Diodes DMN3018SFG User Manual

Product Summary

I

max

D

8.5A

6.6A

V

(BR)DSS

30V

R

21m @ V

35m @ VGS = 4.5V

DS(ON)

max

= 10V

GS

TA = +25°C

Description

This MOSFET has been designed to minimize the on-state resistance

(R

) and yet maintain superior switching performance, making it

DS(ON)

ideal for high efficiency power management applications.

Applications

• Backlighting

• Power Management Functions

• DC-DC Converters

NEW PRODUCT

ESD PROTECTED

D

D

D

D

Bottom View

Pin 1

S

S

S

G

DMN3018SFG

30V N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

• Low R

• Small form factor thermally efficient package enables higher

density end products

• Occupies just 33% of the board area occupied by SO-8 enabling

smaller end product

• ESD Protected Gate

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 standards for High Reliability

– ensures on state losses are minimized

DS(ON)

Mechanical Data

• Case: POWERDI®3333-8

• Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections Indicator: See diagram

• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe

Solderable per MIL-STD-202, Method 208

• Weight: 0.072 grams (approximate)

e3

D

G

Top View

Gate Protect ion

Diode

Top View

Internal Schematic

S

Ordering Information (Note 4)

Part Number Case Packaging

DMN3018SFG-7 POWERDI®3333-8 2000/Tape & Reel

DMN3018SFG-13 POWERDI®3333-8 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

DMN3018SFG

Document number: DS35638 Rev. 4 - 2

YYWW

N38

N38 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last digit of year (ex: 11 = 2011)
WW = Week code (01 ~ 53)

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April 2014

© Diodes Incorporated

θ

)

g

g

g

)

r

)

r

r

DMN3018SFG

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Steady

Continuous Drain Current (Note 6) VGS = 10V

State

t<10s

Steady

Continuous Drain Current (Note 6) VGS = 4.5V

State

t<10s

Maximum Continuous Body Diode Forward Current (Note 4)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Avalanche Current (Note 7) L = 0.1mH
Avalanche Energy (Note 7) L = 0.1mH

= +25°C

T

A

T

= +70°C

A

= +25°C

T

A

= +70°C

T

A

= +25°C

T

A

T

= +70°C

A

T

= +25°C

A

= +70°C

T

A

V

DSS

V

GSS

I

D

I

D

I

D

I

D

I

S

I

DM

I

AS

E

AS

30 V

±25 V

8.5

6.8

11.3

9.1

6.6

5.3

8.7

7.0

A

A

A

A

2.5 A
60 A
18 A
16 mJ

Thermal Characteristics

NEW PRODUCT

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6)

Thermal Resistance, Junction to Case
Operating and Storage Temperature Range

Electrical Characteristics (@T

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

Static Drain-Source On-Resistance

DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge (VGS = 4.5V) Qg
Total Gate Charge (VGS = 10V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge

Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate

7. I

and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C

AS

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

DMN3018SFG

Document number: DS35638 Rev. 4 - 2

Characteristic Symbol Min Typ Max Unit Test Condition

Diode Forward Voltage

Characteristic Symbol Value Units

1.0 W

126

°C/W

2.2 W
56

°C/W

7.0

-55 to 150 °C

VGS = 0V, ID = 250A
VDS = 24V, VGS = 0V
VGS = ±20V, VDS = 0V

VDS = VGS, ID = 250A
V

= 10V, ID = 10A

m

GS

V

= 4.5V, ID = 8.5A

GS

VGS = 0V, IS = 1A

V

= 15V, VGS = 0V,

DS

f = 1.0MHz

VDS = 0V, VGS = 0V,f = 1.0MHz

Steady State

t<10s 71

Steady State

t<10s 31

= +25°C, unless otherwise specified.)

A

BV

I
I

GSS

V

GS(th

R

DS(ON)

V

C
C
C

R

DSS

DSS

SD

iss

oss

rss

30 — — V
— — 1 A
— — ±10 A

1 1.7 2.1 V
— 16 21
— 21 35

0.5 — 1.2 V

— 697 — pF
— 97 — pF
— 67 — pF
— 1.47 — 

P

R

θ

P

R

θ

R

T

J,TSTG

D

JA

D

JA

JC

— 6.0 — nC
— 13.2 — nC
— 2.2 — nC

s

— 1.8 — nC

d

— 4.3 — ns
— 4.4 — ns
— 20.1 — ns
— 4.1 — ns
— 7.3 — ns
— 7.9 — nC

t

t

Q
Q

D(on

t

D(off

t

T

Q

f

r

r

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V

= 10V, VDS = 15V,

GS

I

= 9A

D

V

= 15V, VGS = 10V,

DD

R

= 15,ID = 1A, RG = 6

L

= 9A, di/dt = 500A/µs

I

F

© Diodes Incorporated

April 2014