Diodes DMN2400UV User Manual
DMN2400UV
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• ESD Protected up to 2kV
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 standards for High Reliability
ESD PROTECTED TO 2kV
Top View
SOT-563
Mechanical Data
• Case: SOT-563
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Weight: 0.006 grams (approximate)
S
G
Bottom View
D
2
G
S
2
Top View
Internal Schematic
1
1
D
1
2
Ordering Information (Note 3)
Part Number Case Packaging
DMN2400UV-7 SOT-563 3,000/Tape & Reel
DMN2400UV-13 SOT-563 10,000/Tape & Reel
Notes: 1. No purposefully added lead.
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
24N
YM
NAB
YM
24N and NAB = Marking Code
YM = Date Code Marking
Y = Year (ex: W = 2009)
M = Month (ex: 9 = September)
Date Code Key
Year 2009 2010 2011 2012 2013 2014 2015
Code W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
DMN2400UV
Document number: DS31852 Rev. 7 - 2
1 of 6
www.diodes.com
January 2011
© Diodes Incorporated
θ
)
g
g
g
g
r
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 4)
Pulsed Drain Current
Thermal Characteristics @T
Characteristic Symbol Value Units
Total Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
= 25°C
Steady
State
= 25°C unless otherwise specified
A
T
A
= 85°C
T
A
V
V
I
R
T
J, TSTG
DSS
GSS
I
DM
P
DMN2400UV
D
D
JA
20 V
±12 V
1.33
0.84
A
3 A
530 mW
233.8 °C/W
-55 to +150 °C
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C I
Gate-Source Leakage
BV
DSS
I
GSS
DSS
20 - - V
- - 100 nA
- - ±1.0
- - ±50
VGS = 0V, ID = 250μA
VDS = 20V, VGS = 0V
V
= ±4.5V, VDS = 0V
μA
GS
V
= ±10V, VDS = 0V
GS
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
V
GS(th
R
DS (ON)
|Y
V
fs
SD
0.5 - 0.9 V
- 0.3 0.48
- 0.35 0.5
- 0.45 0.7
- 0.55 0.9
- 0.65 1.5
|
- 1.4 - S
0.7 1.2 V
VDS = VGS, ID = 250μA
V
= 5.0V, ID = 200mA
GS
= 4.5V, ID = 600mA
V
Ω
GS
= 2.5V, ID = 500mA
V
GS
= 1.8V, ID = 350mA
V
GS
= 1.5V, ID = 50mA
V
GS
VDS = 10V, ID = 400mA
= 0V, IS = 150mA,
V
GS
f = 1.0MHz
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes: 4. Device soldered onto FR-4 PCB, minimum recommended soldering pad dimensions (25.4mm x 25.4mm x1.6mm, 2oz Cu pad: 0.18mm2 x 6).
5. Short duration pulse test used to minimize self-heating effect.
6. Guaranteed by design. Not subject to product testing.
C
C
C
R
Q
Q
Q
t
D(on)
t
D(off)
iss
oss
rss
t
t
s
d
f
- 36.0 -
- 5.7 -
- 4.2 -
- 68 -
- 0.5 -
- 0.07 -
- 0.1 -
4.06
-
7.28
-
13.74
-
10.54
-
pF
V
pF
pF
Ω
nC
nC
nC
- ns
- ns
- ns
- ns
DS
f = 1.0MHz
VDS = 0V, VGS = 0V,
V
GS
I
=250mA
D
V
DD
R
L
= 200mA
I
D
=16V, VGS = 0V,
=4.5V, VDS = 10V,
= 10V, VGS = 4.5V,
= 47Ω, RG = 10Ω,
DMN2400UV
Document number: DS31852 Rev. 7 - 2
2 of 6
www.diodes.com
January 2011
© Diodes Incorporated
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