NEW PRODUCT
Product Summary
I
max
D
V
R
(BR)DSS
0.99 @ V
20V
1.2 @ VGS = 2.5V
1.8 @ VGS = 1.8V
2.4 @ VGS = 1.5V
DS(ON)
max
= 4.5V
GS
TA = 25°C
450mA
400mA
330mA
300mA
Description
This MOSFET has been designed to minimize the on-state resistance
) and yet maintain superior switching performance, making it
(R
DS(on)
ideal for high efficiency power management applications.
Applications
• General Purpose Interfacing Switch
• Power Management Functions
• DC-DC Converters
• Analog Switch
ESD PROTECTED
SOT963
Top View
DMN2990UDJ
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features
• Dual N-Channel MOSFET
• Low On-Resistance
• Very low Gate Threshold Voltage, 1.0V max
• Low Input Capacitance
• Fast Switching Speed
• Ultra-Small Surface Mount Package 1mm x 1mm
• Low Package Profile, 0.45mm Maximum Package height
• ESD Protected Gate
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
• Case: SOT963
• Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections Indicator: See diagram
• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.027 grams (approximate)
D
S
Schematic and Transistor Diagram
1
1
G
G
Top View
S
2
D
1
2
2
Ordering Information (Note 4)
Part Number Case Packaging
DMN2990UDJ-7 SOT963 10K/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
DMN2990UDJ
Document number: DS35401 Rev. 7 - 2
L1
L1 = Product Type Marking Code
1 of 6
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September 2012
© Diodes Incorporated
θ
)
g
g
g
)
r
)
NEW PRODUCT
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = 4.5V
Continuous Drain Current (Note 5) VGS = 1.8V
Pulsed Drain Current (Note 6)
Thermal Characteristics (@T
A
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
T
Steady
State
Steady
State
= +25°C
A
T
= +70°C
A
T
= +25°C
A
= +70°C
T
A
= +25°C, unless otherwise specified.)
P
R
T
J, TSTG
DMN2990UDJ
V
DSS
V
GSS
I
D
I
D
I
DM
D
JA
-55 to +150 °C
20 V
±8 V
450
350
330
220
mA
mA
800 mA
350 mW
360 °C/W
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current @Tc = +25°C I
Gate-Source Leakage
BV
I
GSS
DSS
DSS
20 - - V
- - 50
- - 100
- - ±100 nA
VGS = 0V, ID = 250A
V
= 5V, VGS = 0V
nA
DS
= 16V, VGS = 0V
V
DS
VGS = ±5V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 6)
V
GS(th
R
DS (ON)
|Y
V
fs
SD
0.4 - 1.0 V
- 0.60 0.99
- 0.75 1.2
- 0.90 1.8
- 1.2 2.4
- 2.0 -
180 - - mS
|
- 0.6 1.0 V
VDS = VGS, ID = 250A
V
= 4.5V, ID = 100mA
GS
V
= 2.5V, ID = 50mA
Ω
GS
V
= 1.8V, ID = 20mA
GS
V
= 1.5V, ID = 10mA
GS
V
= 1.2V, ID = 1mA
GS
VDS = 10V, ID = 400mA
VGS = 0V, IS = 150mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on minimum recommended pad layout test board, 10s pulse duty cycle = 1%.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
C
C
t
t
C
oss
rss
Q
Q
Q
D(on
t
D(off
t
iss
s
d
f
- 27.6 - pF
- 4.0 - pF
- 2.8 - pF
- 0.5 - nC
- 0.07 - nC
- 0.07 - nC
- 4.0 - ns
- 3.3 - ns
- 19.0 - ns
- 6.4 - ns
V
= 16V, VGS = 0V,
DS
f = 1.0MHz
V
= 4.5V, VDS = 10V,
GS
I
= 250mA
D
= 10V, VGS = 4.5V,
V
DD
= 47, RG = 10,
R
L
I
= 200mA
D
DMN2990UDJ
Document number: DS35401 Rev. 7 - 2
2 of 6
www.diodes.com
September 2012
© Diodes Incorporated
R
R
OUR
ON-R
2
R
R
OUR
CE ON-R
TANC
R
R
N-SOUR
C
O
N
R
T
N
C
2
DMN2990UDJ
NEW PRODUCT
0.8
0.6
V = 4.5V
GS
V = 4.0V
GS
V = 3.0V
GS
V = 2.5V
GS
V = 2.0V
GS
0.4
V = 1.5V
GS
D
I , DRAIN CURRENT (A)
0.2
V = 1.2V
0
0123 4
V , DRAIN-SOURCE VOLTAGE (A)
DS
GS
Fig. 1 Typical Output Characteristics
1.2
Ω
0.8
V = 5.0V
DS
T = -55°C
A
T = A25°C
0.6
T =
0.4
D
I , DRAIN CURRENT(A)
0.2
0
0 0.5 1.0 1.5 2.0 2.5 3.0
V , GATE-SOURCE VOL TAGE (V)
GS
A
Fig. 2 Typical Transfer Characteristics
1.
Ω
T =
A
T =
A
125°C
150°C
85°C
E ( )
1.0
ESISTANCE ( )
CE
AIN-S
, D
0.8
0.6
0.4
0.2
DS(ON)
V = 1.8V
GS
V = 2.5V
GS
V = 4.5V
GS
0 0.2 0.4 0.6 0.8
I , DRAIN-SOURCE CURRENT
D
Fig. 3 Typical On-Resistance vs.
Drain Curr ent and Gate V oltage
1.6
Ω
ESIS
AIN-S
, D
1.0
0.8
0.6
0.4
0.2
DS(ON)
1.
V = 4.5V
GS
T = 150°C
A
T = A125°C
85°C
T =
A
T =
25°C
A
T = A-55°C
0
0 0.2 0.4 0.6 0.8 1.0
I DRAIN CURRENT (A)
D
Fig. 4 Typical On-Resistance
vs. Drain C urrent and Tem perature
E ( )
1.4
1.2
V = 4.5V,
GS
1.0
I = 300mA
D
DS(ON)
R , DRAIN-SOURCE
ON-RESISTA NCE (Normalized)
0.8
V = 2.5V,
GS
I = 150mA
0.6
-50 -25 0 25 50 75 100 125 150
D
T , JUNCTION TEMPERATURE( C)
J
Fig. 5 On-Resistance Variation with T emperature
°
1.0
A
V = 2.5V
0.8
ESIS
E
0.6
0.4
GS
I = 150mA
D
V = 4.5V
GS
I = 300mA
D
AI
0.2
, D
DS(ON)
0
-50-25 0 25 50 75 100125150
T , JUNCTION TEMPERATURE( C)
J
Fig. 6 On-Resistance Variation with Temperature
°
DMN2990UDJ
Document number: DS35401 Rev. 7 - 2
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September 2012
© Diodes Incorporated
2
OUR
CE CUR
REN
T
C
T
UNC
TION CAPACITANC
F
G
T
THRESH
O
OLT
G
NEW PRODUCT
1.
1.0
I = 1mA
0.8
I = 250µA
D
D
0.6
0.4
0.2
GS(TH)
V , GATE THRESHOLD VOLTAGE (V)
0
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE( C)
J
°
Fig. 7 Gate Threshold V ariation vs. Am bi ent Te m perature
50
)
f = 1MHz
40
E (p
30
C
iss
DMN2990UDJ
1.0
0.8
(A)
T = 25°C
0.6
0.4
S
I, S
0.2
0
0 0.2 0.4 0.6 0.8 1.0 1.2
V , SOURCE- DRAIN VOLTAGE (V)
SD
Fig. 8 Diod es Forwar d Voltage vs . Cur r ent
1,000
100
A
T = 150°C
A
125°C
T =
A
20
, J
10
C
oss
C
0
V , DRAIN-SOURCE VOLTAGE (V)
DS
rss
10 15 2050
Fig. 9 Typical Junction Capacitance
8
E (V)
6
A
LD V
4
E
2
A
V = 10V
GS
V
0
0 0.2 0.4 0.6 0.8 1
Q (nC)
, TOTAL GATE CHARGE
g
DS
I = 250mA
D
Fig. 11 Gate Charge
85°C
T =
10
DSS
I , LEAKAGE CURRENT (nA)
1
2 4 6 8 10 12 14 16 18 20
V , DRAIN-SOURCE VOLTAGE (V)
DS
A
T = A25°C
Fig. 10 Typical Drain-Source Leakage Current vs. Voltage
1
R
DS(on)
Limited
0.1
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
P = 10µs
W
0.01
D
I , DRAIN CURRENT (A)
T = 150°C
J(MAX)
T = 25°C
A
Single Puls e
RLimited
DS(ON)
0.001
0.1
110100
V , DRAIN-SOURCE VOLTAGE
DS
Fig. 12 SOA, Safe Operation Area
DMN2990UDJ
Document number: DS35401 Rev. 7 - 2
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© Diodes Incorporated
NEW PRODUCT
1
D = 0.7
D = 0.5
D = 0.3
D = 0.9
R(t), TRANSIENT THERMAL RESISITANCE
0.1
0.01
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
Single Puls e
0.001
0.000001 0.00001 0.0001 0.001 0.01
0.1 1 10 100 1000
t1, PULSE DURATION TIME (sec)
Fig. 13 Transient Thermal Resisitance
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
E1
A1
D
e1
L
Dim Min Max Typ
A 0.40 0.50 0.45
A1 0 0.05 -
E
c 0.120 0.180 0.150
D 0.95 1.05 1.00
E 0.95 1.05 1.00
E1 0.75 0.85 0.80
e
b (6 places)
c
L 0.05 0.15 0.10
b 0.10 0.20 0.15
e 0.35 Typ
e1 0.70 Typ
A
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
CC
SOT963
DMN2990UDJ
R (t) = r(t)*R
θθ
JA JA
R = 356C/W
θ
JA
Duty Cycle, D = t1/t2
Y1
Y (6X)
DMN2990UDJ
Document number: DS35401 Rev. 7 - 2
X (6X)
Dimensions Value (in mm)
5 of 6
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C 0.350
X 0.200
Y 0.200
Y1 1.100
September 2012
© Diodes Incorporated
NEW PRODUCT
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document o r products described herein in such applica tions shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2012, Diodes Incorporated
www.diodes.com
DMN2990UDJ
DMN2990UDJ
Document number: DS35401 Rev. 7 - 2
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September 2012
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