Diodes DMN3018SSD User Manual

NEW PRODUCT

Product Summary

max

I

V

R

(BR)DSS

30V

30m @ VGS = 4.5V

DS(ON)

22m @ V

max

= 10V

GS

D

TA = +25°C

6.7A

5.2A

Description

This MOSFET has been designed to minimize the on-state resistance

) and yet maintain superior switching performance, making it

(R

DS(ON)

ideal for high efficiency power management applications.

Applications

• Backlighting

• Power Management Functions

• DC-DC Converters

ADVANCE INFORMATION

ESD PROTECTED

SO-8

Top View

DMN3018SSD

30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features

• Low On-Resistance

• 100% UIS (Avalanche) Rated

• ESD Protected Gate

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SO-8

• Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections Indicator: See diagram

• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.

Source

Body
Diode

S2

G2

S1

G1

Pin Configuration

Solderable per MIL-STD-202, Method 208

• Weight: 0.008 grams (approximate)

D2

D2

D1

D1

Gate

Equivalent Circuit per ElementTop View

Gate

Protection

Diode

Drain

Ordering Information (Note 4)

Part Number Case Packaging

DMN3018SSD-13 SO-8 2500/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

DMN3018SSD

Document number: DS35583 Rev. 3 - 2

Top View

8 5

N3018SD

YY

WW

1 4

1 of 6

www.diodes.com

Logo

Part no.

Xth week: 01 ~ 53
Year: “11” = 2011

January 2013

© Diodes Incorporated

)

g

g

g

)

r

)

r

r

NEW PRODUCT

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = 10V

Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Maximum Body Diode continuous Current
Avalanche Current (Note 6) L = 0.1mH
Repetitive Avalanche Energy (Note 6) L = 0.1mH

Thermal Characteristics (@T

Total Power Dissipation (Note 5)

ADVANCE INFORMATION

Thermal Resistance, Junction to Ambient (Note 5)

Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range

DMN3018SSD

V

DSS

V

GSS

= +25°C

Steady

State

t < 10s

= +25°C, unless otherwise specified.)

A

T

A

T

= +70°C

A

= +25°C

T

A

T

= +70°C

A

I

D

I

D

I

DM

I

S

I

AR

E

AR

Characteristic Symbol Value Units

P

Steady state

t < 10s 50 °C/W

R

R

T

J, TSTG

D

JA

JC

30 V

±20 V

6.7

5.3

8.7

6.9

A

A

60 A

2.0 A
19 A
18 mJ

1.5 W
83 °C/W

14.5 °C/W

-55 to +150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I
I

GSS

DSS

DSS

30 — — V
— — 1 A
— — ±10 A

VGS = 0V, ID = 250A
VDS = 24V, VGS = 0V

VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y
V

SD

|

fs

1 1.7 2.1 V
— 16 22
— 23 30
— 8.3 — S

0.5 — 1.2 V

VDS = VGS, ID = 250A
V

= 10V, ID = 10A

m

GS

V

= 4.5V, ID = 6A

GS

VDS = 5V, ID = 6.9A

VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance

C

iss

C

oss

C

rss

R
Total Gate Charge (VGS = 4.5V) Qg
Total Gate Charge (VGS = 10V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

6. I

and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C

AR

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

t

t

Q
Q

D(on

t

D(off

t

t

r

Q

s

d

f

r

— 697 —
— 97 —
— 67 —
— 1.47 — 
— 6.0 —
— 13.2 —
— 2.2 —
— 1.8 —
— 4.3 —
— 4.4 —
— 20.1 —
— 4.1 —
— 7.3 — ns
— 7.9 — nC

= 15V, VGS = 0V,

V

pF

DS

f = 1.0MHz

VDS = 0V, VGS = 0V, f = 1.0MHz

= 10V, VDS = 15V,

V

nC

ns

GS

= 9A

I

D

V

= 15V, VGS = 10V,

DD

R

= 15, ID = 1A, RG = 6

L

= 9A, di/dt = 500A/s

I

F

DMN3018SSD

Document number: DS35583 Rev. 3 - 2

2 of 6

www.diodes.com

January 2013

© Diodes Incorporated