Diodes DMN3016LFDE User Manual

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Page 1

NEW PRODUCT

Product Summary

(BR)DSS

30V

16m @ VGS = 4.5V

DS(ON)

12m @ V

max

= 10V

TA = +25°C

Description and Applications

This MOSFET has been designed to minimize the on-state resistance

) and yet maintain superior switching performance, making it

DS(on)

ideal for high efficiency power management applications.

 Battery Management Application  Power Management Functions  DC-DC Converters

ADVANCE INFORMATION

U-DFN2020-6

Type E

Bottom View

10A

8.5A

max

SSG34

Pin Out

DMN3016LFDE

N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

 0.6mm profile – ideal for low profile applications  PCB footprint of 4mm  Low Gate Threshold Voltage  Low On-Resistance



Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)



Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: U-DFN2020-6 Type E  Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Finish – NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

 Weight: 0.0065 grams (approximate)

DD1

Internal Schematic

Ordering Information

Part Number Case Packaging

DMN3016LFDE-7 U-DFN2020-6 Type E 3,000/Tape & Reel

DMN3016LFDE-13 U-DFN2020-6 Type E 10,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

(Note 4)

Marking Information

Date Code Key

Year 2011 2012 2013 2014 2015 2016 2017

Code Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DMN3016LFDE

Document number: DS35900 Rev. 2 - 2

www.diodes.com

NR = Product Type Marking Code YM = Date Code Marking Y = Year (ex: Y = 2011) M = Month (ex: 9 = September)

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September 2013

Page 2



)

NEW PRODUCT

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Value Units

Drain-Source Voltage Gate-Source Voltage

= +25°C

= +70°C

= +25°C

= +70°C

Continuous Drain Current (Note 6) VGS = 10V

Steady

State

t<10s

Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Drain Current (10s pulse, duty cycle = 1%) Avalanche Current (Note 7) L = 0.1mH Repetitive Avalanche Energy (Note 7) L = 0.1mH

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

Total Power Dissipation (Note 6)

ADVANCE INFORMATION

Thermal Resistance, Junction to Ambient (Note 6)

Thermal Resistance, Junction to Case (Note 6) Steady state Operating and Storage Temperature Range

DMN3016LFDE

DSS

GSS

= +25°C

TA = +70°C

Steady state

t<10s 121

= +25°C

TA = +70°C

Steady state

t<10s 42

J, TSTG



30 V

±20 V

2.5 A 90 A 22 A 24 mJ

0.73

0.47 171

2.02

1.30

9.3

-55 to +150 °C

°C/W

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage

I I

GSS

DSS

30 - - V

- - 1 A

- - ±100 nA

VGS = 0V, ID = 250A VDS = 30V, VGS = 0V

VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance Diode Forward Voltage

GS(th

DS (ON)

|Y V

1.4 - 2.0 V

- 8 12

- 12 16

- 32 - S

- 0.70 1.0 V

VDS = VGS, ID = 250A

= 10V, ID = 11A

mΩ

= 4.5V, ID = 9A

VDS = 5V, ID = 12A

VGS = 0V, IS = 1A DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate resistance

iss

oss

rss

R Total Gate Charge (VGS = 4.5V) Qg Total Gate Charge (VGS = 10V) Qg Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. I

and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

Q Q

D(on

D(off

- 1415 -

- 119 -

- 82 -

- 2.6 3.2 

- 11.3 -

- 25.1 -

- 3.5 -

- 3.6 -

- 4.8 -

- 16.5 -

- 26.1 -

- 5.6 -

- 12.3 - ns

- 10.4 - nC

= 15V, VGS = 0V,

f = 1.0MHz

VDS = 0V, VGS = 0V, f = 1.0MHz

= 15V, ID = 12A

= 15V, VGS = 10V,

= 1.25, RG = 3,

= 12A, di/dt = 500A/s

DMN3016LFDE

Document number: DS35900 Rev. 2 - 2

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September 2013

Page 3

RAIN CUR

RAIN

URR

R,DR

OUR

ON-R

OUR

ON-R

OUR

CE ON-R

TANC

NEW PRODUCT

DMN3016LFDE

V= 10V

(A)

V= 4.5V

V = 4.0VGS

V = 3.5VGS

V = 3.0VGS

I, D

0 0.5 1.0 1.5 2.0

V , DRAIN -SOURCE VOLTAGE(V)

V = 2.5VGS

Fig. 1 Typical Output Characteristics

0.04



V= 5.0V

(A)

01234

V , GATE-SOURCE VOLTAGE (V)

T = 150CA

T = 125CA

T = 85CA

T = 25CA

T = -55CA

Fig. 2 Typical Transfer Characteristics

0.04



V = 4.5VGS

ADVANCE INFORMATION

0.03

ESISTANCE( )

0.02

AIN-S

0.01

DS(ON)

0 5 10 15 20 25 30

I , DRAIN SOURCE CURRENT (A)

Fig. 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

0.03

ESISTANCE( )

AIN-S

0.02

0.01

T = 125 CA

T = 150 CA

, D

DS(ON)

0 5 10 15 20 25 30

I , DRAIN SOURCE CURRENT (A)

Fig. 4 Typical On-Resistance vs.

Drain Current and Temperature

T = 85CA

T = 25CA

T = -55CA



E ( )

ESIS

-S (NORMALIZED)

V=.5V

I=A

, D

DS(ON)

ON-RESISTANCE

AIN-S

, D

DS(ON)

V = 10V

I= A

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)



Fig. 5 On-Resistance Variation with Temperature

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)



Fig. 6 On-Resistance Variation with Temperature

DMN3016LFDE

Document number: DS35900 Rev. 2 - 2

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September 2013

Page 4

GATE THRESH

OUR

CE CUR

UNC

TION CAPACITANC

GAT

OUR

OLTAG

P, P

NEW PRODUCT

DMN3016LFDE

E(V)

A L

LD V

(A)

I, S

GS(TH)

-50-25 0 255075100125150 T , AMBIENT TEMPERATURE (°C)

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

2,000

1,800

)

ADVANCE INFORMATION

E (p

1,600

f = 1MHz

1,400

1,200

iss

1,000

0 0.2 0.4 0.6 0.8 1.0 1.2

V , SOURCE-DRAIN VOLTAGE (V)

Fig. 8 Diode Forward Voltage vs. Current

E (V)

f = 1MHz

E V

800

E-S

600

, J

400

200

0 5 10 15 20 25 30

V , DRAIN-SOURCE VOLTAGE (V)

oss

rss

Fig. 9 Typical Junction Capacitance

100

(W)

IWE

Single Pulse R = 61C/W



R = r * R



JA(t) (t) JA

T - T = P * R

JA JA(t)





0 5 10 15 20 25 30

Q , TOTAL GATE CHARGE (nC)

Fig. 10 Gate-Charge Characteristics

ANSIEN

EAK

(PK)

0.001 0.01 0.1 1 10 100 1,0000.0001 t1, PULSE DURATION TIME (sec)

Fig. 11 Single Pulse Maximum Power Dissipation

DMN3016LFDE

Document number: DS35900 Rev. 2 - 2

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September 2013

Page 5

T T

HER

TANC

DMN3016LFDE

D = 0.7

D = 0.5

D = 0.3

NEW PRODUCT

ESIS

0.1

D = 0.1

MAL

D = 0.05

D = 0.02

0.01

D = 0.01

ANSIEN

D = 0.005

r(t),

Single Pulse

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, PULSE DURATION TIMES (sec)

D = 0.9

R (t )=r(t) * R



JA JA

R =61°C/W



Duty Cycle, D=t1/ t2

Fig. 12 Transient Thermal Resistance

Package Outline Dimension

ADVANCE INFORMATION

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

L(2X)

Z(4X)

b(6X)

DMN3016LFDE

Document number: DS35900 Rev. 2 - 2

5 of 6

www.diodes.com

U-DFN2020-6

Type E

Dim Min Max Typ

A 0.57 0.63 0.60

A1 0 0.05 0.03 A3

 

0.15

b 0.25 0.35 0.30

b1 0.185 0.285 0.235

D 1.95 2.05 2.00

D2 0.85 1.05 0.95

E 1.95 2.05 2.00

E2 1.40 1.60 1.50

 

0.65

L 0.25 0.35 0.30

L1 0.82 0.92 0.87

K1 K2

     

0.305

0.225

0.20

All Dimensions in mm

September 2013

Page 6

NEW PRODUCT

DMN3016LFDE

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

ADVANCE INFORMATION

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated.

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

www.diodes.com

DMN3016LFDE

Document number: DS35900 Rev. 2 - 2

Dimensions

C 0.650 X 0.400

X1 0.285

X (6x)

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

Y (2x)

IMPORTANT NOTICE

LIFE SUPPORT

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X2 1.050

Y 0.500 Y1 0.920 Y2 1.600 Y3 2.300

Value

(in mm)

September 2013