Diodes DMN2500UFB4 User Manual

DMN2500UFB4

N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

I

V

(BR)DSS

20V

R

0.4Ω @ V

0.7Ω @ VGS = 1.8V

DS(on) max

= 4.5V

GS

D

TA = 25°C

1A

0.8A

Description and Applications

This new generation MOSFET has been designed to minimize the on­state resistance (R
performance, making it ideal for high efficiency power management
applications.

• DC-DC Converters

• Power management functions

ADVANCE INFORMATION

ESD PROTECTED

) and yet maintain superior switching

DS(on)

X2-DFN1006-3

Bottom View

Features and Benefits

• Low On-Resistance

• Very Low Gate Threshold Voltage V

• Low Input Capacitance

• Fast Switching Speed

• Ultra-Small Surfaced Mount Package

• Ultra-low package profile, 0.4mm maximum package height

• ESD Protected Gate

• Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1)

• "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

GS(TH)

, 1.0V max

Mechanical Data

• Case: X2-DFN1006-3

• Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish – NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

• Weight: 0.001 grams (approximate)

Drain

S

D

G

Top View

Internal Schematic

Gate

Gate
Protection
Diode

EQUIVALENT CIRCUIT

Source

Ordering Information (Note 3)

Part Number Case Packaging

DMN2500UFB4-7 X2-DFN1006-3 3,000/Tape & Reel

DMN2500UFB4-7B X2-DFN1006-3 10,000/Tape & Reel

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free

2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

DMN2500UFB4

Document number: DS35724 Rev. 3 - 2

DMN2500UFB4-7 DMN2500UFB4-7B

NTNT

Top View

Dot Denotes

Drain Side

Top View

Bar Denotes Gate

and Source Side

1 of 5

www.diodes.com

NT = Product Type Marking Code

March 2012

© Diodes Incorporated

)

g

g

g

g

r

DMN2500UFB4

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 4) VGS = 4.5V

Continuous Drain Current (Note 5) VGS = 4.5V

Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Maximum Body Diode continuous Current

Steady

State
t<10s

Steady

State
t<10s

T

= 25°C

A

T

= 70°C

A

= 25°C

T

A

= 70°C

T

A

T

= 25°C

A

T

= 70°C

A

= 25°C

T

A

= 70°C

T

A

V

DSS

V

GSS

I

D

I

D

I

D

I

D

I

DM

I

S

20 V
±6 V

810
640

950
750

1000

800

1200
1000

mA

mA

mA

mA

4 A

850 mA

Thermal Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

T

= 25°C

Total Power Dissipation (Note 4)

ADVANCE INFORMATION

Thermal Resistance, Junction to Ambient (Note 4)

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range

A

TA = 70°C

Steady state

t<10s 210 °C/W

T

= 25°C

A

TA = 70°C

Steady state

t<10s 100 °C/W

P

R

P

R

T

J, TSTG

D

JA

θ

D

JA

θ

0.46

0.29

W

279 °C/W

0.95

0.6

W

134 °C/W

-55 to +150 °C

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C I
Gate-Source Leakage

BV

DSS

I

GSS

DSS

20 - - V

- - 100 nA

- - ±1.0

VGS = 0V, ID = 250μA
VDS = 20V, VGS = 0V

μA

= ±4.5V, VDS = 0V

V

GS

ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y
V

fs

SD

0.5 - 1.0 V

0.3 0.4

-

0.4 0.5

0.5 0.7

|

- 1.4 - S

0.7 1.2 V

VDS = VGS, ID = 250μA
V

= 4.5V, ID = 600mA

Ω

GS

= 2.5V, ID = 500mA

V

GS

= 1.8V, ID = 350mA

V

GS

VDS = 10V, ID = 400mA

VGS = 0V, IS = 150mA
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

Gate resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to product testing.

DMN2500UFB4

Document number: DS35724 Rev. 3 - 2

C

iss

C

oss

C

rss

R
Q

Q

s

Q

d

t

D(on)

t

t

D(off)

t

f

www.diodes.com

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- 9.68 -

- 5.37 -

- 93 -

- 736.6 -

- 93.6 -

- 116.6 -

5.1

-

7.4

-

26.7

-

12.3

-

2 of 5

pF

V

pF
pF

Ω
pC
pC
pC

- ns

- ns

- ns

- ns

DS

f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz
V

GS

= 250mA

I

D

V

DD

R

L

I

= 200mA

D

=16V, VGS = 0V,

= 4.5V, VDS = 10V,

= 10V, VGS = 4.5V,

= 47Ω, RG = 10Ω,

© Diodes Incorporated

March 2012