Diodes DMN2400UFB User Manual

DMN2400UFB

N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

I

max

V

R

(BR)DSS

0.55 @ V

20V

0.75 @ VGS = 2.5V

DS(ON)

max

= 4.5V

GS

D

TA = 25°C

0.75A

0.63A

Description and Applications

This MOSFET has been designed to minimize the on-state resistance

) and yet maintain superior switching performance, making it

(R

DS(on)

ideal for high efficiency power management applications.

• Battery Charging

• Power Management Functions

• DC-DC Converters

• Portable Power Adaptors

ESD PROTECTED TO 1.5 kV

X1-DFN1006-3

Bottom View

Features and Benefits

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Ultra-Small Surface Mount Package

• ESD Protected up to 1.5kV

• Lead-Free Finish; RoHS compliant (Note 1)

• Halogen and Antimony Free. “Green” Device (Note 2)

• Qualified to AEC-Q101 standards for High Reliability

Mechanical Data

• Case: X1-DFN1006-3

• Case Material: Molded Plastic, "Green" Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections Indicator: Collector Dot

• Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

• Weight: 0.001 grams (approximate)

Drain

Gate

S

D

G

Top View

Package Pin Configuration

Gate
Protection
Diode

Equivalent Circuit

Source

Ordering Information (Note 3)

Part Number Case Packaging

DMN2400UFB-7 X1-DFN1006-3 3,000/Tape & Reel

DMN2400UFB-7B X1-DFN1006-3 10,000/Tape & Reel

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free

2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

DMN2400UFB

Document number: DS31963 Rev. 3 - 2

NB

www.diodes.com

NB = Product Type Marking Code
Dot Denotes Drain Side

1 of 6

April 2012

© Diodes Incorporated

θ

)

g

g

g

)

r

)

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 4) VGS = 4.5V

Continuous Drain Current (Note 4) VGS = 2.5V
Pulsed Drain Current (Note 5)

Thermal Characteristics @T

Characteristic Symbol Value Units

Total Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range

T

Steady

State

Steady

State

= 25°C unless otherwise specified

A

= 25°C

A

T

= 85°C

A

T

= 25°C

A

= 85°C

T

A

P

R

T

J, TSTG

DMN2400UFB

V

DSS

V

GSS

I

D

I

D

I

DM

D
JA

-55 to +150 °C

20 V

±12 V

0.75

0.55

0.63

0.45

A

A

3 A

0.47 mW
258 °C/W

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C I
Gate-Source Leakage
Gate-Source Leakage

BV

I
I

DSS
DSS
GSS
GSS

20 - - V

- - 100 nA

- - ±1.0

- - ±50

VGS = 0V, ID = 250A
VDS = 20V, VGS = 0V

μA
μA

= ±4.5V, VDS = 0V

V

GS

= ±10V, VDS = 0V

V

GS

ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage (Note 6)

V

GS(th

R

DS (ON)

|Y
V

fs

SD

0.5 - 0.9 V

- - 0.55

- - 0.75

- - 0.9

|

- 1.0 - S

0.7 1.2 V

VDS = VGS, ID = 250A
V

= 4.5V, ID = 600mA

Ω

GS

= 2.5V, ID = 500mA

V

GS

= 1.8V, ID = 350mA

V

GS

VDS = 10V, ID = 400mA

VGS = 0V, IS = 150mA
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 4. Device mounted on FR-4 PCB, with minimum recommended pad layout.

5. Device mounted on minimum recommended pad layout test board, 10s pulse duty cycle = 1%.

6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to product testing.

C
C

t

t

C

oss

Q
Q
Q

D(on

t

D(off

t

iss

rss

s
d

f

- 36.0 - pF

- 5.7 - pF

- 4.2 - pF

- 0.5 - nC

- 0.07 - nC

- 0.1 - nC

- 4.11 - ns

- 3.82 - ns

- 14.8 - ns

- 9.6 - ns

V

= 16V, VGS = 0V,

DS

f = 1.0MHz

V

=4.5V, VDS = 10V,

GS

= 250mA

I

D

V

= 10V, VGS = 4.5V,

DD

R

= 47, RG = 10,

L

= 200mA

I

D

DMN2400UFB

Document number: DS31963 Rev. 3 - 2

2 of 6

www.diodes.com

April 2012

© Diodes Incorporated