Diodes DMN24H11DS User Manual

DMN24H11DS

N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

V

R

(BR)DSS

240V

11 @ V

12 @ VGS = 4.5V

DS(ON)

GS

= 10V

TA = +25°C

0.27A

0.26A

Description

This new generation MOSFET has been designed to minimize the

on-state resistance (R

performance, making it ideal for high efficiency power management

applications.

) and yet maintain superior switching

DS(ON)

Applications

 DC-DC Converters

 Power management functions

 Battery Operated Systems and Solid-State Relays

 Drivers: Relays, Solenoids, Lamps, Hammers, Displays,

Memories, Transistors, etc

ADVANCED INFORMATION

Top View

I

D

Pin Configuration

G

Top View

Features and Benefits

 Low Gate Threshold Voltage

 Low Input Capacitance

 Fast Switching Speed

 Small Surface Mount Package

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SOT23

 Case Material: Molded Plastic. UL Flammability Classification

Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals: Solderable per MIL-STD-202, Method 208

 Lead Free Plating (Matte Tin Finish annealed over Alloy 42

leadframe).

 Terminal Connections: See Diagram

 Weight: 0.006 grams (approximate)



D

D



G

S

S

Equivalent Circuit

Ordering Information (Note 4)

Part Number Case Packaging

DMN24H11DS-7 SOT23 3,000/Tape & Reel

DMN24H11DS-13 SOT23 10,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year 2011 2012 2013 2014 2015 2016 2017

Code Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

4H1

4H1

DMN24H11DS

Document number: DS37092 Rev. 3 - 2

4H1 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)

1 of 6

www.diodes.com

e3

April 2014

© Diodes Incorporated

DMN24H11DS

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (Note 6) VGS = 10V

Steady

State

T

= +25°C

A

= +70°C

T

A

V

DSS

V

GSS

I

D

Pulsed Drain Current (10s pulse, duty cycle ≦1%) IDM

Maximum Body Diode Continuous Current (Note 5)

I

S

240 V

±20 V

0.27

0.22

0.8 A

0.8 A

Peak diode recovery dv/dt dv/dt 6.0 V/ns

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Total Power Dissipation

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

Operating and Storage Temperature Range

ADVANCED INFORMATION

(Note 5)

(Note 6) 1.2

(Note 5)

(Note 6) 104

(Note 6)

P

R

R

T

J, TSTG

D

JA

JC

0.75

166

35

-55 to +150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage

BV

I

I

DSS

GSS

240

DSS

 

 

 

100 nA

±100 nA

V

V

= 0V, ID = 250µA

GS

V

= 240V, V

DS

V

±20V, V

GS =

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Diode Forward Voltage

V

GS(th)

R

DS (ON)

V

SD

1.0 2.0 3.0 V







3.7 11

4.0 12

0.7 1.2 V

V

= VGS, ID = 250µA

DS

V

= 10V, ID = 0.3A

GS



V

= 4.5V, ID = 0.2A

GS

VGS = 0V, IS = 0.1A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Reverse Recovery Time

Reverse Recovery Charge Q

Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout
7 .Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

C

C

C

R

Q

Q

Q

t

D(on)

t

D(off)

t

iss

oss

rss

gd

t

t

rr

G

gs

r

f

rr











g

















76.8

6.9

4.1

17

3.7

0.3

2.1

4.8

4.7

17.5

102.3

45.6

51.6



























VDS = 25V, VGS = 0V,

pF

f = 1.0MHz



VDS = 0V, VGS = 0V, f = 1.0MHz

V

= 192V, VGS = 10V,

DS

nC

nS

nS

nC

= 0.1A

I

D

= 120V, I

V

DS

= 10V, RG = 6.0

V

GS

V

= 100V, IF = 1.0A,

R

di/dt = 100A/µs

DMN24H11DS

Document number: DS37092 Rev. 3 - 2

2 of 6

www.diodes.com

= 0V

GS

= 0V

DS

= 0.1A,

D

© Diodes Incorporated

A

W

°C/W

April 2014