Diodes DMN2300UFL4 User Manual

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DMN2300UFL4

20V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

max

I

D

= 25°C

T

V

Max R

(BR)DSS

20V

DS(on)

195mΩ @ V
260mΩ @ VGS = 2.5V
380mΩ @ VGS = 1.8V
520mΩ @ VGS = 1.5V

= 4.5V

GS

A

(Notes 6)

2.11A

1.83A

1.51A

1.29A

Description and Applications

This MOSFET has been designed to minimize the on-state resistance

) and yet maintain superior switching performance, making it

(R

DS(on)

ideal for high efficiency power management applications.

• Load switch

ESD PROTECTED TO 2kV

G1

Gate
Protection
Diode

D1

S1

Features and Benefits

• Footprint of just 1.3 mm2

• Ultra Low Profile Package - 0.4mm profile

• On resistance <200mΩ

• Low Gate Threshold Voltage

• Fast Switching Speed

• Ultra-Small Surface Mount Package

• ESD Protected Gate 2KV

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: X2-DFN1310-6

• Case Material: Molded Plastic, “Green” Molding Compound.

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish – NiPdAu annealed over Copper leadframe.

G2

Gate

Protection
Diode

Device Symbol

UL Flammability Classification Rating 94V-0

Solderable per MIL-STD-202, Method 208

D2

S2

Top View

Pin-Out

e4

Ordering Information (Note 4)

Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel

DMN2300UFL4-7 23N 7 8 3000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

23N

DMN2300UFL4

Datasheet Number: DS35946 Rev. 1 - 2

23N = Product Type Marking Code

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T

R

T P

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R

T

R

T

T

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R

R

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DMN2300UFL4

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 6)
Pulsed Drain Current (Note 7)

Steady

State

T

= 25°C

A

= 85°C

T

A

V
V

DSS
GSS

I

I

DM

D

20 V
±8 V

2.11

1.19

A

6.0 A

Thermal Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Power Dissipation

Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout;

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate

7. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%.

(Note 5)
(Note 6) 1.39
(Note 5)
(Note 6) 90

P

D

R

θJA

T

, T

J

STG

0.53

238

W

°C/W

-55 to +150 °C

(W)

IWE

100

90
80
70

Single Pulse
R = 230 C/W

°

θ

JA

R = r * R

θθ

JA(t) (t) JA

T - T = P * R

JA JA(t)

θ

60
50

ANSIEN

40
30

EAK

20

(PK)

10

0

0.0001 0.001 0.01 0.1 1 10 100
t1, PULSE DURATION TIME (sec)

Fig. 1 Single Pulse Maximum Power Dissipation

1

D = 0.7

E

D = 0.5
D = 0.3

ESIS

0.1

D = 0.1

MAL

D = 0.05

E

D = 0.02

0.01

D = 0.01

ANSIEN

D = 0.005

Single Pulse

r(t),

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000

t1, PULSE DURATION TIMES (sec)

Fig. 2 Transient Thermal Resistance

D = 0.9

R (t) = r(t) * R

θθ

JA JA

R = 230°C/W

θ

JA

Duty Cycle, D = t1/ t2

DMN2300UFL4

Datasheet Number: DS35946 Rev. 1 - 2

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f

)

g

g

g

g

)

r

)

R

C

U

R

RENT

R

N CUR

REN

T

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C I
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 8. Short duration pulse test used to minimize self-heating effect.

2.0

1.5

(A)

V = 4.5V

GS

V = 2.5V

GS

V = 2.0V

GS

V = 1.8V

GS

V = 1.5V

GS

BV

I

V

GS(th

R

DS (ON)

|Y
V

C
C
C

Q

Q

t

D(on

t

D(off

DSS
DSS
GSS

SD

iss

oss
rss

R
Q

t

t

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DMN2300UFL4

20 - - V

- - 1

- - 10

0.45 - 0.95 V

- - 195

- - 260

- -

40 - - mS

|

fs

s
d

f

- 0.7 1.2 V

- 64.3 -

- 6.1 -

- 4.5 -

- 70 -

- 1.6 -

- 0.2 -

- 0.2 -

- 3.5 -

- 2.8 -

- 38 -

- 13 -

380
520

2.0

V = 5V

DS

1.5

(A)

VGS = 0V, ID = 10μA

μA

VDS = 20V, VGS = 0V

μA

VGS = ±8V, VDS = 0V

VDS = VGS, ID = 250μA

= 4.5V, ID = 300mA

V

GS

= 2.5V, ID = 250mA

V

mΩ

GS

= 1.8V, ID = 100mA

V

GS

= 1.5V, ID = 50mA

V

GS

VDS = 3V, ID = 30mA
VGS = 0V, IS = 300mA

pF
pF
pF

= 25V, VGS = 0V,

V

DS

f = 1.0MHz

Ω VDS = 0V, VGS = 0V, f = 1MHz

nC

V

= 4.5V, VDS = 15V,

nC
nC

GS

= 1A

I

D

ns
ns
ns

= 10V, I

V

DS

= 10V, RG = 6Ω

V

GS

= 1A

D

ns

1.0

AIN

D

I, D

0.5

V = 1.2V

GS

0

012 345

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 3 Typical Output Ch ar acteristic

1.0

AI

D

I, D

0.5

0

0 0.5 1 1.5 2 2.5 3

T = 150°C

A

T = 125°C

A

V , GATE-SOURCE VOLTAGE (V)

GS

Fig. 4 Typical Transfer Characteristic

T = 25°C

A

T = -55°C

A

T = 85°C

A

DMN2300UFL4

Datasheet Number: DS35946 Rev. 1 - 2

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May 2012

© Diodes Incorporated