Product Summary
I
V
R
(BR)DSS
0.6 @ V
20V
0.8 @ VGS = 2.5V
1.0 @ VGS = 1.8V
1.6 @ VGS = 1.5V
Package
DS(ON)
= 4.5V
GS
X1-DFN1212-3
D
TA = +25°C
0.9A
0.7A
0.5A
0.3A
Description
This new generation MOSFET has been designed to minimize the onstate resistance (R
performance, making it ideal for high efficiency power management
applications.
) and yet maintain superior switching
DS(on)
Applications
• Power management functions
• Battery Operated Systems and Solid-State Relays
• Load switch
ESD PROTECTED
Top View Bottom View Equivalent Circuit Pin-out Top view
DMN2400UFD
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
• Low On-Resistance
• Very low Gate Threshold Voltage, 1.0V max
• Low Input Capacitance
• Fast Switching Speed
• ESD Protected Gate
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
• Case: X1-DFN1212-3
• Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Weight: 0.005 grams (approximate)
Gate
Gate
Protection
Diode
Drain
Source
Body
Diode
Ordering Information (Note 4)
Part Number Case Packaging
DMN2400UFD-7 X1-DFN1212-3 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017
Code U V W X Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
K24
DMN2400UFD
Document number: DS35475 Rev. 4 - 2
K24 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
YM
M = Month (ex: 9 = September)
1 of 6
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July 2012
© Diodes Incorporated
θ
θ
θ
)
g
g
g
g
r
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) VGS = 4.5V
Continuous Drain Current (Note 6) VGS = 2.5V
Pulsed Drain Current (10s pulse, duty cycle = 1%)
Maximum Body Diode Forward Current (Note 6)
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
Steady
State
Steady
State
T
= +25°C
A
= +70°C
T
A
T
= +25°C
A
T
= +70°C
A
Steady state
Steady state
DMN2400UFD
V
DSS
V
GSS
I
D
I
D
I
DM
I
S
P
D
R
JA
P
D
R
JA
R
Jc
T
J, TSTG
20 V
±12 V
0.9
0.7
0.7
0.5
A
A
3.0 A
0.8 A
0.4 W
280 °C/W
0.8 W
140 °C/W
112 °C/W
-55 to +150 °C
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C I
Gate-Source Leakage
BV
DSS
I
GSS
DSS
20 — — V
—
—
— — ±1.0
80
100
VGS = 0V, ID = 250A
= 4.5V, VGS = 0V
V
nA
μA
DS
= 20V, VGS = 0V
V
DS
VGS = ±4.5V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V
GS(th
R
DS (ON)
|Y
V
fs
SD
0.45 — 1.0 V
— 0.35 0.6
— 0.45 0.8
— 0.6 1.0
— 0.7 1.6
— 1.4 — S
|
— 0.7 1.2 V
VDS = VGS, ID = 250A
V
= 4.5V, ID = 200mA
GS
= 2.5V, ID = 200mA
V
GS
= 1.8V, ID = 100mA
V
GS
= 1.5V, ID = 50mA
V
GS
VDS = 3V, ID = 200mA
VGS = 0V, IS = 500mA,
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
8. Guaranteed by design. Not subject to production testing.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate.
7 .Short duration pulse test used to minimize self-heating effect.
DMN2400UFD
Document number: DS35475 Rev. 4 - 2
C
iss
C
oss
C
rss
R
Q
Q
s
Q
d
t
D(on)
t
t
D(off)
t
f
www.diodes.com
— 37.0 — pF
— 5.7 — pF
— 4.2 — pF
— 68 —
— 0.5 — nC
— 0.07 — nC
— 0.1 — nC
— 4.06 — ns
— 7.28 — ns
— 13.74 — ns
— 10.54 — ns
2 of 6
=16V, VGS = 0V,
V
DS
f = 1.0MHz
VDS = 0V, VGS = 0V,
V
= 4.5V, VDS = 10V,
GS
= 250mA
I
D
= 10V, VGS = 4.5V,
V
DD
= 47, RG = 10,
R
L
I
= 200mA
D
© Diodes Incorporated
July 2012
R
N C
U
R
R
N
T
R
CUR
RENT
R
RAIN-SOUR
CE O
N-R
TAN
C
R
R
OUR
C
R
R
N
OUR
C
O
N-R
TAN
C
DMN2400UFD
2.0
1.5
V = 4.5V
GS
V = 2.5V
GS
V = 2.0V
GS
(A)
E
1.0
V = 1.8V
GS
AI
D
I, D
0.5
0
012345
V , DRAIN-SOURCE VOLTAGE (V)
DS
V = 1.5V
GS
V = 1.2V
GS
Fig. 1 Typical Output Characteristics
2.0
Ω
1.5
V = 5V
DS
(A)
1.0
AIN
0.5
D
I, D
0
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
0 0.5 1 1.5 2 2.5 3
V , GATE SOURCE VOLT AGE (V)
GS
Fig. 2 Typical Transfer Characteristics
0.8
Ω
E ( )
V = 4.5V
GS
1.6
0.6
V = 1.5V
1.2
GS
0.8
V = 1.8V
GS
0.4
V = 4.5V
V = 5.0V
DS(ON)
R , DRAIN-SOURCE ON-RESISTANCE ( )
0
0 0.4 0.8 1.2 1.6 2
GS
I , DRAIN-SOURCE CURRENT (A)
D
Fig. 3 Typical On-Resistance
GS
vs. Drain C urrent and G ate V oltage
1.6
V = 4.5V
GS
I = 1.0A
1.4
D
E
1.2
AIN-S
, D
1.0
DS(ON)
0.8
ON-RE SISTANCE (NO RMALI ZED)
V = 2.5V
GS
V = 2.5.V
GS
I = 500mA
D
ESIS
0.4
0.2
, D
DS(ON)
0
0 0.4 0.8 1.2 1.6
I , DRAIN CURRENT (A)
D
Fig. 4 Typical Drain-Sou r ce O n-Resist ance
0.8
Ω
vs. Drain Current and Temperature
E ( )
0.6
ESIS
0.4
V = 2.5V
GS
I = 500mA
D
E
-S
AI
0.2
V = 4.5V
GS
I = 1.0A
, D
D
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
0.6
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
Fig. 5 On-Resistance Variation with T emperature
DS(ON)
0
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
Fig. 6 On-Resistance Variation with Temperature
DMN2400UFD
Document number: DS35475 Rev. 4 - 2
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July 2012
© Diodes Incorporated
OUR
C
CUR
R
T
C, CAPACITAN
C
F
R
OUR
C
GE CUR
RENT
1.2
1.6
DMN2400UFD
1.0
T = 25°C
A
0.8
0.6
I = 250µA
D
I = 1mA
D
(A)
EN
E
1.2
0.8
0.4
S
0.4
I, S
0.2
GS(TH)
V , GATE THRESHOLD VOLTAGE (V)
0
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
Fig. 7 Gate Threshold Variation vs. Ambient T emperature
60
50
f = 1MHz
)
40
E (p
C
iss
30
0
0.2
0 0.4 0.6 0.8 1.0 1.2
V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 8 Dio de Forwar d Voltag e vs. Curre nt
1,000
(nA)
100
T = 150°C
A
T = 125°C
A
10
E LEAKA
T = 85°C
A
20
T = -55°C
1
10
0
0 5 10 15 20
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 9 Typical Capacitance
C
oss
C
rss
5
AIN-S
0.1
DSS
I, D
2 4 6 8 10 12 14 16 18 20
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 10 Typical Drain-Source Leakage Current
vs. Drain-S ource Volta ge
A
T = 25°C
A
4
V = 10V
DS
I = 250mA
D
3
2
1
GS
V , GATE-SOURCE VOLTAGE (V)
0
0 0.1 0.2 0.3 0.4 0.5 0.6
Q , TOT AL GATE CHARGE (nC)
g
Fig. 11 Gate-Charge Characteristics
DMN2400UFD
Document number: DS35475 Rev. 4 - 2
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© Diodes Incorporated
T
R
T T
H
R
R
TANC
DMN2400UFD
1
E
D = 0.7
D = 0.5
D = 0.3
ESIS
0.1
D = 0.1
MAL
E
0.01
ANSIEN
r(t),
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
R (t) = r(t) *
θ
JA
R = 261°C/W
JA
P(pk)
t
1
t
2
T - T = P * R (t)
JA JA12θ
Duty Cycle, D = t /t
R
θθJA
0.001
0.000001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
t , PULSE DURA TION TIME (s)
1
Fig. 12 Transient Thermal Resp onse
Package Outline Dimensions
A
A3
A1
D
e
X1-DFN1212-3
Dim Min Max Typ
A 0.47 0.53 0.50
A1 0 0.05 0.02
A3 - - 0.13
b 0.27 0.37 0.32
b1 0.17 0.27 0.22
D 1.15 1.25 1.20
E 1.15 1.25 1.20
E
b1
(2x)
e - - 0.80
L 0.25 0.35 0.30
All Dimensions in mm
L
b
Suggested Pad Layout
DMN2400UFD
Document number: DS35475 Rev. 4 - 2
Y2
X
Y1
(2x)
C
Y
X1
(2x)
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Dimensions Value (in mm)
C 0.80
X 0.42
X1 0.32
Y 0.50
Y1 0.50
Y2 1.50
July 2012
© Diodes Incorporated
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
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Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
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Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
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LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
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failure of the life support device or to affect its safety or effectiveness.
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use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2012, Diodes Incorporated
www.diodes.com
DMN2400UFD
DMN2400UFD
Document number: DS35475 Rev. 4 - 2
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