Diodes DMN26D0UDJ User Manual

Product Summary

V

R

(BR)DSS

20V

DS(on)

3.0 @ V

= 4.5V

GS

6.0 @ VGS= 1.8V

Description

This new generation MOSFET has been designed to minimize the on-

state resistance (R

) and yet maintain superior switching

DS(on)

performance, making it ideal for high efficiency power management

applications.

NEW PRODUCT

Applications

 DC-DC Converters

 Power management functions

ESD PROTECTED

I

D

TA = +25°C

240mA
180mA

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features

 Dual N-Channel MOSFET

 Low On-Resistance:

 3.0@ 4.5V

 4.0@ 2.5V

 6.0@1.8V

 10@1.5V

 Very Low Gate Threshold Voltage, 1.05V max

 Low Input Capacitance

 Fast Switching Speed

 Ultra-Small Surface Mount Package

 ESD Protected Gate (HBM 300V)

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

Mechanical Data

 Case: SOT963

 Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminal Connections: See Diagram

 Terminals: Finish – Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

 Weight: 0.0027 grams (approximate)

D

G

1

2

SOT963

G

S

Top View Top View

Schematic and Transistor Diagram

1

1

DMN26D0UDJ

S

2

D

2

Ordering Information (Note 4)

Part Number Case Packaging

DMN26D0UDJ-7 SOT963 10,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

Marking Information (Note 5)

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

D

G

1

S

2

2

M1

M1 = Product Type Marking Code

Notes: 5. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways).

S

1

DMN26D0UDJ

Document number: DS31481 Rev. 8 - 2

D

G

2

1

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)

)

r

)

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit

Drain Source Voltage
Gate-Source Voltage

= +25°C

Continuous Drain Current (Note 6) VGS = 4.5V

Continuous Drain Current (Note 6) VGS = 1.8V

Steady

State

Steady

State

T

A

T

= +70°C

A

T

= +25°C

A

= +70°C

T

A

Pulsed Drain Current - TP = 10µs IDM

Thermal Characteristics

NEW PRODUCT

Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range

Characteristic Symbol Value Unit

P

D

R

JA

T

, T

J

STG

DMN26D0UDJ

V

DSS

V

GSS

I

D

I

D

300 mW
409 °C/W

-55 to +150 °C

20 V
10
240

190

180
140

V

mA

mA

805 mA

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current @ TJ = +25°C

= +85°C (Note 8)

@T

J

Gate-Body Leakage

BV

I

I

DSS

DSS

GSS

20

 

 

 

500

1.7

1

100

V

V

= 0V, ID = 100A

GS

V

nA

µA

A
nA

= 20V, VGS = 0V

DS

= 2.6V, VGS = 0V

V

DS

= ±10V, VDS = 0V

V

GS

V

= ±5V, VDS = 0V

GS

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transconductance
Source-Drain Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y
V

0.45 0.8 1.05 V

1.8 3.0

2.5 4.0

3.4 6.0

4.7 10.0

9.5

SD











180 240

|

fs

0.5 0.8 1.0 V





VDS = VGS, ID = 250A

= 4.5V, ID = 100mA

V

GS

V

= 2.5V, ID = 50mA

GS



V

= 1.8V, ID = 20mA

GS

V

= 1.5V, ID = 10mA

GS

= 1.2V, ID = 1mA

V

mS

GS

VDS =10V, ID = 0.1A
VGS = 0V, IS = 10mA

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

C

iss

C

oss

C



rss




14.1

2.9

1.6





pF
pF
pF

= 15V, VGS = 0V

V

DS

f = 1.0MHz

SWITCHING CHARACTERISTICS, VGS = 4.5V (Note 8)

Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time

Notes: 6. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch with minimum recommended pad layout; pad layout as shown on Diodes Inc. suggested
pad layout document AP02001, which can be found on our website at http://www.diodes.com.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design, not subject to production testing.

t



d(on

t



t



d(off

t



f

3.8

7.9

13.4

15.2







ns

V

= 4.5V, VDD = 10V

GS

I

= 200mA, RG = 2.0

D

DMN26D0UDJ

Document number: DS31481 Rev. 8 - 2

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R

CUR

R

T

R

CUR

R

T

R

R

OUR

CE ON-R

TANC

R

R

OUR

C

NEW PRODUCT

DMN26D0UDJ

0.8

0.7

V = 8V

GS

V = 4.5V

GS

0.6

(A)

0.5

EN

0.4

AIN

0.3

D

I, D

0.2

0.1

0

0 0.5 1 1.5 2 2.5 3

V , DRAIN-SOURCE VOLTAGE (V)

DS

V = 3.0V

V = 2.5V

V = 2.0V

V = 1.5V

Fig. 1 Typical Output Characteristic

10



9

GS

GS

GS

GS

0.4

V = -10V

DS

T = -55°C

0.3

(A)

A

T = 25°C

A

EN

0.2

T = 150°C

A

AIN

D

I, D

0.1

0

0 0.5 1 1.5 2 2.5 3

V , GATE-SOURCE VOLTAGE (V)

GS

Fig. 2 Typical Transfer Characteristic

4



E ( )

V = 4.5V

GS

T = 85°C

A

T = 125°C

A

8

7

6

V = 1.2V

5

GS

4

3

2

1

DS(ON)

R , DRAIN-SOURCE ON-RESISTANCE ( )

0

1 10 100 1,000

V = 1.5V

GS

V = 1.8V

GS

V = 2.5V

GS

V = 4.5V

GS

I , DRAIN-SOURCE CURRENT (mA)

D

Fig. 3 Typical On-Resistance

vs. Drain Current and Gate Voltage

2.0

3

ESIS

T = 150°C

A

2

AIN-S

1

, D

DS(ON)

0

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

0.01 0.1 1
I , DRAIN CURRENT (A)

D

Fig. 4 Typical On-Resistance

vs. Drain Current and Temperature

4.0

1.8

1.6

V = 4.5V

GS

I = 500mA

D

3.5

E

3.0



1.4

1.2

V = 2.5V
I = 150mA

1.0

DSON

R , DRAIN-SOURCE

0.8

ON-RESISTANCE (NORMALIZED)

0.6

0.4

-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)

A

Fig. 5 On-Resistance Variation with Temperature

GS

D

2.5

AIN-S

, D

DSON

2.0

ON-RESISTANCE ( )

1.5

1.0

V = 2.5V

GS

I = 150mA

D

V = 4.5V

GS

I = 500mA

D

0.5

-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)

A

Fig. 6 On-Resistance Variation with Temperature

DMN26D0UDJ

Document number: DS31481 Rev. 8 - 2

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OUR

CE C

URRENT

C, CAPACITANC

F

GE CUR

RENT

NEW PRODUCT

DMN26D0UDJ

1.4

1.2

1.0

0.8

0.7

0.6

(A)

T = 25°C

A

0.5

0.8

I = 1mA

D

0.4

0.6

I = 250µA

D

0.4

0.2

GS(TH)

V , GATE THRESHOLD VOLTAGE (V)

0

-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)

A

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

20

f = 1MHz

15

)

C

iss

E (p

0.3

S

0.2

I, S

0.1

0

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6

V , SOURCE-DRAIN VOLTAGE (V)

SD

Fig. 8 Diode Forward Voltage vs. Current

10,000

1,000

T = 150°C

A

(nA)

T = 125°C

100

A

10

T = 85°C

A

10

5

0

C

oss

C

rss

0 5 10 15 20

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 9 Typical Total Capacitance

DSS

1

I, LEAKA

0.1
0 2 4 6 8 10 12 14 16 18 20

V , DRAIN-SOURCE VOLTAGE (V)

Fig. 10 Typical Leakage Current vs. Drain-Source Voltage

DS

T = 25°C

A

T = -55°C

A

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

DMN26D0UDJ

Document number: DS31481 Rev. 8 - 2

E1

A1

D

e1

L

Dim Min Max Typ

SOT963

A 0.40 0.50 0.45

E

A1 0 0.05 -

c 0.120 0.180 0.150
D 0.95 1.05 1.00
E 0.95 1.05 1.00

E1 0.75 0.85 0.80

e

b (6 places)

c

L 0.05 0.15 0.10
b 0.10 0.20 0.15
e 0.35 Typ

e1 0.70 Typ

A

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All Dimensions in mm

May 2014

© Diodes Incorporated

DMN26D0UDJ

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

NEW PRODUCT

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2014, Diodes Incorporated

www.diodes.com

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

Y1

Y (6X)

X (6X)

CC

Dimensions Value (in mm)

C 0.350
X 0.200
Y 0.200

Y1 1.100

IMPORTANT NOTICE

LIFE SUPPORT

DMN26D0UDJ

Document number: DS31481 Rev. 8 - 2

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