Diodes DMN3010LK3 User Manual

Product Summary

I

V

R

(BR)DSS

30V

9.5mΩ @ V

11.5mΩ @ VGS = 4.5V

DS(ON)

GS

= 10V

D

TC = +25°C

43A
39A

Description

This new generation MOSFET has been designed to minimize the on-

state resistance (R

performance, making it ideal for high efficiency power management

applications.

) and yet maintain superior switching

DS(on)

Applications

 Backlighting

 DC-DC Converters

 Power Management Functions

DMN3010LK3

Green

Features

 Low R

 Small form factor thermally efficient package enables higher

 Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

N-CHANNEL ENHANCEMENT MODE MOSFET

– ensures on state losses are minimized

DS(ON)

density end products

Mechanical Data

 Case: TO252-3L
 Case Material: Molded Plastic, “Green” Molding Compound.
 UL Flammability Classification Rating 94V-0
 Moisture Sensitivity: Level 1 per J-STD-020
 Terminal Connections: See Diagram
 Weight: 0.33 grams (approximate)

Top View

Pin Out Top View

Equivalent Circuit

Ordering Information (Note 4)

Part Number Case Packaging

DMN3010LK3-13 TO252 2500/Tape & Reel

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

DMN3010LK3

Document number: DS36762 Rev. 2 - 2



N3010L

YYWW

=Manufacturer’s Marking
N3010L = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Digit of Year (ex: 13 = 2013)
WW = Week Code (01 to 53)

1 of 6

www.diodes.com

April 2014

© Diodes Incorporated

)

g

g

g

)

r

)

r

r

DMN3010LK3

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 6) VGS = 10V

Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Avalanche Current (Notes 7) L = 0.1mH
Avalanche Energy (Notes 7) L = 0.1mH

Steady

State

Steady

State

T

= +25°C

C

= +70°C

T

C

= +25°C

T

A

T

= +70°C

A

V
V

I
I

E

DSS

GSS

I

D

I

D

DM

AR

AR

30 V

±20 V

43
34

13.1

10.5

A

A

90 A
28 A
40 mJ

Thermal Characteristics

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6)

Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range

Steady State

t<10s 31 °C/W

Steady State

t<10s 21 °C/W

P

R

P

R

R

T

J, TSTG

θJA

θJA

θJC

D

D

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

30 — — V
— — 1 μA

— — ±100 nA
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Diode Forward Voltage

V

R

DS(ON)

V

GS(th

SD

1.0 — 2.5 V
— 8 9.5
— 10 11.5
— 0.75 1.0 V

DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance

C

iss

C

oss

C

rss

R
Total Gate Charge (VGS = 4.5V) Qg
Total Gate Charge (VGS = 10V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. I

and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C

AS

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

DMN3010LK3

Document number: DS36762 Rev. 2 - 2

Q

s

Q

d

t

D(on

t

t

D(off

t

f

t

r

Q

r

www.diodes.com

— 2075 —
—
—
—
—
—
—
—
—
—
—
—
—
— 18.3 — nC

190
138

2.4

16.1
37

6.1

5.9

4.5

19.6
31

10.7

13.7

2 of 6

—
—
— Ω
—
—
—
—
—
—
—
—
— ns

1.6 W
78 °C/W

2.4 W
51 °C/W

4.7 °C/W

-55 to +150 °C

VGS = 0V, ID = 250μA
VDS = 30V, VGS = 0V
VGS = ±20V, VDS = 0V

VDS = VGS, ID = 250μA
V

= 10V, ID = 18A

mΩ

GS

V

= 4.5V, ID = 16A

GS

VGS = 0V, IS = 1A

= 15V, VGS = 0V,

V

pF

DS

f = 1.0MHz

VDS = 0V, VGS = 0V, f = 1.0MHz

nC

V

= 15V, ID = 18A

DS

V

= 15V, VGS = 10V,

ns

DS

R

= 0.83Ω, R

L

=15A, di/dt=500A/µs

I

F

GEN

© Diodes Incorporated

= 3Ω,

April 2014