Diodes DMN25D0UFA User Manual
Product Summary
I
V
R
(BR)DSS
25V
DS(on)
4 @ V
5 @ VGS = 2.7V
= 4.5V
GS
D
TA = +25°C
0.32A
0.28A
Description
This MOSFET has been designed to minimize the on-state resistance
(R
) and yet maintain superior switching performance, making it
DS(ON)
ideal for high efficiency power management applications.
Applications
• Load switch
• Portable applications
• Power Management Functions
ESD HBM >6kV
X2-DFN0806-3
Bottom View
DMN25D0UFA
25V N-CHANNEL ENHANCEMENT MODE MOSFET
Features
• 0.4mm ultra low profile package for thin application
• 0.48mm
• Low V
• Low R
• ESD Protected Gate (>6kV Human Body Mode)
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
2
package footprint, 16 times smaller than SOT23
can be driven directly from a battery
GS(th),
DS(on)
Mechanical Data
• Case: X2-DFN0806-3
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
• Weight: 0.00043 grams (approximate)
Top View
Package Pin Configuration
e4
Gate
Gate
Protection
Diode
Equivalent Circuit
Drain
Body
Diode
Source
Ordering Information (Note 4)
Part Number Compliance Case Packaging
DMN25D0UFA-7B Standard X2-DFN0806-3 10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
DMN25D0UFA
Document number: DS36253 Rev. 1 - 2
DMN25D0UFA-7B
56
Top View
Bar Denotes Gate
and Source Side
56 = Product Type Marking Code
1 of 6
www.diodes.com
February 2014
© Diodes Incorporated
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage
(Note 6)
T
Continuous Drain Current, VGS = 4.5V
= +70°C (Note 6)
A
(Note 5)
Pulsed Drain Current (Note 7)
Thermal Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Power Dissipation
Thermal Resistance, Junction to Ambient
(Note 6)
(Note 5) 0.28
(Note 6)
(Note 5) 338
Operating and Storage Temperature Range
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
DMN25D0UFA
V
DSS
V
GSS
I
D
I
D
I
DM
P
D
R
JA
T
, T
J
STG
25
8
0.32
0.25
V
A
0.24 A
1.2 A
0.63
201
W
°C/W
-55 to +150 °C
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV
I
DSS
I
GSS
DSS
25
—
— —
—
—
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V
R
GS(th)
DS(on)
|Y
fs
V
SD
0.6
—
—
—
|
—
—
—
—
1 - S
0.76 1.2 V
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
C
C
C
R
Q
Q
Q
t
D(on)
t
D(off)
iss
oss
rss
gd
t
t
g
g
gs
r
f
— 27.9 —
— 6.1 —
— 2 —
— 26.4 —
— 0.36 —
— 0.06 —
— 0.04 —
— 2.9 —
— 1.8 —
— 6.6 —
— 2.3 —
DMN25D0UFA
Document number: DS36253 Rev. 1 - 2
2 of 6
www.diodes.com
— V
1 µA
100 nA
1.2 V
4
5
VGS = 0V, ID = 250A
VDS = 20V, VGS = 0V
VGS = 8V, VDS = 0V
VDS = VGS, ID = 250A
V
V
VDS = 5V, ID = 0.4A
VGS = 0V, IS = 0.29A
pF
VDS = 10V, VGS = 0V,
pF
f = 1MHz
pF
VDS = 0V, VGS = 0V, f = 1MHz
nC
V
nC
I
nC
ns
ns
V
I
ns
ns
= 4.5V, ID = 0.4A
GS
= 2.7V, ID = 0.2A
GS
= 5V, VGS = 4.5V,
DS
= 0.2A
D
= 6V, VGS = 4.5V,
DS
= 0.5A, R
D
= 50
G
February 2014
© Diodes Incorporated
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