Diodes DMN3016LFDE User Manual

NEW PRODUCT

Product Summary

V

R

(BR)DSS

30V

16m @ VGS = 4.5V

DS(ON)

12m @ V

max

= 10V

GS

TA = +25°C

Description and Applications

This MOSFET has been designed to minimize the on-state resistance

) and yet maintain superior switching performance, making it

(R

DS(on)

ideal for high efficiency power management applications.

 Battery Management Application
 Power Management Functions
 DC-DC Converters

ADVANCE INFORMATION

U-DFN2020-6

Type E

Bottom View

I

D

10A

8.5A

max

D

6

D

5

SSG34

Pin Out

DMN3016LFDE

N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

 0.6mm profile – ideal for low profile applications
 PCB footprint of 4mm
 Low Gate Threshold Voltage
 Low On-Resistance



Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)



Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

2

Mechanical Data

 Case: U-DFN2020-6 Type E
 Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020
 Terminals: Finish – NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

 Weight: 0.0065 grams (approximate)

D

DD1

2

G

S

Internal Schematic

Ordering Information

Part Number Case Packaging

DMN3016LFDE-7 U-DFN2020-6 Type E 3,000/Tape & Reel

DMN3016LFDE-13 U-DFN2020-6 Type E 10,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

(Note 4)

Marking Information

Date Code Key

Year 2011 2012 2013 2014 2015 2016 2017

Code Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DMN3016LFDE

Document number: DS35900 Rev. 2 - 2

www.diodes.com

NR = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)

1 of 6

September 2013

© Diodes Incorporated



)

g

g

g

)

r

)

r

r

NEW PRODUCT

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

= +25°C

T

A

= +70°C

T

A

= +25°C

T

A

T

= +70°C

A

Continuous Drain Current (Note 6) VGS = 10V

Steady

State

t<10s

Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10s pulse, duty cycle = 1%)
Avalanche Current (Note 7) L = 0.1mH
Repetitive Avalanche Energy (Note 7) L = 0.1mH

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

Total Power Dissipation (Note 6)

ADVANCE INFORMATION

Thermal Resistance, Junction to Ambient (Note 6)

Thermal Resistance, Junction to Case (Note 6) Steady state
Operating and Storage Temperature Range

DMN3016LFDE

V

DSS

V

GSS

I

D

I

D

I

S

I

DM

I

AR

E

AR

= +25°C

T

A

TA = +70°C

Steady state

t<10s 121

= +25°C

T

A

TA = +70°C

Steady state

t<10s 42

P

R

P

R

R

T

J, TSTG

D

JA



D

JA



JC

30 V

±20 V

10

8

12

9

A

A

2.5 A
90 A
22 A
24 mJ

0.73

0.47
171

2.02

1.30

62

9.3

-55 to +150 °C

W

°C/W

W

°C/W

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I
I

GSS

DSS

DSS

30 - - V

- - 1 A

- - ±100 nA

VGS = 0V, ID = 250A
VDS = 30V, VGS = 0V

VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y
V

fs

SD

1.4 - 2.0 V

- 8 12

- 12 16

|

- 32 - S

- 0.70 1.0 V

VDS = VGS, ID = 250A

V

= 10V, ID = 11A

mΩ

GS

V

= 4.5V, ID = 9A

GS

VDS = 5V, ID = 12A

VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance

C

iss

C

oss

C

rss

R
Total Gate Charge (VGS = 4.5V) Qg
Total Gate Charge (VGS = 10V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. I

and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C

AR

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

t

t

Q
Q

D(on

t

D(off

t

t

r

Q

s

d

f

r

- 1415 -

- 119 -

- 82 -

- 2.6 3.2 

- 11.3 -

- 25.1 -

- 3.5 -

- 3.6 -

- 4.8 -

- 16.5 -

- 26.1 -

- 5.6 -

- 12.3 - ns

- 10.4 - nC

= 15V, VGS = 0V,

V

pF

DS

f = 1.0MHz

VDS = 0V, VGS = 0V, f = 1.0MHz

nC

V

= 15V, ID = 12A

DS

= 15V, VGS = 10V,

V

ns

DD

= 1.25, RG = 3,

R

L

= 12A, di/dt = 500A/s

I

F

DMN3016LFDE

Document number: DS35900 Rev. 2 - 2

2 of 6

www.diodes.com

September 2013

© Diodes Incorporated