Diodes DMN3007LSS User Manual

θ

Features

• Low On-Resistance

• 7mΩ @ V

• 10mΩ @ V

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Lead Free By Design/RoHS Compliant (Note 2)

• "Green" Device (Note 4)

• Qualified to AEC-Q101 Standards for High Reliability

= 10V

GS

GS

= 4.5V

Top View

DMN3007LSS

SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET

Mechanical Data

• Case: SO-8

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals Connections: See Diagram

• Terminals: Finish - Matte Tin annealed over Copper lead

frame. Solderable per MIL-STD-202, Method 208

• Marking Information: See Page 4

• Ordering Information: See Page 4

• Weight: 0.072g (approximate)

SO-8

S

S
S
G

Top View

Internal Schematic

D

D
D
D

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1) Steady

State
Pulsed Drain Current (Note 3)

T

= 25°C

A

T

= 70°C

A

V

DSS

V

GSS

I

D

I

DM

30 V

±20

16
13

V
A

64 A

Thermal Characteristics

Characteristic Symbol Value Unit

Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range

Notes: 1. Device mounted on 2 oz. Copper pads on FR-4 PCB, with R

2. No purposefully added lead.

3. Pulse width ≤10μS, Duty Cycle ≤1%.

4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

JA

θ

= 50°C

P

R

T

J, TSTG

D
JA

DMN3007LSS

Document number: DS31460 Rev. 5 - 2

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2.5 W
50 °C/W

-55 to +150 °C

April 2010

© Diodes Incorporated

)

g

g

)

r

)

R

N

CUR

R

N

T

R

N CUR

REN

T

DMN3007LSS

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

30

⎯ ⎯
⎯ ⎯
⎯ ⎯

1

±100

V
μA
nA

V

= 0V, ID = 250μA

GS

= 30V, VGS = 0V

V

DS

V

= ±20V, VDS = 0V

GS

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance

Diode Forward Voltage (Note 5)

V

GS(th

R

DS (ON)

V

g

fs

SD

1.3

⎯

⎯

⎯

⎯

5

7.9

16.4

0.67 1.2 V

2.1 V
7

10
⎯

mΩ

S

V

DS

V

GS

V

GS

V

DS

VGS = 0V, IS = 2.3A

= VGS, ID = 250μA
= 10V, ID = 15A
= 4.5V, ID = 13A

= 10V, ID = 15A

DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance

C

⎯

iss

C

⎯

oss

C

⎯

rss

R

⎯

G

2714

436
380

0.7

⎯
⎯
⎯

pF
pF
pF

= 15V, VGS = 0V

V

DS

f = 1.0MHz

⎯ Ω VDS = 0V, VGS = 0V, f = 1.0MHz

SWITCHING CHARACTERISTICS

= 15V, VGS = 4.5V, ID = 16A

nC

ns

V

DS

V

= 15V, VGS = 10V, ID = 16A

DS

= 15V, VGS = 10V,

V

DS

I

= 1A, RG = 6.0Ω

D

Total Gate Charge
Gate-Source Charge

Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time

Notes: 5. Short duration pulse test used to minimize self-heating effect.

Q

⎯

g

Q

⎯

s

Q

⎯

d

t

⎯

d(on

t

⎯

t

⎯

d(off

t

⎯

f

31.2

64.2

7.1

17.1

10.3

14.8

85.1

43.6

⎯

⎯ VDS = 15V, VGS = 10V, ID = 16A
⎯ VDS = 15V, VGS = 10V, ID = 16A

⎯

⎯

⎯

⎯

30

V = 10V

GS

25

V = 4.5V

GS

30
28

26
24
22

(A)
E

AI

D

I, D

V = 4.0V

20

15

GS

V = 3.0V

GS

10

V = 2.8V

GS

5

V = 2.5V

0

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

V , DRAIN-SOURC E VOLT AGE (V)

DS

GS

Fig. 1 Typical Output Characteristic

(A)

20
18
16

14
12

AI

10

8

D

I, D

6
4
2

0

12 34

V , GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic

GS

T = 150°C

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

DMN3007LSS

Document number: DS31460 Rev. 5 - 2

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April 2010

© Diodes Incorporated

R

RAIN-SOUR

CE O

N-R

TAN

C

R

R

OUR

C

ON-R

T

C

R

R

OUR

C

GATE THRESH

O

OLTAG

O

U

R

CE C

URRENT

C, C

PACITANC

F

DMN3007LSS

12

Ω

11

E (m )

10

9
8

ESIS

7

V = 4.5V

GS

6
5
4

V = 10V

GS

3

, D

2
1

DS(ON)

0

0 5 10 15 20 25 30

I , DRAIN-SOURCE CURRENT (A)

D

Fig. 3 Typical On-Resistance

vs. Drain Current and Gate V oltage

1.6

Ω

14

V = 4.5V

E (m )
AN

ESIS

12

10

GS

T = 150°C

A

T = 125°C

A

T = 85°C

A

E

T = 25°C

A

T = -55°C

A

AIN-S
, D

DS(ON)

8

6

4

0 5 10 15 20 25 30

I , DRAIN CURRENT (A)

D

Fig. 4 Typical On-Resistance

vs. Drain C urrent and Temperature

2.4

V = 10V

1.4

E

GS

I = 10A

D

1.2

AIN-S
, D

1.0

DSON

0.8

ON-RESISTANCE (NORMALIZED)

0.6

-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)

A

Fig. 5 On-Resistance Variation with Temperature

30
27

T = 25°C

24

(A)

21

A

18
15

V = 4.5V

GS

I = 5A

D

E (V)

2.0

1.6

I = 250µA

D

I = 1mA

D

LD V

1.2

0.8

0.4

GS(TH)

V,

0

-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)

A

Fig. 6 Gate Threshold Variation vs. Ambient Temperature

10,000

)

C

E (p

iss

1,000

S

I, S

12

9
6

A

C

oss

C

rss

3
0

0 0.2 0.4 0.6 0.8 1 1.2

V , SOURCE-DRAIN VOLTAGE (V)

SD

Fig. 7 Dio de Forward Voltage vs. Current

DMN3007LSS

Document number: DS31460 Rev. 5 - 2

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100

0 5 10 15 20 25 30

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 8 Typical Total Capaci t ance

© Diodes Incorporated

April 2010

R

R

R

C

1

E

D = 0.7
D = 0.5

D = 0.3

ESISTAN

0.1

MAL

0.01

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.9

ANSIENT THE

D = 0.005

r(t), T

D = Single Pulse

0.001

0.0001 0.001 0.01 0.1 1 10 100 1,000 10,000
t , PULSE DURATION TIME (s)

1

Fig. 9 Transient Ther m al Respo nse

Ordering Information (Note 6)

Part Number Case Packaging

DMN3007LSS-13 SO-8 2500/Tape & Reel

Notes: 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

Marking Information

Top View

8 5

Logo

N3007LS

WW

YY

Part no.

1 4

Xth week: 01 ~ 53
Y ear: “07” = 2007
“08” = 2008

Package Outline Dimensions

E1

E

A1

Detail ‘A’

h

°

45

A2

A3

A

e

b

D

L

0.254

Gaug e Plane
Seating Plane

7°~9

°

Detail ‘A’

R (t) = r(t) * R

θθ

JA JA

R = 88°C/W

θ

JA

P(pk)

t

1

t

2

T - T = P * R (t)

JA JA12θ

Duty Cycle, D = t /t

SO-8

Dim Min Max

A - 1.75
A1 0.10 0.20
A2 1.30 1.50
A3 0.15 0.25

b 0.3 0.5

D 4.85 4.95

E 5.90 6.10
E1 3.85 3.95

e 1.27 Typ

h - 0.35

L 0.62 0.82

0° 8°

θ

All Dimensions in mm

DMN3007LSS

DMN3007LSS

Document number: DS31460 Rev. 5 - 2

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© Diodes Incorporated

DMN3007LSS

Suggested Pad Layout

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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
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Copyright © 2010, Diodes Incorporated

www.diodes.com

X

Dimensions Value (in mm)

X 0.60

C1

C2

Y

IMPORTANT NOTICE

LIFE SUPPORT

Y 1.55
C1 5.4
C2 1.27

DMN3007LSS

Document number: DS31460 Rev. 5 - 2

5 of 5

www.diodes.com

April 2010

© Diodes Incorporated