Diodes DMN3010LFG User Manual

Product Summary

V

R

(BR)DSS

30V

10.5mΩ @ VGS = 4.5V

DS(ON)

8.5mΩ @ V

= 10V

GS

TA = +25°C

Description

This new generation MOSFET has been designed to minimize the on-

state resistance (R

performance, making it ideal for high efficiency power management

applications.

) and yet maintain superior switching

DS(ON)

Applications

• Backlighting

• DC-DC Converters

• Power Management Functions

NEW PRODUCT

POWERDI3333-8

Top View

I

D

30A

25A

D

D

D

DMN3010LFG

N-CHANNEL ENHANCEMENT MODE MOSFET

Features

• Low R

• Small form factor thermally efficient package enables higher

density end products

• Occupies just 33% of ggithe board area occupied by SO-8

enabling smaller end product

• 100% UIS (Avalanche) rated

• 100% Rg tested

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

– ensures on state losses are minimized

DS(ON)

Mechanical Data

• Case: POWERDI3333-8

• Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram Below

• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Weight: 0.008 grams (approximate)

Pin 1

D

Bottom View

S

S

S

G

1

2

3

4

Top View

Internal Schematic

8

7

6

5

POWERDI

®

Ordering Information (Note 4)

Part Number Compliance Case Packaging

DMN3010LFG-7 Standard POWERDI3333-8 2000/Tape & Reel

DMN3010LFG-13 Standard POWERDI3333-8 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

YYWW

G10

G10 = Product marking code
YYWW = Date code marking
YY = Last digit of year (ex: 10 for 2010)
WW = Week code (01 – 53)

DMN3010LFG

Document number: DS36195 Rev. 3 - 2

1 of 6

www.diodes.com

June 2014

© Diodes Incorporated

)

g

g

g

)

r

)

r

r

DMN3010LFG

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = 10V

Continuous Drain Current (Note 5) VGS = 10V

Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Avalanche Current (Notes 6) L = 0.1mH
Repetitive Avalanche Energy (Notes 6) L = 0.1mH

Steady

State

t<10s

Steady

State

T

= +25°C

A

= +70°C

T

A

= +25°C

T

A

T

= +70°C

A

T

= +25°C

C

= +100°C

T

C

V
V

I
I

E

DSS

GSS

I

D

I

D

I

D

DM

AR

AR

30 V

±20 V

11

8.5

14
11

30
20

A

A

A

90 A
24 A
29 mJ

Thermal Characteristics

Characteristic Symbol Value Units

Total Power Dissipation (Note 4)

NEW PRODUCT

Thermal Resistance, Junction to Ambient (Note 4)

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

Thermal Resistance, Junction to Case
Operating and Storage Temperature Range

Steady State

t < 10s 90 °C/W

Steady State

t < 10s 35 °C/W

P

R

P

R

R

T

J, TSTG

θJA

θJA

θJC

D

D

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

30 — — V
— — 1 μA

— — ±100 nA
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage

V

GS(th

R

DS(ON)

|Y
V

fs

SD

1.0 — 2.5 V
— 6.5 8.5
— 8 10.5

|

— 20 — S
— 0.75 1.0 V

DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance

C

iss

C

oss

C

rss

R
Total Gate Charge (VGS = 4.5V) Qg
Total Gate Charge (VGS = 10V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge

Notes: 4. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to production testing.

5. Device mounted on 2” x 2” FR-4 PCB with high coverage 2 oz. Copper, single sided.

6. Repetitive rating, pulse width limited by junction temperature.

7. I

and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C.

AR

DMN3010LFG

Document number: DS36195 Rev. 3 - 2

Q

s

Q

d

t

D(on

t

t

D(off

t

f

t

r

Q

r

www.diodes.com

— 2075 —
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190
138

2.4

16.1
37

6.1

5.9

4.5

19.6
31

10.7

13.7

— 18.3 — nC

2 of 6

—
—
—
—
—
—
—
—
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—
— ns

0.9 W

140 °C/W

2.4 W
52 °C/W

4.8 °C/W

-55 to +150 °C

VGS = 0V, ID = 250μA
VDS = 30V, VGS = 0V
VGS = ±20V, VDS = 0V

VDS = VGS, ID = 250μA
V

= 10V, ID = 18A

mΩ

GS

V

= 4.5V, ID = 16A

GS

VDS = 5V, ID = 18A
VGS = 0V, IS = 1A

= 15V, VGS = 0V,

V

pF

DS

f = 1.0MHz

Ω VDS = 0V, VGS = 0V, f = 1.0MHz

nC

V

= 15V, ID = 18A

DS

V

= 15V, VGS = 10V,

ns

DS

R

= 0.83Ω, R

L

=15A, di/dt=500A/µs

I

F

GEN

© Diodes Incorporated

= 3Ω,

June 2014