Diodes DMN2990UDJ User Manual

NEW PRODUCT

Product Summary

I

max

D

V

R

(BR)DSS

0.99 @ V

20V

1.2 @ VGS = 2.5V

1.8 @ VGS = 1.8V

2.4 @ VGS = 1.5V

DS(ON)

max

= 4.5V

GS

TA = 25°C

450mA
400mA
330mA
300mA

Description

This MOSFET has been designed to minimize the on-state resistance

) and yet maintain superior switching performance, making it

(R

DS(on)

ideal for high efficiency power management applications.

Applications

• General Purpose Interfacing Switch

• Power Management Functions

• DC-DC Converters

• Analog Switch

ESD PROTECTED

SOT963

Top View

DMN2990UDJ

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features

• Dual N-Channel MOSFET

• Low On-Resistance

• Very low Gate Threshold Voltage, 1.0V max

• Low Input Capacitance

• Fast Switching Speed

• Ultra-Small Surface Mount Package 1mm x 1mm

• Low Package Profile, 0.45mm Maximum Package height

• ESD Protected Gate

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 standards for High Reliability

Mechanical Data

• Case: SOT963

• Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections Indicator: See diagram

• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Weight: 0.027 grams (approximate)

D

S

Schematic and Transistor Diagram

1

1

G

G

Top View

S

2

D

1

2

2

Ordering Information (Note 4)

Part Number Case Packaging

DMN2990UDJ-7 SOT963 10K/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

DMN2990UDJ

Document number: DS35401 Rev. 7 - 2

L1

L1 = Product Type Marking Code

1 of 6

www.diodes.com

September 2012

© Diodes Incorporated

θ

)

g

g

g

)

r

)

NEW PRODUCT

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = 4.5V

Continuous Drain Current (Note 5) VGS = 1.8V
Pulsed Drain Current (Note 6)

Thermal Characteristics (@T

A

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range

T

Steady

State

Steady

State

= +25°C

A

T

= +70°C

A

T

= +25°C

A

= +70°C

T

A

= +25°C, unless otherwise specified.)

P

R

T

J, TSTG

DMN2990UDJ

V

DSS

V

GSS

I

D

I

D

I

DM

D
JA

-55 to +150 °C

20 V
±8 V

450
350

330
220

mA

mA

800 mA

350 mW
360 °C/W

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current @Tc = +25°C I
Gate-Source Leakage

BV

I

GSS

DSS

DSS

20 - - V

- - 50

- - 100

- - ±100 nA

VGS = 0V, ID = 250A
V

= 5V, VGS = 0V

nA

DS

= 16V, VGS = 0V

V

DS

VGS = ±5V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage (Note 6)

V

GS(th

R

DS (ON)

|Y
V

fs

SD

0.4 - 1.0 V

- 0.60 0.99

- 0.75 1.2

- 0.90 1.8

- 1.2 2.4

- 2.0 -

180 - - mS

|

- 0.6 1.0 V

VDS = VGS, ID = 250A

V

= 4.5V, ID = 100mA

GS

V

= 2.5V, ID = 50mA

Ω

GS

V

= 1.8V, ID = 20mA

GS

V

= 1.5V, ID = 10mA

GS

V

= 1.2V, ID = 1mA

GS

VDS = 10V, ID = 400mA

VGS = 0V, IS = 150mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout.

6. Device mounted on minimum recommended pad layout test board, 10s pulse duty cycle = 1%.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

C
C

t

t

C

oss
rss

Q
Q
Q

D(on

t

D(off

t

iss

s
d

f

- 27.6 - pF

- 4.0 - pF

- 2.8 - pF

- 0.5 - nC

- 0.07 - nC

- 0.07 - nC

- 4.0 - ns

- 3.3 - ns

- 19.0 - ns

- 6.4 - ns

V

= 16V, VGS = 0V,

DS

f = 1.0MHz

V

= 4.5V, VDS = 10V,

GS

I

= 250mA

D

= 10V, VGS = 4.5V,

V

DD

= 47, RG = 10,

R

L

I

= 200mA

D

DMN2990UDJ

Document number: DS35401 Rev. 7 - 2

2 of 6

www.diodes.com

September 2012

© Diodes Incorporated