Diodes DMN2400UFB4 User Manual

DMN2400UFB4

20V N-CHANNEL ENHANCEMENT MODE MOSFET

Features

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• UItra-Small Surface Mount Package

• Ultra-Low Package Profile, 0.4mm Maximum Package Height

• Lead Free By Design/RoHS Compliant (Note 1)

• ESD Protected up to 1.5kV

• "Green" Device (Note 2)

• Qualified to AEC-Q101 standards for High Reliability

ESD PROTECTED TO 1.5kV

BOTTOM VIEW

Mechanical Data

• Case: DFN1006H4-3

• Case Material: Molded Plastic, "Green" Molding Compound.

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable

• Weight: 0.001 grams (approximate)

DFN1006H4-3

D

Package Pin Configuration

UL Flammability Classification Rating 94V-0

per MIL-STD-202, Method 208

Drain

S

Gate

G

TOP VIEW

Gate
Protection
Diode

EQUIVALENT CIRCUIT

Source

Ordering Information (Note 3)

Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel

DMN2400UFB4-7 NC 7 8 3000

DMN2400UFB4-7B NC 7 8 10,000

Notes: 1. No purposefully added lead.

2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

DMN2400UFB4

Document number: DS32025 Rev. 5 - 2

DMN2400UFB4-7 DMN2400UFB4-7B

NC NC

Top View

Dot Denotes

Drain Side

Top View

Bar Denotes Gate

and Source Side

1 of 6

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NC = Product Type Marking Code

February 2011

© Diodes Incorporated

θ

)

g

g

g

)

r

)

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 4) VGS = 4.5V
Pulsed Drain Current (Notes 4 & 5)

Thermal Characteristics @T

Characteristic Symbol Value Units

Total Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range

= 25°C

Steady

State

= 25°C unless otherwise specified

A

T

A

= 85°C

T

A

P

R

T

J, TSTG

DMN2400UFB4

V

DSS

V

GSS

I

D

I

DM

D
JA

-55 to +150 °C

20 V

±12 V

0.75

0.55

A

3 A

0.47 mW
258 °C/W

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C I
Gate-Source Leakage
Gate-Source Leakage

BV

DSS

I

GSS

I

GSS

DSS

20 - - V

- - 100 nA

- - ±1.0

- - ±50

VGS = 0V, ID = 250μA
VDS = 20V, VGS = 0V

μA
μA

= ±4.5V, VDS = 0V

V

GS

= ±10V, VDS = 0V

V

GS

ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage (Note 6)

V

GS(th

R

DS (ON)

|Y
V

fs

SD

0.5 - 0.9 V

- - 0.55

- - 0.75

- - 0.9

|

- 1.0 - S

0.7 1.2 V

VDS = VGS, ID = 250μA
V

= 4.5V, ID = 600mA

Ω

GS

V

= 2.5V, ID = 500mA

GS

V

= 1.8V, ID = 350mA

GS

VDS = 10V, ID = 400mA

VGS = 0V, IS = 150mA
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 4. Device mounted on FR-4 PCB, with minimum recommended pad layout, single sided.

5. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%.

6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to product testing.

C
C

t

t

C

oss
rss

Q
Q
Q

D(on

t

D(off

t

iss

s
d

f

- 36.0 - pF

- 5.7 - pF

- 4.2 - pF

- 0.5 - nC

- 0.07 - nC

- 0.1 - nC

- 4.11 - ns

- 3.82 - ns

- 14.8 - ns

- 9.6 - ns

V

=16V, VGS = 0V,

DS

f = 1.0MHz
V

=4.5V, VDS = 10V,

GS

ID =250mA

V

= 10V, VGS = 4.5V,

DD

R

= 47Ω, RG = 10Ω,

L

= 200mA

I

D

DMN2400UFB4

Document number: DS32025 Rev. 5 - 2

2 of 6

www.diodes.com

February 2011

© Diodes Incorporated