Diodes DMN2600UFB User Manual

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Features

• Low On-Resistance

• Low Gate Threshold Voltage

• Fast Switching Speed

• Ultra-Small Surface Mount Package

• Lead Free By Design/RoHS Compliant (Note 1)

• "Green" Device (Note 2)

• ESD Protected Gate 1kV

• Qualified to AEC-Q101 Standards for High Reliability

NEW PRODUCT

ESD PROTECTED TO 1kV

Bottom View

DFN1006-3

DMN2600UFB

25V N-CHANNEL ENHANCEMENT MODE MOSFET

Mechanical Data

• Case: DFN1006-3

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish – NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

• Weight: 0.001 grams (approximate)

Drain

Body
Diode

Source

D

Top View

Internal Schematic

S

G

Gate

Gate
Protection
Diode

E

uivalent Circuit

Ordering Information (Note 3)

Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel

DMN2600UFB-7 NA 7 8 3000

DMN2600UFB-7B

Notes: 1. No purposefully added lead

2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

NA

7 8 10,000

Marking Information

DMN2600UFB

Document number: DS31983 Rev. 4 - 2

DMN2600UFB-7 DMN2600UFB-7B

NANA

Top View

Dot Denotes

Drain Side

Top View

Bar Denotes Gate

and Source Side

1 of 6

www.diodes.com

NA = Product Type Marking Code

March 2011

© Diodes Incorporated

)

g

g

g

g

r

Maximum Ratings @T

Characteristic Symbol Value Unit

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 4)
Pulsed Drain Current

Thermal Characteristics @T

Characteristic Symbol Value Unit

Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient @T

NEW PRODUCT

Operating and Storage Temperature Range

= 25°C unless otherwise specified

A

T

Steady

State

= 25°C unless otherwise specified

A

= 25°C R

A

= 25°C

A

T

= 85°C

A

T

V
V

J

DSS
GSS

I

I

DM

P

, T

D

D

θJA

STG

DMN2600UFB

25 V
±8 V

1.3

0.9

A

3.0 A

0.54 W
234 °C/W

-55 to +150 °C

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C I
Gate-Source Leakage

BV

DSS

I

GSS

DSS

25 - - V

- - 1

- - 10

VGS = 0V, ID = 250μA

μA
μA

= 25V, VGS = 0V

V

DS

= ±8V, VDS = 0V

V

GS

ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y
V

fs

SD

0.45 - 1.0 V
350

- -

450
600

40 - - mS

|

- - 1.2 V

VDS = VGS, ID = 250μA
V

= 4.5V, ID = 200mA

mΩ

GS

V

= 2.5V, ID = 100mA

GS

V

= 1.8V, ID = 75mA

GS

VDS = 3V, ID = 200mA

VGS = 0V, IS = 300mA
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 4. Device mounted on FR-4 substrate PCB board, with minimum recommended pad layout.

5. Short duration pulse test used to minimize self-heating effect.

6. Guaranteed by design. Not subject to production testing.

C
C
C

R

Q
Q
Q

t

D(on)

t

D(off)

iss

oss

rss

t

t

s
d

f

- 70.13 -

- 7.56 -

- 5.59 -

- 72.3 -

- 0.85 -

- 0.16 -

- 0.11 -

- 4.1 -

- 11.5 -

- 34.8 -

- 20.9 -

pF
pF
pF

Ω
nC
nC
nC

= 15V, VGS = 0V,

V

DS

f = 1.0MHz
VDS =0V, VGS = 0V, f = 1MHz

= 4.5V, VDS = 15V,

V

GS

= 1A

I

D

ns

ns

ns

= 15V, RL=15Ω

V

DS

V

= 10V, RG = 6Ω

GS

ns

DMN2600UFB

Document number: DS31983 Rev. 4 - 2

2 of 6

www.diodes.com

March 2011

© Diodes Incorporated