Diodes DMN26D0UDJ User Manual

Product Summary

V

R

(BR)DSS

20V

DS(on)

3.0 @ V

= 4.5V

GS

6.0 @ VGS= 1.8V

Description

This new generation MOSFET has been designed to minimize the on-

state resistance (R

) and yet maintain superior switching

DS(on)

performance, making it ideal for high efficiency power management

applications.

NEW PRODUCT

Applications

 DC-DC Converters

 Power management functions

ESD PROTECTED

I

D

TA = +25°C

240mA
180mA

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features

 Dual N-Channel MOSFET

 Low On-Resistance:

 3.0@ 4.5V

 4.0@ 2.5V

 6.0@1.8V

 10@1.5V

 Very Low Gate Threshold Voltage, 1.05V max

 Low Input Capacitance

 Fast Switching Speed

 Ultra-Small Surface Mount Package

 ESD Protected Gate (HBM 300V)

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

Mechanical Data

 Case: SOT963

 Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminal Connections: See Diagram

 Terminals: Finish – Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

 Weight: 0.0027 grams (approximate)

D

G

1

2

SOT963

G

S

Top View Top View

Schematic and Transistor Diagram

1

1

DMN26D0UDJ

S

2

D

2

Ordering Information (Note 4)

Part Number Case Packaging

DMN26D0UDJ-7 SOT963 10,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

Marking Information (Note 5)

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

D

G

1

S

2

2

M1

M1 = Product Type Marking Code

Notes: 5. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways).

S

1

DMN26D0UDJ

Document number: DS31481 Rev. 8 - 2

D

G

2

1

www.diodes.com

1 of 5

May 2014

© Diodes Incorporated

)

)

r

)

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit

Drain Source Voltage
Gate-Source Voltage

= +25°C

Continuous Drain Current (Note 6) VGS = 4.5V

Continuous Drain Current (Note 6) VGS = 1.8V

Steady

State

Steady

State

T

A

T

= +70°C

A

T

= +25°C

A

= +70°C

T

A

Pulsed Drain Current - TP = 10µs IDM

Thermal Characteristics

NEW PRODUCT

Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range

Characteristic Symbol Value Unit

P

D

R

JA

T

, T

J

STG

DMN26D0UDJ

V

DSS

V

GSS

I

D

I

D

300 mW
409 °C/W

-55 to +150 °C

20 V
10
240

190

180
140

V

mA

mA

805 mA

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current @ TJ = +25°C

= +85°C (Note 8)

@T

J

Gate-Body Leakage

BV

I

I

DSS

DSS

GSS

20

 

 

 

500

1.7

1

100

V

V

= 0V, ID = 100A

GS

V

nA

µA

A
nA

= 20V, VGS = 0V

DS

= 2.6V, VGS = 0V

V

DS

= ±10V, VDS = 0V

V

GS

V

= ±5V, VDS = 0V

GS

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transconductance
Source-Drain Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y
V

0.45 0.8 1.05 V

1.8 3.0

2.5 4.0

3.4 6.0

4.7 10.0

9.5

SD











180 240

|

fs

0.5 0.8 1.0 V





VDS = VGS, ID = 250A

= 4.5V, ID = 100mA

V

GS

V

= 2.5V, ID = 50mA

GS



V

= 1.8V, ID = 20mA

GS

V

= 1.5V, ID = 10mA

GS

= 1.2V, ID = 1mA

V

mS

GS

VDS =10V, ID = 0.1A
VGS = 0V, IS = 10mA

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

C

iss

C

oss

C



rss




14.1

2.9

1.6





pF
pF
pF

= 15V, VGS = 0V

V

DS

f = 1.0MHz

SWITCHING CHARACTERISTICS, VGS = 4.5V (Note 8)

Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time

Notes: 6. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch with minimum recommended pad layout; pad layout as shown on Diodes Inc. suggested
pad layout document AP02001, which can be found on our website at http://www.diodes.com.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design, not subject to production testing.

t



d(on

t



t



d(off

t



f

3.8

7.9

13.4

15.2







ns

V

= 4.5V, VDD = 10V

GS

I

= 200mA, RG = 2.0

D

DMN26D0UDJ

Document number: DS31481 Rev. 8 - 2

2 of 5

www.diodes.com

May 2014

© Diodes Incorporated