Diodes DMN2990UFZ User Manual
Product Summary
V
R
(BR)DSS
0.99Ω @ V
20V
1.2Ω @ VGS = 2.5V
1.8Ω @ VGS = 1.8V
2.4Ω @ VGS = 1.5V
DS(ON)
max
= 4.5V
GS
Description
This MOSFET has been designed to minimize the on-state resistance
NEW PRODUCT
(R
ideal for high efficiency power management applications.
) and yet maintain superior switching performance, making it
DS(ON)
Applications
• General Purpose Interfacing Switch
• Power Management Functions
NEW PRODUCT
• Analog Switch
ADVANCED INFORMATION
ESD PROTECTED
Bottom View
Ordering Information (Note 4)
I
max
D
TA = +25°C
250mA
230mA
180mA
150mA
DMN2990UFZ
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
• Low Package Profile, 0.42mm Maximum Package height
• 0.62mm x 0.62mm package footprint
• Low On-Resistance
• Very low Gate Threshold Voltage, 1.0V max
• ESD Protected Gate
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
• Case: X2-DFN0606-3
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish – NiPdAu over Copper leadframe
Solderable per MIL-STD-202, Method 208
• Weight: 0.001 grams (approximate)
Equivalent Circuit
Package Pin Configuration
e4
Top View
Part Number Case Packaging
DMN2990UFZ-7B X2-DFN0606-3 10K/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
DMN2990UFZ
Document number: DS36693 Rev. 2 - 2
Top View
Bar Denotes Gate
and Source Side
www.diodes.com
6N = Product Type Marking Code
1 of 6
January 2014
© Diodes Incorporated
V
V
DMN2990UFZ
Maximum Ratings (@T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = 4.5V
Pulsed Drain Current (Note 6)
= +25°C, unless otherwise specified.)
A
Characteristic Symbol
V
DSS
V
GSS
= +25°C
Steady
State
T
A
= +85°C
T
A
I
I
DM
alue Units
D
20 V
±8 V
250
170
mA
800 mA
NEW PRODUCT
Thermal Characteristics (@T
Total Power Dissipation (Note 5) Steady state
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
= +25°C, unless otherwise specified.)
A
Characteristic Symbol
P
D
Steady state
R
T
J, TSTG
θJA
alue Units
320 mW
402 °C/W
-55 to +150 °C
Electrical Characteristics (@T
NEW PRODUCT
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
ADVANCED INFORMATION
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current @TC = +25°C I
Gate-Source Leakage
BV
I
DSS
DSS
GSS
20
— —
— —
—
— V
100 nA
±100 nA
VGS = 0V, ID = 250μA
VDS = 16V, VGS = 0V
VGS = ±5V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V
R
DS(ON)
|Y
V
GS(th)
fs
SD
0.4 — 1.0 V
—
—
—
—
—
180
|
— 0.6 1.0 V
0.60 0.99
0.75 1.2
0.90 1.8
1.2 2.4
2.0 —
— —
VDS = VGS, ID = 250μA
= 4.5V, ID = 100mA
V
GS
V
= 2.5V, ID = 50mA
GS
Ω
mS
= 1.8V, ID = 20mA
V
GS
= 1.5V, ID = 10mA
V
GS
V
= 1.2V, ID = 1mA
GS
VDS = 10V, ID = 400mA
VGS = 0V, IS = 150mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
C
C
C
Q
Q
Q
t
D(on)
t
D(off)
iss
oss
rss
gd
t
t
g
gs
r
f
— 28.2 55.2 pF
—
—
—
—
—
—
—
—
—
4.0 8.0 pF
2.8 5.6 pF
0.5
0.07
0.07
3.5
2.1
22
7.7
—
—
—
—
—
—
—
nC
nC
nC
ns
ns
ns
ns
= 16V, VGS = 0V,
V
DS
f = 1.0MHz
= 4.5V, VDS = 10V,
V
GS
= 250mA
I
D
= 10V, VGS = 4.5V,
V
DD
= 47Ω, RG = 10Ω,
R
L
= 200mA
I
D
DMN2990UFZ
Document number: DS36693 Rev. 2 - 2
2 of 6
www.diodes.com
January 2014
© Diodes Incorporated
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