Diodes DMN2400UFD User Manual

Product Summary

I

V

R

(BR)DSS

0.6 @ V

20V

0.8 @ VGS = 2.5V

1.0 @ VGS = 1.8V

1.6 @ VGS = 1.5V

Package

DS(ON)

= 4.5V

GS

X1-DFN1212-3

D

TA = +25°C

0.9A

0.7A

0.5A

0.3A

Description

This new generation MOSFET has been designed to minimize the on­state resistance (R
performance, making it ideal for high efficiency power management
applications.

) and yet maintain superior switching

DS(on)

Applications

• Power management functions

• Battery Operated Systems and Solid-State Relays

• Load switch

ESD PROTECTED

Top View Bottom View Equivalent Circuit Pin-out Top view

DMN2400UFD

N-CHANNEL ENHANCEMENT MODE MOSFET

Features

• Low On-Resistance

• Very low Gate Threshold Voltage, 1.0V max

• Low Input Capacitance

• Fast Switching Speed

• ESD Protected Gate

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 standards for High Reliability

Mechanical Data

• Case: X1-DFN1212-3

• Case Material: Molded Plastic. UL Flammability Classification

Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish – NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

• Terminal Connections: See Diagram

• Weight: 0.005 grams (approximate)

Gate

Gate
Protection
Diode

Drain

Source

Body
Diode

Ordering Information (Note 4)

Part Number Case Packaging

DMN2400UFD-7 X1-DFN1212-3 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017

Code U V W X Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

K24

DMN2400UFD

Document number: DS35475 Rev. 4 - 2

K24 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)

YM

M = Month (ex: 9 = September)

1 of 6

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July 2012

© Diodes Incorporated

θ

θ

θ

)

g

g

g

g

r

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 6) VGS = 4.5V

Continuous Drain Current (Note 6) VGS = 2.5V
Pulsed Drain Current (10s pulse, duty cycle = 1%)

Maximum Body Diode Forward Current (Note 6)

Thermal Characteristics

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range

Steady

State

Steady

State

T

= +25°C

A

= +70°C

T

A

T

= +25°C

A

T

= +70°C

A

Steady state

Steady state

DMN2400UFD

V

DSS

V

GSS

I

D

I

D

I

DM

I

S

P

D

R

JA

P

D

R

JA

R

Jc

T

J, TSTG

20 V

±12 V

0.9

0.7

0.7

0.5

A

A

3.0 A

0.8 A

0.4 W

280 °C/W

0.8 W
140 °C/W
112 °C/W

-55 to +150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C I
Gate-Source Leakage

BV

DSS

I

GSS

DSS

20 — — V
—

—

— — ±1.0

80

100

VGS = 0V, ID = 250A

= 4.5V, VGS = 0V

V

nA
μA

DS

= 20V, VGS = 0V

V

DS

VGS = ±4.5V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y
V

fs

SD

0.45 — 1.0 V
— 0.35 0.6
— 0.45 0.8
— 0.6 1.0
— 0.7 1.6
— 1.4 — S

|

— 0.7 1.2 V

VDS = VGS, ID = 250A
V

= 4.5V, ID = 200mA

GS

= 2.5V, ID = 200mA

V

GS



= 1.8V, ID = 100mA

V

GS

= 1.5V, ID = 50mA

V

GS

VDS = 3V, ID = 200mA

VGS = 0V, IS = 500mA,
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

8. Guaranteed by design. Not subject to production testing.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate.
7 .Short duration pulse test used to minimize self-heating effect.

DMN2400UFD

Document number: DS35475 Rev. 4 - 2

C

iss

C

oss

C

rss

R
Q

Q

s

Q

d

t

D(on)

t

t

D(off)

t

f

www.diodes.com

— 37.0 — pF
— 5.7 — pF
— 4.2 — pF
— 68 — 
— 0.5 — nC
— 0.07 — nC
— 0.1 — nC
— 4.06 — ns
— 7.28 — ns
— 13.74 — ns
— 10.54 — ns

2 of 6

=16V, VGS = 0V,

V

DS

f = 1.0MHz

VDS = 0V, VGS = 0V,

V

= 4.5V, VDS = 10V,

GS

= 250mA

I

D

= 10V, VGS = 4.5V,

V

DD

= 47, RG = 10,

R

L

I

= 200mA

D

© Diodes Incorporated

July 2012