Diodes DMN2501UFB4 User Manual

DMN2501UFB4

N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

V

Description and Applications

This new generation MOSFET has been designed to minimize the onstate resistance (R performance, making it ideal for high efficiency power management applications.

• DC-DC Converters

• Power management functions

ADVANCE INFORMATION

R

(BR)DSS

20V

DS(on)

ESD PROTECTED

= 4.5V

GS

X2-DFN1006-3

Bottom View

DS(on) max

0.4Ω @ V

0.5Ω @ VGS = 2.5V

0.7Ω @ VGS = 1.8V

) and yet maintain superior switching

I

D

TA = 25°C

1.5A

1.3A

1.1A

Features and Benefits

• Low On-Resistance

• Very Low Gate Threshold Voltage V

• Low Input Capacitance

• Fast Switching Speed

• Ultra-Small Surfaced Mount Package

• Ultra-low package profile, 0.4mm maximum package height

• ESD Protected Gate

• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

GS(TH)

, 1.0V max

Mechanical Data

• Case: X2-DFN1006-3

• Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish – NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

• Weight: 0.001 grams (approximate)

S

D

G

Top View

Internal Schematic

e4

Gate

Gate Protection Diode

Equivalent Circuit

Drain

Source

Body Diode

Ordering Information (Note 4)

Part Number Case Packaging

DMN2501UFB4-7 X2-DFN1006-3 3,000/Tape & Reel

DMN2501UFB4-7B X2-DFN1006-3 10,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green" and Lead-Free.

3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

DMN2501UFB4

Document number: DS35824 Rev. 3 - 2

DMN2501UFB4-7 DMN2501UFB4-7B

TNTN

Top View

Dot Denotes

Drain Side

Top View

Bar Denotes Gate

and Source Side

1 of 6

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TN = Product Type Marking Code

August 2012

)

g

r

DMN2501UFB4

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = 4.5V

Continuous Drain Current (Note 6) VGS = 4.5V

Pulsed Drain Current (10μs pulse, duty cycle = 1%) Maximum Body Diode continuous Current

Steady

State t<10s

Steady

State t<10s

T

= 25°C

A

= 70°C

T

A

= 25°C

T

A

T

= 70°C

A

T

= 25°C

A

= 70°C

T

A

= 25°C

T

A

T

= 70°C

A

V

DSS

V

GSS

I

D

I

D

I

D

I

D

I

DM

I

S

20 V ±8 V

1.0

0.8

1.2

0.9

1.5

1.2

1.8

1.4

A

6 A 1 A

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

T

= 25°C

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

ADVANCE INFORMATION

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6) Operating and Storage Temperature Range

A

TA = 70°C

Steady state

t<10s 188

= 25°C

T

A

TA = 70°C

Steady state

t<10s 82

P

R

P

R

T

J, TSTG

D

JA

θ

D

JA

θ

0.5

0.3

251

1.2

0.7

110

W

°C/W

W

°C/W

-55 to +150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C I Gate-Source Leakage

BV

DSS

I

GSS

DSS

20 - - V

- - 100 nA

- - ±1

VGS = 0V, ID = 250μA VDS = 20V, VGS = 0V

μA

VGS = ±6V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y V

fs

SD

0.5 0.76 1.0 V 170 400

-

200 500 260 700

|

- 1.4 - S

0.7 1.2 V

VDS = VGS, ID = 250μA V

= 4.5V, ID = 600mA

mΩ

GS

= 2.5V, ID = 500mA

V

GS

= 1.8V, ID = 350mA

V

GS

VDS = 10V, ID = 400mA

VGS = 0V, IS = 150mA DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate resistance

C

iss

C

oss

C

rss

R Total Gate Charge (VGS = 4.5V) Qg Total Gate Charge (VGS = 10V) Qg Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

Q Q

t

D(on)

t

D(off)

s d

t

f

- 82 -

- 12 -

- 10 -

- 83 -

- 1.1 -

- 2.0 -

- 0.14 -

- 0.19 -

6.6

-

6.4

-

40.4

-

17.3

-

pF

V

pF pF

Ω

DS

f = 1.0MHz

VDS = 0V, VGS = 0V, f = 1.0MHz nC nC

V nC

DS

nC

- ns

V

DD

R

L

I

= 200mA

D

=16V, VGS = 0V,

= 10V, ID = 250mA

= 10V, VGS = 4.5V,

= 47Ω, RG = 10Ω,

DMN2501UFB4

Document number: DS35824 Rev. 3 - 2

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August 2012

R

C

URRENT

RAIN CUR

REN

T

R

OUR

ON-R

R

OUR

CE ON-R

TANC

R

OUR

ON-R

R

OUR

C

DMN2501UFB4

2.0

V= 8.0V

1.8

1.6

1.4

(A)

GS

V= 4.5V

GS

V= 2.5V

GS

V= 2.0V

GS

1.2

V= 1.5V

GS

AIN

D

I, D

1.0

0.8

0.6

0.4

0.2 0

0 0.5 1.0 1.5 2.0 2.5 3.0

V , DRAIN-SOURCE VOLTAGE (V)

DS

V= 1.2V

GS

Fig. 1 Typical Output Characteri st ic

0.50

Ω

0.45

ADVANCE INFORMATION

0.40

0.35

ESISTANCE ( )

0.30

20

V= 5.0V

DS

16

(A)

12

T = 150°C

8

D

I, D

4

0

0 0.4 0.8 1.2 1.6 2.0

V , GATE-SOURCE VOLTAGE (V)

GS

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

Fig. 2 Typical Transfer Characteristics

1.0

Ω

0.9

E ( )

0.8

I = 500mA

I = 350mA

D

0.7

ESIS

0.6

D

I = 600mA

D

CE

0.25

V = 1.8V

GS

0.20

0.15

AIN-S

0.10

, D

0.05

DS(ON)

0

0 0.4 0.8 1.2 1.6 2.0

I , DRAIN-SOURCE CURRENT (A)

D

V = 2.5VGS

V = 4.5VGS V = 8.0VGS

Fig. 3 Typical On-Resistance vs.

Drain Current and Gate Volta ge

0.30

Ω

V = 4.5VGS

0.25

T = 150°C

A

0.20

ESISTANCE ( )

CE

0.15

0.10

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

AIN-S , D

0.05

0.5

0.4

0.3

AIN-S

0.2

, D

0.1

DS(ON)

0

0123456

V , GATE-SOURCE VOLTAGE (V)

GS

Fig. 4 Typical Drain-S ource On-Resistance

vs. Gate- Source Volt age

1.8

1.6

E

AIN-S , D

1.4

1.2

1.0

DS(ON)

ON-RESISTANCE (NORMALIZED)

0.8

V=V

4.5

GS

I= 1.0A

D

V=V

GS

I= 1A

8.0

D

DS(ON)

0

04 8121620

I , DRAIN CURRENT (A)

D

Fig. 5 Typical On-Resistance vs.

Drain Curr ent and Temperature

0.6

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)

J

°

Fig. 6 On-Resistance Variation with T emperature

DMN2501UFB4

Document number: DS35824 Rev. 3 - 2

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August 2012

R

RAIN-SOUR

CE O

N-R

TAN

C

GATE THR

H

O

OLTAG

OUR

CE CUR

RENT

C

UNC

TION CAPACITANC

GAT

T

H

RESH

O

OLT

G

R

CUR

RENT

DMN2501UFB4

0.25

Ω

1.2

E ( )

1.0

V =4.5V

0.20

GS

I = 1.0A

D

ESIS

0.15

V=V

8.0

GS

I= 1A

D

E (V)

LD V

ES

0.8

0.6

I = 250µA

D

I= 1mA

D

0.10

0.4

0.05

, D

DS(ON)

0

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)

J

Fig. 7 On-Resistance Variation with Temperature

2.0

°

0.2

GS(th)

V,

0

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)

J

°

Fig. 8 Gate Threshold Variation vs. Ambient Temperature

1,000

1.8

ADVANCE INFORMATION

1.6

(A)

1.4

1.2

T = 150°C

A

E (pF)

100

C

iss

1.0

T = 125°C

A

T= 85°C

A

T= 25°C

A

T = -55°C

A

S

I, S

0.8

0.6

0.4

0.2 0

0 0.3 0.6 0.9 1.2 1.5

V , SOURCE-DRAIN VOLTAGE (V)

SD

Fig. 9 Diode Forwa r d Voltage vs. Cur r e nt

8

10

, J

T

f = 1MHz

1

0 2 4 6 8 101214161820

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 10 Typical Junction Capacitance

100

C

oss

C

rss

7

E (V)

6

A

5

LD V

4

3

E

2

GS

1

V

0

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

Q(nC)

, TOT AL GATE CHARGE

g

V = 10V

DS

I= A

250m

D

Fig. 11 Gate Charge

10

P = 10sWµ

(A)

R

DS(on)

Limited

1

AIN

D

I, D

0.1

T = 150°C

J(max)

T = 25°C

A

V = 8V

GS

Single Pulse DUT on 1 * MRP Board

0.01

0.01 0.1 1 10 100 V , DRAIN-SOURCE VOLTAGE (V)

DS

DC

P = 10s

W

P = 1s

W

P = 100ms

W

P = 10ms

W

P = 1ms

W

P = 100µs

W

Fig. 12 SOA, Safe Operation Area

DMN2501UFB4

Document number: DS35824 Rev. 3 - 2

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August 2012

T

R

T T

HER

R

TANC

DMN2501UFB4

1

D = 0.9 D = 0.7

E

D = 0.5 D = 0.3

ESIS

0.1

D = 0.1

MAL

D = 0.05

D = 0.02

0.01

D = 0.01

ANSIEN

D = 0.005

D = Single Pulse

r(t),

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000

R (t) = r(t) * R

θθ

JA JA

R = 251°C/W

θ

JA

Duty Cycle, D = t1/ t2

t1, PULSE DURATION TIME (sec)

Fig. 13 Transient Thermal Resistance

Package Outline Dimensions

ADVANCE INFORMATION

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

A

X2-DFN1006-3

Dim Min Max Typ

A1

A

D

A1 0 0.05 0.03 b1 0.10 0.20 0.15

⎯

0.40

⎯

b2 0.45 0.55 0.50

D 0.95 1.05 1.00

b1

b2

E

e

E 0.55 0.65 0.60 e

⎯ ⎯

0.35

L1 0.20 0.30 0.25 L2 0.20 0.30 0.25 L3

⎯ ⎯

0.40

All Dimensions in mm

L2

L1L3

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

X

1

G2

X

DMN2501UFB4

Document number: DS35824 Rev. 3 - 2

C

Dimensions Value (in mm)

Z 1.1 G1 0.3 G2 0.2

X 0.7

X1 0.25

G1

Y

Z

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Y 0.4 C 0.7

August 2012

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document o r products described herein in such applica tions shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

ADVANCE INFORMATION

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

www.diodes.com

IMPORTANT NOTICE

LIFE SUPPORT

DMN2501UFB4

Document number: DS35824 Rev. 3 - 2

6 of 6

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August 2012