Diodes DMN2501UFB4 User Manual

DMN2501UFB4

N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

V

Description and Applications

This new generation MOSFET has been designed to minimize the on­state resistance (R
performance, making it ideal for high efficiency power management
applications.

• DC-DC Converters

• Power management functions

ADVANCE INFORMATION

R

(BR)DSS

20V

DS(on)

ESD PROTECTED

= 4.5V

GS

X2-DFN1006-3

Bottom View

DS(on) max

0.4Ω @ V

0.5Ω @ VGS = 2.5V

0.7Ω @ VGS = 1.8V

) and yet maintain superior switching

I

D

TA = 25°C

1.5A

1.3A

1.1A

Features and Benefits

• Low On-Resistance

• Very Low Gate Threshold Voltage V

• Low Input Capacitance

• Fast Switching Speed

• Ultra-Small Surfaced Mount Package

• Ultra-low package profile, 0.4mm maximum package height

• ESD Protected Gate

• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

GS(TH)

, 1.0V max

Mechanical Data

• Case: X2-DFN1006-3

• Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish – NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

• Weight: 0.001 grams (approximate)

S

D

G

Top View

Internal Schematic

e4

Gate

Gate
Protection
Diode

Equivalent Circuit

Drain

Source

Body
Diode

Ordering Information (Note 4)

Part Number Case Packaging

DMN2501UFB4-7 X2-DFN1006-3 3,000/Tape & Reel

DMN2501UFB4-7B X2-DFN1006-3 10,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green"
and Lead-Free.

3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

DMN2501UFB4

Document number: DS35824 Rev. 3 - 2

DMN2501UFB4-7 DMN2501UFB4-7B

TNTN

Top View

Dot Denotes

Drain Side

Top View

Bar Denotes Gate

and Source Side

1 of 6

www.diodes.com

TN = Product Type Marking Code

August 2012

© Diodes Incorporated

)

g

g

g

r

DMN2501UFB4

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = 4.5V

Continuous Drain Current (Note 6) VGS = 4.5V

Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Maximum Body Diode continuous Current

Steady

State
t<10s

Steady

State
t<10s

T

= 25°C

A

= 70°C

T

A

= 25°C

T

A

T

= 70°C

A

T

= 25°C

A

= 70°C

T

A

= 25°C

T

A

T

= 70°C

A

V

DSS

V

GSS

I

D

I

D

I

D

I

D

I

DM

I

S

20 V
±8 V

1.0

0.8

1.2

0.9

1.5

1.2

1.8

1.4

A

A

A

A

6 A
1 A

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

T

= 25°C

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

ADVANCE INFORMATION

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range

A

TA = 70°C

Steady state

t<10s 188

= 25°C

T

A

TA = 70°C

Steady state

t<10s 82

P

R

P

R

T

J, TSTG

D

JA

θ

D

JA

θ

0.5

0.3

251

1.2

0.7

110

W

°C/W

W

°C/W

-55 to +150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C I
Gate-Source Leakage

BV

DSS

I

GSS

DSS

20 - - V

- - 100 nA

- - ±1

VGS = 0V, ID = 250μA
VDS = 20V, VGS = 0V

μA

VGS = ±6V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y
V

fs

SD

0.5 0.76 1.0 V
170 400

-

200 500
260 700

|

- 1.4 - S

0.7 1.2 V

VDS = VGS, ID = 250μA
V

= 4.5V, ID = 600mA

mΩ

GS

= 2.5V, ID = 500mA

V

GS

= 1.8V, ID = 350mA

V

GS

VDS = 10V, ID = 400mA

VGS = 0V, IS = 150mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance

C

iss

C

oss

C

rss

R
Total Gate Charge (VGS = 4.5V) Qg
Total Gate Charge (VGS = 10V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

Q
Q

t

D(on)

t

D(off)

s
d

t

t

f

- 82 -

- 12 -

- 10 -

- 83 -

- 1.1 -

- 2.0 -

- 0.14 -

- 0.19 -

6.6

-

6.4

-

40.4

-

17.3

-

pF

V

pF
pF

Ω

DS

f = 1.0MHz

VDS = 0V, VGS = 0V, f = 1.0MHz
nC
nC

V
nC

DS

nC

- ns

- ns

- ns

- ns

V

DD

R

L

I

= 200mA

D

=16V, VGS = 0V,

= 10V, ID = 250mA

= 10V, VGS = 4.5V,

= 47Ω, RG = 10Ω,

DMN2501UFB4

Document number: DS35824 Rev. 3 - 2

2 of 6

www.diodes.com

August 2012

© Diodes Incorporated