AEC-Q101 standards for High Reliability

Mechanical Data

• Case: SO-8

• Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections Indicator: See diagram

• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Weight: 0.008 grams (approximate)

Drain

S

S
S
G

Top View

Pin Configuration

D

D
D
D

Gate

Gate

Protection

Diode

Equivalent Circuit Per Element

Source

Body
Diode

Ordering Information (Note 3)

Part Number Case Packaging

DMN3018SSS-13 SO-8 2500/Tape & Reel

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.

2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Top View

8 5

DMN3018SSS

Document number: DS35501 Rev. 5 - 2

N3018SS

WW

YY

1 4

1 of 6

www.diodes.com

Logo
Part no.

Xth week: 01 ~ 53
Year: “11” = 2011

February 2012

© Diodes Incorporated

θ

)

g

g

g

)

r

)

r

r

NEW PRODUCT

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = 10V

Continuous Drain Current (Note 5) VGS = 4.5V

Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Maximum Body Diode continuous Current

Thermal Characteristics @T

Total Power Dissipation (Note 4)

ADVANCE INFORMATION

Thermal Resistance, Junction to Ambient (Note 4)

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)

Operating and Storage Temperature Range

DMN3018SSS

V

DSS

V

GSS

T

Steady

State

t<10s

Steady

State

t<10s

= 25°C unless otherwise specified

A

= 25°C

A

= 70°C

T

A

T

= 25°C

A

T

= 70°C

A

T

= 25°C

A

T

= 70°C

A

= 25°C

T

A

= 70°C

T

A

I

D

I

D

I

D

I

D

I

DM

I

S

Characteristic Symbol Value Units

T

= 25°C

A

TA = 70°C

Steady state

t<10s 50 °C/W

T

= 25°C

A

TA = 70°C

Steady state

t<10s 42 °C/W

P

R

P

R
R

T

J, TSTG

D

JA

θ

D

JA

θ

JC

30 V

±25 V

7.3

5.7

9.7

7.8

5.5

4.3

7.6

5.8

A

A

A

A

60 A

2.5 A

1.4

0.9

W

90 °C/W

1.7

1.1

W

75 °C/W

7.6 °C/W

-55 to +150 °C

Electrical Characteristics T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

30 - - V

- - 1 A

- - ±10 A

VGS = 0V, ID = 250A
VDS = 24V, VGS = 0V

VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage

Static Drain-Source On-Resistance
Forward Transfer Admittance

Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y
V

SD

|

fs

1 1.7 2.1 V

- 15 21

- 20 35

- 8.3 - S

0.5 - 1.2 V

VDS = VGS, ID = 250A

= 10V, ID = 10A

V

mΩ

GS

V

= 4.5V, ID = 8.5A

GS

VDS = 5V, ID = 6.9A

VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance

C

iss

C

oss

C

rss

R
Total Gate Charge (VGS = 4.5V) Qg
Total Gate Charge (VGS = 10V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge

Notes: 4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to product testing.

DMN3018SSS

Document number: DS35501 Rev. 5 - 2

Q

s

Q

d

t

D(on

t

t

D(off

t

f

T

r

Q

r

www.diodes.com

- 697 - pF

- 97 - pF

- 67 - pF

- 1.47 -

- 6.0 - nC

- 13.2 - nC

- 2.2 - nC

- 1.8 - nC

- 4.3 - ns

- 4.4 - ns

- 20.1 - ns

- 4.1 - ns

- 7.3 - ns

- 7.9 - nC

2 of 6

V

= 15V, VGS = 0V,

DS

f = 1.0MHz

Ω

VDS = 0V, VGS = 0V, f = 1.0MHz

V

= 10V, VDS = 15V,

GS

= 9A

I

D

V

= 15V, VGS = 10V,

DD

= 15,ID = 1A, RG = 6

R

L

I

= 9A, di/dt = 500A/s

F

February 2012

© Diodes Incorporated