Diodes DMN3010LSS User Manual

θ

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Features

• Low On-Resistance

• 9mΩ @ V

• 13mΩ @ V

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Lead Free By Design/RoHS Compliant (Note 2)

• "Green" Device (Note 4)

• Qualified to AEC-Q101 Standards for High Reliability

= 10V

GS

GS

= 4.5V

NEW PRODUCT

Maximum Ratings @T

Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1) Steady

State
Pulsed Drain Current (Note 3)

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

TOP VIEW

T

= 25°C

A

T

= 70°C

A

DMN3010LSS

SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET

Mechanical Data

• Case: SOP-8L

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020D

• Terminals Connections: See Diagram

• Terminals: Finish - Matte Tin annealed over Copper lead

frame. Solderable per MIL-STD-202, Method 208

• Marking Information: See Page 4

• Ordering Information: See Page 4

• Weight: 0.072g (approximate)

SOP-8L

S

S
S
G

Internal Schematic

V

DSS

V

GSS

I

D

I

DM

TOP VIEW

D

D
D
D

30 V

±20

16
13

64 A

V
A

Thermal Characteristics

Characteristic Symbol Value Unit

Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient

Operating and Storage Temperature Range

Notes: 1. Device mounted on 2 oz. Copper pads on FR-4 PCB, with R

DMN3010LSS

Document number: DS31259 Rev. 6 - 2

2. No purposefully added lead.

3. Pulse width ≤10μS, Duty Cycle ≤1%.

4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

= 50°C

JA

θ

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P

R

T

J, TSTG

D
JA

2.5 W
50 °C/W

-55 to +150 °C

November 2008

© Diodes Incorporated

)

g

g

)

r

)

OUR

CE CUR

RENT

DMN3010LSS

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

DSS

I

⎯ ⎯

DSS

I

⎯ ⎯

GSS

30

⎯ ⎯

1

±100

V
μA
nA

V

= 0V, ID = 250μA

GS

= 30V, VGS = 0V

V

DS

V

= ±20V, VDS = 0V

GS

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance

Diode Forward Voltage (Note 5)

V

GS(th

R

DS (ON)

g

⎯

fs

V

SD

⎯

1.1

0.5

⎯

⎯

⎯

16
⎯

2.0 V
9

13
⎯

1.2 V

V
V

mΩ

V

S

V
VGS = 0V, IS = 16A

= VGS, ID = 250μA

DS

= 10V, ID = 16A

GS

= 4.5V, ID = 10A

GS

= 10V, ID = 12A

DS

DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

NEW PRODUCT

Gate Resistance

C

⎯

iss

C

⎯

oss

C

⎯

rss

R

⎯

G

2096

329
258

1.2

⎯
⎯
⎯

pF
pF
pF

= 15V, VGS = 0V

V

DS

f = 1.0MHz

⎯ Ω VGS = 0V, f = 1MHz

SWITCHING CHARACTERISTICS

= 15V, VGS = 4.5V, ID = 16A

Total Gate Charge
Gate-Source Charge

Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time

Notes: 5. Short duration pulse test used to minimize self-heating effect.

Q

⎯

g

Q

s

Q

⎯

d

t

⎯

d(on

t

⎯

t

⎯

d(off

t

⎯

f

⎯

22.4

43.7

5.5

12.6

7.11

10.3

58.3

32.1

⎯

⎯

⎯ VDS = 15V, VGS = 10V, ID = 16A

⎯

⎯

⎯

⎯

V

DS

= 15V, VGS = 10.0V, ID = 16A

V

nC

ns

DS

VDS = 15V, VGS = 10V, ID = 16A

= 10V, VDS = 15V,

V

GS

R

= 15Ω, RG = 6Ω

D

20

V = 4.5V

18

V = 10V

GS

GS

16
14

V = 3.0V

GS

12
10

8
6

D

I , DRAIN CURRENT (A)

4
2

V = 1.5V

0

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

V , DRAIN-SOURCE VOLTAGE (V)

DS

GS

V = 2.5V

Fig. 1 Typical Output Ch ar acterist ic s

20
18

16

(A)

14
12

T = 150°C

10

8
6

S

I, S

4

GS

2
0

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1

V , SOURCE-DRAIN VOLTAGE (V)

SD

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

Fig. 2 Source Current vs. Source-Drain Voltage

DMN3010LSS

Document number: DS31259 Rev. 6 - 2

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November 2008

© Diodes Incorporated

R

TATIC DR

N

OUR

C

, GATE THRESH

O

OLTAG

)

OUR

C

CUR

REN

T

NEW PRODUCT

20

18

16

Ω

14

T = 150°C

A

T = 125°C

A

T = 85°C

A

12

T = 25°C

10

ON-RESISTA NCE (m )

DS(ON)

R , STATIC DRAIN-SOURCE

8

6

0246 8101214161820

I , DRAIN CURRENT (A)

D

A

T = -55°C

A

Fig. 3 Drai n- S ource On- Resistance vs. Drain Current

10,000

DMN3010LSS

1.6

1.5

E

1.4

1.3

-S

1.2

AI

1.1

1.0

, S

0.9

DS(ON)

0.8

ON-RESISTANCE (NORMALIZED)

0.7

0.6

-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)

A

Fig. 4 On-Resistance Variation with T emperature

2.5

V = 10V

GS

I = 16A

D

V = 4.5V

GS

I = 10A

D

C

1,000

100

C, CAPACITANCE (pF)

10

0 5 10 15 20 25 30

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 5 Typical Capacitance

iss

C

oss

C

rss

100

10

(A)

1

T = 150°C

E

0.01

S

I, S

0.001

0.1

T = 125°C

A

T = 85°C

A

A

T = 25°C

A

T = -55°C

A

E (V

2.2

1.9

LD V

I = 250µA

D

1.6

1.3

GS(TH)

V

1

-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)

A

Fig. 6 Gat e Threshold Variation vs. Ambien t Temperat ur e

0.0001
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1

V , SOURCE-DRAIN VOLTAGE (V)

SD

Fig. 7 Diode Forward Voltage vs. Current

DMN3010LSS

Document number: DS31259 Rev. 6 - 2

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November 2008

© Diodes Incorporated

T

R

T

T

HER

R

TANC

DMN3010LSS

1

D = 0.7

E

D = 0.5

D = 0.3

ESIS

0.1

D = 0.1

MAL

ANSIEN

D = 0.05

D = 0.02

0.01

D = 0.01

D = 0.005

D = Single Pulse

D = 0.9

R (t) = r(t) * R

θθ

JA JA

R = 88°C/W

θ

JA

P(pk)

t

1

t

2

T - T = P * R (t)

JA JA12θ

Duty Cycle, D = t /t

r(t),

NEW PRODUCT

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
t , PULSE DURATION TIME (s)

1

Fig. 8 Transient Therm al Respo nse

Ordering Information (Note 6)

Part Number Case Packaging

DMN3010LSS-13 SOP-8L 2500/Tap e & Reel

Notes: 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

Marking Information

Top View

8 5

N3010LS

WW

YY

1 4

Logo
Part no.

Xth week: 01~52
Year: "07" =2007

"08" =2008

Package Outline Dimensions

E1

E

A1

DETAIL A

L

0.254

GAUGE PLANE
SEATING PLANE

e

b

D

A2

A

A3

h

°

45

7°~9

°

DETAIL A

DMN3010LSS

Document number: DS31259 Rev. 6 - 2

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SOP-8L

Dim Min Max

A - 1.75
A1 0.08 0.25
A2 1.30 1.50
A3 0.20 Typ.

b 0.3 0.5

D 4.80 5.30

E 5.79 6.20

E1 3.70 4.10

e 1.27 Typ.

h - 0.35

L 0.38 1.27

0° 8°

θ

All Dimensions in mm

November 2008

© Diodes Incorporated

X

DMN3010LSS

Suggested Pad Layout

C

Y

NEW PRODUCT

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.

Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.

Z

IMPORTANT NOTICE

LIFE SUPPORT

Dimensions Value (in mm)

Z 5.1
C 1.27
X 0.41
Y 1.0

DMN3010LSS

Document number: DS31259 Rev. 6 - 2

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November 2008

© Diodes Incorporated