Diodes DMN3010LSS User Manual
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Features
• Low On-Resistance
• 9mΩ @ V
• 13mΩ @ V
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 2)
• "Green" Device (Note 4)
• Qualified to AEC-Q101 Standards for High Reliability
= 10V
GS
GS
= 4.5V
NEW PRODUCT
Maximum Ratings @T
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1) Steady
State
Pulsed Drain Current (Note 3)
= 25°C unless otherwise specified
A
Characteristic Symbol Value Units
TOP VIEW
T
= 25°C
A
T
= 70°C
A
DMN3010LSS
SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET
Mechanical Data
• Case: SOP-8L
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals Connections: See Diagram
• Terminals: Finish - Matte Tin annealed over Copper lead
frame. Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.072g (approximate)
SOP-8L
S
S
S
G
Internal Schematic
V
DSS
V
GSS
I
D
I
DM
TOP VIEW
D
D
D
D
30 V
±20
16
13
64 A
V
A
Thermal Characteristics
Characteristic Symbol Value Unit
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Notes: 1. Device mounted on 2 oz. Copper pads on FR-4 PCB, with R
DMN3010LSS
Document number: DS31259 Rev. 6 - 2
2. No purposefully added lead.
3. Pulse width ≤10μS, Duty Cycle ≤1%.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
= 50°C
JA
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P
R
T
J, TSTG
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JA
2.5 W
50 °C/W
-55 to +150 °C
November 2008
© Diodes Incorporated
)
g
g
)
r
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OUR
CE CUR
RENT
DMN3010LSS
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV
DSS
I
⎯ ⎯
DSS
I
⎯ ⎯
GSS
30
⎯ ⎯
1
±100
V
μA
nA
V
= 0V, ID = 250μA
GS
= 30V, VGS = 0V
V
DS
V
= ±20V, VDS = 0V
GS
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage (Note 5)
V
GS(th
R
DS (ON)
g
⎯
fs
V
SD
⎯
1.1
0.5
⎯
⎯
⎯
16
⎯
2.0 V
9
13
⎯
1.2 V
V
V
mΩ
V
S
V
VGS = 0V, IS = 16A
= VGS, ID = 250μA
DS
= 10V, ID = 16A
GS
= 4.5V, ID = 10A
GS
= 10V, ID = 12A
DS
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
NEW PRODUCT
Gate Resistance
C
⎯
iss
C
⎯
oss
C
⎯
rss
R
⎯
G
2096
329
258
1.2
⎯
⎯
⎯
pF
pF
pF
= 15V, VGS = 0V
V
DS
f = 1.0MHz
⎯ Ω VGS = 0V, f = 1MHz
SWITCHING CHARACTERISTICS
= 15V, VGS = 4.5V, ID = 16A
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Notes: 5. Short duration pulse test used to minimize self-heating effect.
Q
⎯
g
Q
s
Q
⎯
d
t
⎯
d(on
t
⎯
t
⎯
d(off
t
⎯
f
⎯
22.4
43.7
5.5
12.6
7.11
10.3
58.3
32.1
⎯
⎯
⎯ VDS = 15V, VGS = 10V, ID = 16A
⎯
⎯
⎯
⎯
V
DS
= 15V, VGS = 10.0V, ID = 16A
V
nC
ns
DS
VDS = 15V, VGS = 10V, ID = 16A
= 10V, VDS = 15V,
V
GS
R
= 15Ω, RG = 6Ω
D
20
V = 4.5V
18
V = 10V
GS
GS
16
14
V = 3.0V
GS
12
10
8
6
D
I , DRAIN CURRENT (A)
4
2
V = 1.5V
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
V , DRAIN-SOURCE VOLTAGE (V)
DS
GS
V = 2.5V
Fig. 1 Typical Output Ch ar acterist ic s
20
18
16
(A)
14
12
T = 150°C
10
8
6
S
I, S
4
GS
2
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
V , SOURCE-DRAIN VOLTAGE (V)
SD
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
Fig. 2 Source Current vs. Source-Drain Voltage
DMN3010LSS
Document number: DS31259 Rev. 6 - 2
2 of 5
www.diodes.com
November 2008
© Diodes Incorporated
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