Diodes DMN3016LFDE User Manual

Page 1
NEW PRODUCT
Product Summary
V
R
(BR)DSS
30V
16m @ VGS = 4.5V
DS(ON)
12m @ V
max
= 10V
GS
TA = +25°C
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
) and yet maintain superior switching performance, making it
(R
DS(on)
ideal for high efficiency power management applications.
Battery Management Application  Power Management Functions  DC-DC Converters
ADVANCE INFORMATION
U-DFN2020-6
Type E
Bottom View
I
D
10A
8.5A
max
D
6
D
5
SSG34
Pin Out
N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
0.6mm profile – ideal for low profile applications  PCB footprint of 4mm  Low Gate Threshold Voltage  Low On-Resistance
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
2
Mechanical Data
Case: U-DFN2020-6 Type E  Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.0065 grams (approximate)
D
DD1
2
G
S
Internal Schematic
Ordering Information
Part Number Case Packaging
DMN3016LFDE-7 U-DFN2020-6 Type E 3,000/Tape & Reel
DMN3016LFDE-13 U-DFN2020-6 Type E 10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
(Note 4)
Marking Information
Date Code Key
Year 2011 2012 2013 2014 2015 2016 2017
Code Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
DMN3016LFDE
Document number: DS35900 Rev. 2 - 2
www.diodes.com
NR = Product Type Marking Code YM = Date Code Marking Y = Year (ex: Y = 2011) M = Month (ex: 9 = September)
1 of 6
September 2013
© Diodes Incorporated
Page 2
)
g
g
g
)
r
)
r
r
NEW PRODUCT
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage Gate-Source Voltage
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
T
= +70°C
A
Continuous Drain Current (Note 6) VGS = 10V
Steady
State
t<10s
Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Drain Current (10s pulse, duty cycle = 1%) Avalanche Current (Note 7) L = 0.1mH Repetitive Avalanche Energy (Note 7) L = 0.1mH
Thermal Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
ADVANCE INFORMATION
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6) Steady state Operating and Storage Temperature Range
DMN3016LFDE
V
DSS
V
GSS
I
D
I
D
I
S
I
DM
I
AR
E
AR
= +25°C
T
A
TA = +70°C
Steady state
t<10s 121
= +25°C
T
A
TA = +70°C
Steady state
t<10s 42
P
R
P
R
R
T
J, TSTG
D
JA
D
JA
JC
30 V
±20 V
10
8
12
9
A
A
2.5 A 90 A 22 A 24 mJ
0.73
0.47 171
2.02
1.30
62
9.3
-55 to +150 °C
W
°C/W
W
°C/W
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage
BV
I I
GSS
DSS
DSS
30 - - V
- - 1 A
- - ±100 nA
VGS = 0V, ID = 250A VDS = 30V, VGS = 0V
VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance Diode Forward Voltage
V
GS(th
R
DS (ON)
|Y V
fs
SD
1.4 - 2.0 V
- 8 12
- 12 16
|
- 32 - S
- 0.70 1.0 V
VDS = VGS, ID = 250A
V
= 10V, ID = 11A
mΩ
GS
V
= 4.5V, ID = 9A
GS
VDS = 5V, ID = 12A
VGS = 0V, IS = 1A DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate resistance
C
iss
C
oss
C
rss
R Total Gate Charge (VGS = 4.5V) Qg Total Gate Charge (VGS = 10V) Qg Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. I
and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C
AR
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
t
t
Q Q
D(on
t
D(off
t
t
r
Q
s
d
f
r
- 1415 -
- 119 -
- 82 -
- 2.6 3.2
- 11.3 -
- 25.1 -
- 3.5 -
- 3.6 -
- 4.8 -
- 16.5 -
- 26.1 -
- 5.6 -
- 12.3 - ns
- 10.4 - nC
= 15V, VGS = 0V,
V
pF
DS
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz
nC
V
= 15V, ID = 12A
DS
= 15V, VGS = 10V,
V
ns
DD
= 1.25, RG = 3,
R
L
= 12A, di/dt = 500A/s
I
F
DMN3016LFDE
Document number: DS35900 Rev. 2 - 2
2 of 6
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September 2013
© Diodes Incorporated
Page 3
RAIN CUR
R
N
T
D
RAIN
C
URR
N
T
R,DR
OUR
ON-R
R
R
OUR
ON-R
R
R
N
OUR
C
R
R
OUR
CE ON-R
TANC
NEW PRODUCT
DMN3016LFDE
30
V= 10V
25
(A)
20
E
V= 4.5V
V = 4.0VGS
V = 3.5VGS
GS
GS
V = 3.0VGS
15
10
D
I, D
5
0
0 0.5 1.0 1.5 2.0
V , DRAIN -SOURCE VOLTAGE(V)
DS
V = 2.5VGS
Fig. 1 Typical Output Characteristics
0.04
30
V= 5.0V
25
(A)
20
DS
E
15
10
D
I,
5
0
01234
V , GATE-SOURCE VOLTAGE (V)
GS
T = 150CA
T = 125CA
T = 85CA
T = 25CA
T = -55CA
Fig. 2 Typical Transfer Characteristics
0.04
V = 4.5VGS
ADVANCE INFORMATION
0.03
ESISTANCE( )
0.02
CE
AIN-S
0.01
DS(ON)
0
0 5 10 15 20 25 30
I , DRAIN SOURCE CURRENT (A)
D
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
0.03
ESISTANCE( )
CE
AIN-S
0.02
0.01
T = 125 CA
T = 150 CA
, D
DS(ON)
0
0 5 10 15 20 25 30
I , DRAIN SOURCE CURRENT (A)
D
Fig. 4 Typical On-Resistance vs.
Drain Current and Temperature
T = 85CA
T = 25CA
T = -55CA
E ( )
E
ESIS
-S (NORMALIZED)
V=.5V
4
GS
I=A
5
D
AI
, D
DS(ON)
ON-RESISTANCE
AIN-S
, D
DS(ON)
V = 10V
GS
I= A
10
D
-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)
J
Fig. 5 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)
J
Fig. 6 On-Resistance Variation with Temperature
DMN3016LFDE
Document number: DS35900 Rev. 2 - 2
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September 2013
© Diodes Incorporated
Page 4
GATE THRESH
O
O
T
G
OUR
CE CUR
R
T
C
UNC
TION CAPACITANC
F
GAT
OUR
C
OLTAG
P, P
T
R
T
P
O
R
NEW PRODUCT
DMN3016LFDE
30
E(V)
25
A L
LD V
(A)
EN
20
15
10
S
I, S
5
GS(TH)
V,
0
-50-25 0 255075100125150 T , AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
A
2,000
1,800
)
ADVANCE INFORMATION
E (p
1,600
f = 1MHz
1,400
1,200
C
iss
1,000
0 0.2 0.4 0.6 0.8 1.0 1.2
V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 8 Diode Forward Voltage vs. Current
10
9
8
E (V)
f = 1MHz
7
6
E V
5
800
4
E-S
600
, J
400
T
C
200
0
0 5 10 15 20 25 30
V , DRAIN-SOURCE VOLTAGE (V)
DS
oss
C
rss
Fig. 9 Typical Junction Capacitance
100
90
(W)
80
70
IWE
60
Single Pulse R = 61C/W
JA
R = r * R

JA(t) (t) JA
T - T = P * R
JA JA(t)
3
2
GS
V,
1
0
0 5 10 15 20 25 30
Q , TOTAL GATE CHARGE (nC)
g
Fig. 10 Gate-Charge Characteristics
50
ANSIEN
40
30
EAK
20
(PK)
10
0
0.001 0.01 0.1 1 10 100 1,0000.0001 t1, PULSE DURATION TIME (sec)
Fig. 11 Single Pulse Maximum Power Dissipation
DMN3016LFDE
Document number: DS35900 Rev. 2 - 2
4 of 6
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September 2013
© Diodes Incorporated
Page 5
T
R
T T
HER
R
TANC
DMN3016LFDE
1
D = 0.7
E
D = 0.5
D = 0.3
NEW PRODUCT
ESIS
0.1
D = 0.1
MAL
D = 0.05
D = 0.02
0.01
D = 0.01
ANSIEN
D = 0.005
r(t),
Single Pulse
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, PULSE DURATION TIMES (sec)
D = 0.9
R (t )=r(t) * R

JA JA
R =61°C/W
JA
Duty Cycle, D=t1/ t2
Fig. 12 Transient Thermal Resistance
Package Outline Dimension
ADVANCE INFORMATION
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A
A1
A3
D
E
E2
D2
L1
b1
K1
L(2X)
K2
Z(4X)
e
b(6X)
DMN3016LFDE
Document number: DS35900 Rev. 2 - 2
5 of 6
www.diodes.com
U-DFN2020-6
Type E
Dim Min Max Typ
A 0.57 0.63 0.60
A1 0 0.05 0.03 A3
 
0.15
b 0.25 0.35 0.30
b1 0.185 0.285 0.235
D 1.95 2.05 2.00
D2 0.85 1.05 0.95
E 1.95 2.05 2.00
E2 1.40 1.60 1.50
e
 
0.65
L 0.25 0.35 0.30
L1 0.82 0.92 0.87
K1 K2
Z
     
0.305
0.225
0.20
All Dimensions in mm
September 2013
© Diodes Incorporated
Page 6
NEW PRODUCT
DMN3016LFDE
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
ADVANCE INFORMATION
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated.
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
www.diodes.com
DMN3016LFDE
Document number: DS35900 Rev. 2 - 2
Dimensions
C 0.650 X 0.400
X1 0.285
Y3
Y2
X (6x)
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
X2
C
Y1
X1
Y (2x)
IMPORTANT NOTICE
LIFE SUPPORT
6 of 6
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X2 1.050
Y 0.500 Y1 0.920 Y2 1.600 Y3 2.300
Value
(in mm)
September 2013
© Diodes Incorporated
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