Diodes DMN26D0UFB4 User Manual
p
n
Product Summary
I
V
R
(BR)DSS
20V
DS(on)
3.0Ω @ V
6.0Ω @ VGS = 1.8V
= 4.5V
GS
D
TA = 25°C
240mA
170mA
Description and Applications
This new generation MOSFET has been designed to minimize the onstate resistance (R
performance, making it ideal for high efficiency power management
applications.
• DC-DC Converters
• Power management functions
) and yet maintain superior switching
DS(on)
N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
• N-Channel MOSFET
• Low On-Resistance:
• 3.0 Ω @ 4.5V
• 4.0 Ω @ 2.5V
• 6.0 Ω @ 1.8V
• 10 Ω @ 1.5V
• Very Low Gate Threshold Voltage, 1.05V max
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package, 0.4mm Maximum Package
Height
• ESD Protected Gate
• Lead, Halogen and Antimony Free, RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: X2-DFN1006-3
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram
• Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
• Weight: 0.001 grams (approximate)
ESD PROTECTED
X2-DFN1006-3
Bottom View
Gate
Gate
Protection
Diode
Equivalent Circuit
Drai
Source
Body
Diode
S
D
G
To
View
Ordering Information (Note 3)
Part Number Case Packaging
DMN26D0UFB4-7 X2-DFN1006-3 3,000/Tape & Reel
DMN26D0UFB4-7B X2-DFN1006-3 10,000/Tape & Reel
Notes: 1. No purposefully added lead.
2.
Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Dot Denotes Drain Side
M1
Top View
DMN26D0UFB4
Document number: DS31775 Rev. 7 - 2
DMN26D0UFB4-7BDMN26D0UFB4-7
M1
Top View
Bar Denotes Gate
and Source Side
1 of 6
www.diodes.com
M1 = Product Type Marking Code
March 2012
© Diodes Incorporated
θ
)
)
r
)
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Drain Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 4) VGS = 4.5V
Continuous Drain Current (Note 4) VGS = 1.8V
Steady
State
Steady
State
T
= 25°C
A
= 70°C
T
A
T
= 25°C
A
T
= 70°C
A
V
DSS
V
GSS
I
D
I
D
Pulsed Drain Current - TP = 10µs IDM
20 V
±10
240
190
180
140
V
mA
mA
805 mA
Thermal Characteristics @T
Total Power Dissipation (Note 4) @TA = 25°C PD
Thermal Resistance, Junction to Ambient (Note 4)
Operating and Storage Temperature Range
= 25°C unless otherwise specified
A
350 mW
R
JA
T
, T
J
STG
357
-55 to +150
°C/W
°C
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current @ TC = 25°C I
Gate-Body Leakage
BV
I
DSS
DSS
GSS
20
⎯ ⎯
⎯ ⎯
⎯ ⎯
500 nA
±1
±100
V
μA
nA
V
= 0V, ID = 100μA
GS
V
= 20V, VGS = 0V
DS
= ±10V, VDS = 0V
V
GS
V
= ±5V, VDS = 0V
GS
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Source-Drain Diode Forward Voltage
V
GS(th
R
DS (ON)
|Y
V
SD
0.45
⎯
⎯
⎯
⎯
180 242
|
fs
0.5
⎯
1.8
2.5
3.4
4.7
⎯
1.05 V
3.0
4.0
6.0
10.0
⎯
1.4 V
VDS = VGS, ID = 250μA
V
V
Ω
V
V
mS
VDS = 10V, ID = 0.1A
VGS = 0V, IS = 115mA
= 4.5V, ID = 100mA
GS
= 2.5V, ID = 50mA
GS
= 1.8V, ID = 20mA
GS
= 1.5V, ID = 10mA
GS
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
⎯
iss
C
⎯
oss
C
⎯
rss
14.1
2.9
1.6
⎯
⎯
⎯
pF
pF
pF
V
= 15V, VGS = 0V
DS
f = 1.0MHz
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Notes: 4. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
5.
Short duration pulse test used to minimize self-heating effect.
t
d(on
t
d(off
t
t
f
⎯
⎯
⎯
⎯
3.8
7.9
13.4
15.2
⎯
⎯
⎯
⎯
ns
V
= 4.5V, VDD = 10V
GS
= 200mA, RG = 2.0Ω
I
D
DMN26D0UFB4
Document number: DS31775 Rev. 7 - 2
2 of 6
www.diodes.com
March 2012
© Diodes Incorporated
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