Diodes DMN3007LSS User Manual
θ
Features
• Low On-Resistance
• 7mΩ @ V
• 10mΩ @ V
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 2)
• "Green" Device (Note 4)
• Qualified to AEC-Q101 Standards for High Reliability
= 10V
GS
GS
= 4.5V
Top View
DMN3007LSS
SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET
Mechanical Data
• Case: SO-8
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals Connections: See Diagram
• Terminals: Finish - Matte Tin annealed over Copper lead
frame. Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.072g (approximate)
SO-8
S
S
S
G
Top View
Internal Schematic
D
D
D
D
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1) Steady
State
Pulsed Drain Current (Note 3)
T
= 25°C
A
T
= 70°C
A
V
DSS
V
GSS
I
D
I
DM
30 V
±20
16
13
V
A
64 A
Thermal Characteristics
Characteristic Symbol Value Unit
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Notes: 1. Device mounted on 2 oz. Copper pads on FR-4 PCB, with R
2. No purposefully added lead.
3. Pulse width ≤10μS, Duty Cycle ≤1%.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
JA
θ
= 50°C
P
R
T
J, TSTG
D
JA
DMN3007LSS
Document number: DS31460 Rev. 5 - 2
1 of 5
www.diodes.com
2.5 W
50 °C/W
-55 to +150 °C
April 2010
© Diodes Incorporated
)
g
g
)
r
)
R
N
CUR
R
N
T
R
N CUR
REN
T
DMN3007LSS
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV
I
DSS
I
GSS
DSS
30
⎯ ⎯
⎯ ⎯
⎯ ⎯
1
±100
V
μA
nA
V
= 0V, ID = 250μA
GS
= 30V, VGS = 0V
V
DS
V
= ±20V, VDS = 0V
GS
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage (Note 5)
V
GS(th
R
DS (ON)
V
g
fs
SD
1.3
⎯
⎯
⎯
⎯
5
7.9
16.4
0.67 1.2 V
2.1 V
7
10
⎯
mΩ
S
V
DS
V
GS
V
GS
V
DS
VGS = 0V, IS = 2.3A
= VGS, ID = 250μA
= 10V, ID = 15A
= 4.5V, ID = 13A
= 10V, ID = 15A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
C
⎯
iss
C
⎯
oss
C
⎯
rss
R
⎯
G
2714
436
380
0.7
⎯
⎯
⎯
pF
pF
pF
= 15V, VGS = 0V
V
DS
f = 1.0MHz
⎯ Ω VDS = 0V, VGS = 0V, f = 1.0MHz
SWITCHING CHARACTERISTICS
= 15V, VGS = 4.5V, ID = 16A
nC
ns
V
DS
V
= 15V, VGS = 10V, ID = 16A
DS
= 15V, VGS = 10V,
V
DS
I
= 1A, RG = 6.0Ω
D
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Notes: 5. Short duration pulse test used to minimize self-heating effect.
Q
⎯
g
Q
⎯
s
Q
⎯
d
t
⎯
d(on
t
⎯
t
⎯
d(off
t
⎯
f
31.2
64.2
7.1
17.1
10.3
14.8
85.1
43.6
⎯
⎯ VDS = 15V, VGS = 10V, ID = 16A
⎯ VDS = 15V, VGS = 10V, ID = 16A
⎯
⎯
⎯
⎯
30
V = 10V
GS
25
V = 4.5V
GS
30
28
26
24
22
(A)
E
AI
D
I, D
V = 4.0V
20
15
GS
V = 3.0V
GS
10
V = 2.8V
GS
5
V = 2.5V
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
V , DRAIN-SOURC E VOLT AGE (V)
DS
GS
Fig. 1 Typical Output Characteristic
(A)
20
18
16
14
12
AI
10
8
D
I, D
6
4
2
0
12 34
V , GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
GS
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
DMN3007LSS
Document number: DS31460 Rev. 5 - 2
2 of 5
www.diodes.com
April 2010
© Diodes Incorporated
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