Diodes DMN3018SSS User Manual

NEW PRODUCT

Product Summary

I

D

TA = 25°C

7.3A

5.5A

V

(BR)DSS

30V

R

21m @ V

35m @ VGS = 4.5V

DS(ON)

max

= 10V

GS

Description and Applications

This MOSFET has been designed to minimize the on-state resistance

) and yet maintain superior switching performance, making it

(R

DS(on)

ideal for high efficiency power management applications.

• Backlighting

• Power Management Functions

• DC-DC Converters

ADVANCE INFORMATION

ESD PROTECTED

SO-8

Top View

max

DMN3018SSS

30V N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• ESD Protected Gate

• “Green” component and RoHS compliant (Notes 1 & 2)

• Qualified to AEC-Q101 standards for High Reliability

Mechanical Data

• Case: SO-8

• Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections Indicator: See diagram

• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Weight: 0.008 grams (approximate)

Drain

S

S S G

Top View

Pin Configuration

D

D D D

Gate

Protection

Diode

Equivalent Circuit Per Element

Source

Body Diode

Ordering Information (Note 3)

Part Number Case Packaging

DMN3018SSS-13 SO-8 2500/Tape & Reel

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.

2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Top View

8 5

DMN3018SSS

Document number: DS35501 Rev. 5 - 2

N3018SS

WW

YY

1 4

1 of 6

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Logo Part no.

Xth week: 01 ~ 53 Year: “11” = 2011

February 2012

θ

)

g

)

r

)

r

NEW PRODUCT

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Drain-Source Voltage Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = 10V

Continuous Drain Current (Note 5) VGS = 4.5V

Pulsed Drain Current (10μs pulse, duty cycle = 1%) Maximum Body Diode continuous Current

Thermal Characteristics @T

Total Power Dissipation (Note 4)

ADVANCE INFORMATION

Thermal Resistance, Junction to Ambient (Note 4)

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Case (Note 5)

Operating and Storage Temperature Range

DMN3018SSS

V

DSS

V

GSS

T

Steady

State

t<10s

Steady

State

t<10s

= 25°C unless otherwise specified

A

= 25°C

A

= 70°C

T

A

T

= 25°C

A

T

= 70°C

A

T

= 25°C

A

T

= 70°C

A

= 25°C

T

A

= 70°C

T

A

I

D

I

D

I

D

I

D

I

DM

I

S

Characteristic Symbol Value Units

T

= 25°C

A

TA = 70°C

Steady state

t<10s 50 °C/W

T

= 25°C

A

TA = 70°C

Steady state

t<10s 42 °C/W

P

R

P

R R

T

J, TSTG

D

JA

θ

D

JA

θ

JC

30 V

±25 V

7.3

5.7

9.7

7.8

5.5

4.3

7.6

5.8

A

60 A

2.5 A

1.4

0.9

W

90 °C/W

1.7

1.1

W

75 °C/W

7.6 °C/W

-55 to +150 °C

Electrical Characteristics T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

30 - - V

- - 1 A

- - ±10 A

VGS = 0V, ID = 250A VDS = 24V, VGS = 0V

VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 6) Gate Threshold Voltage

Static Drain-Source On-Resistance Forward Transfer Admittance

Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y V

SD

|

fs

1 1.7 2.1 V

- 15 21

- 20 35

- 8.3 - S

0.5 - 1.2 V

VDS = VGS, ID = 250A

= 10V, ID = 10A

V

mΩ

GS

V

= 4.5V, ID = 8.5A

GS

VDS = 5V, ID = 6.9A

VGS = 0V, IS = 1A DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate resistance

C

iss

C

oss

C

rss

R Total Gate Charge (VGS = 4.5V) Qg Total Gate Charge (VGS = 10V) Qg Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge

Notes: 4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to product testing.

DMN3018SSS

Document number: DS35501 Rev. 5 - 2

Q

s

Q

d

t

D(on

t

D(off

t

f

T

r

Q

r

www.diodes.com

- 697 - pF

- 97 - pF

- 67 - pF

- 1.47 -

- 6.0 - nC

- 13.2 - nC

- 2.2 - nC

- 1.8 - nC

- 4.3 - ns

- 4.4 - ns

- 20.1 - ns

- 4.1 - ns

- 7.3 - ns

- 7.9 - nC

2 of 6

V

= 15V, VGS = 0V,

DS

f = 1.0MHz

Ω

VDS = 0V, VGS = 0V, f = 1.0MHz

V

= 10V, VDS = 15V,

GS

= 9A

I

D

V

= 15V, VGS = 10V,

DD

= 15,ID = 1A, RG = 6

R

L

I

= 9A, di/dt = 500A/s

F

February 2012

R

CUR

RENT

R

N

CUR

REN

T

R

OUR

ON-R

R

OUR

ON-R

R

OUR

C

R

RAIN-SOUR

CE O

N-R

T

N

C

NEW PRODUCT

DMN3018SSS

30

25

(A)

20

V = 5.0VDS

16

(A)

12

15

AIN

10

D

I, D

5

0

0 0.5 1.0 1.5 2.0 2.5 3.0

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig.1 Typical Output Characteristic

0.1

ADVANCE INFORMATION

Ω

V = 2.5VGS

ESISTANCE ( )

AI

D

I, D

8

T = 150°C

A

T = 125°C

A

4

T = -55°C

0

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

V , GATE-SOURCE VOLTAGE

GS

Fig.2 Typical Transfer Characteristics

0.08

Ω

V = 4.5V

GS

0.06

ESISTANCE ( )

T = 85°C

A

T = 25°C

A

T = 150°C

T = 85°C

A

T = 25°C

A

T = -55°C

A

D

10

A

°

CE

V = 4.5VGS

AIN-S , D

DS(ON)

0.01 048121620

I , DRAIN-SOURCE CURRENT

D

V = 10VGS

Fig. 3 Typical On-Resistance vs. Drain Curr ent and G at e Vol tage

1.6

V=V

10

GS

I= 10A

D

1.4

E

V = 4.5V

1.2

GS

I= 5A

AIN-S , D

1.0

DS(ON)

0.8

ON-RESISTANCE (NORMALIZED)

0.6 50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE ( C)

J

°

Fig. 5 On- Resistance Varia tion with Temperature

T = 125°C

0.04

CE

AIN-S

0.02

A

, D

DS(ON)

0

04 8121620

I , DRAIN CURRENT

D

Fig. 4 Typical On-Resistance vs.

Drain Curr ent and Temperatur e

0.08

Ω

E ( ) A

0.06

D

ESIS

0.04

V = 4.5V

GS

I= 5A

0.02

V=V

, D

DS(ON)

0

- 50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)

J

GS

I = 10A

D

Fig. 6 On-Resistance Variation with Temperature

DMN3018SSS

Document number: DS35501 Rev. 5 - 2

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February 2012

OUR

CE CUR

REN

T

RAIN

GE CUR

REN

T

C

UNC

TIO

N CAPACITAN

C

F

G

TE THR

H

O

OLT

G

NEW PRODUCT

DMN3018SSS

2.4

20

2.0

I= 1mA

1.6

1.2

I = 250µA

D

15

(V)

T= 25°C

10

A

0.8

5

S

I, S

0.4

GS(th)

V , GATE THRESHOLD VOLTAGE (V)

0

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)

J

°

Fig. 7 Gate Thresh ol d Variation vs. Ambient Temperature

ADVANCE INFORMATION

10,000

0

0 0.2 0.4 0.6 0.8 1.0 1.2

V , SOURCE-DRAIN VOLTAGE (V)

SD

Fig.8 Diode Forwar d Voltage vs. Curr ent

1,000

)

C

iss

(nA)

1,000

T = 150°C

A

T = 125°C

A

100

T = 85°C

LEAKA

A

10

T = 25°C

A

DSS

I, D

1

0 5 10 15 20 25 30

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 9 Typical Drain-Source Leakage Current vs. Voltage

10

V = 15V, I = A

9

8

DS D

E (V) A

6

LD V

ES

4

E (p

C

oss

100

C

rss

, J

T

f = 1MHz

10

0 5 10 15 20

V , DRAIN-SOURC E VO LTAGE ( V)

DS

Fig. 10 Typical Junction Capacitance

A

2

GS

V

0

02 4 6 810121416

, TOTAL GATE CHARGE

Q (nC)

g

Fig. 11 Gate Charge

DMN3018SSS

Document number: DS35501 Rev. 5 - 2

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February 2012

T

R

T T

HER

R

TANC

NEW PRODUCT

ADVANCE INFORMATION

1

D = 0.9 D = 0.7

E

D = 0.5 D = 0.3

ESIS

0.1

D = 0.1

MAL

D = 0.05

D = 0.02

0.01

D = 0.01

ANSIEN

D = 0.005

r(t),

D = Single Pulse

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000

Package Outline Dimensions

e

b

D

Suggested Pad Layout

E1

A2

DMN3018SSS

R = r * R

θ

JA(t) (t)

R = 72C/W

JA

Duty Cycle, D = t1/t2

t1, PULSE DURATION TIME (sec)

Fig. 12 Transient Thermal Resistance

Dim Min Max

E

A1

Detail ‘A’

h

°

45

A3

A

X

0.254

Gauge Plane

L

Seating Plane

7°~9

°

Detail ‘A’

A - 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25

b 0.3 0.5

D 4.85 4.95

E 5.90 6.10 E1 3.85 3.95

e 1.27 Typ

h - 0.35

L 0.62 0.82

θ

All Dimensions in mm

θθJA

°

SO-8

0° 8°

Dimensions Value (in mm)

X 0.60

C1

C2

Y

DMN3018SSS

Document number: DS35501 Rev. 5 - 2

5 of 6

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Y 1.55 C1 5.4 C2 1.27

February 2012

NEW PRODUCT

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document o r products described herein in such applica tions shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

ADVANCE INFORMATION

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

www.diodes.com

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

IMPORTANT NOTICE

LIFE SUPPORT

DMN3018SSS

Document number: DS35501 Rev. 5 - 2

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February 2012