Diodes DMN2300UFL4 User Manual

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DMN2300UFL4

20V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

max

I

D

= 25°C

T

V

Max R

(BR)DSS

20V

DS(on)

195mΩ @ V
260mΩ @ VGS = 2.5V
380mΩ @ VGS = 1.8V
520mΩ @ VGS = 1.5V

= 4.5V

GS

A

(Notes 6)

2.11A

1.83A

1.51A

1.29A

Description and Applications

This MOSFET has been designed to minimize the on-state resistance

) and yet maintain superior switching performance, making it

(R

DS(on)

ideal for high efficiency power management applications.

• Load switch

ESD PROTECTED TO 2kV

G1

Gate
Protection
Diode

D1

S1

Features and Benefits

• Footprint of just 1.3 mm2

• Ultra Low Profile Package - 0.4mm profile

• On resistance <200mΩ

• Low Gate Threshold Voltage

• Fast Switching Speed

• Ultra-Small Surface Mount Package

• ESD Protected Gate 2KV

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: X2-DFN1310-6

• Case Material: Molded Plastic, “Green” Molding Compound.

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish – NiPdAu annealed over Copper leadframe.

G2

Gate

Protection
Diode

Device Symbol

UL Flammability Classification Rating 94V-0

Solderable per MIL-STD-202, Method 208

D2

S2

Top View

Pin-Out

e4

Ordering Information (Note 4)

Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel

DMN2300UFL4-7 23N 7 8 3000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

23N

DMN2300UFL4

Datasheet Number: DS35946 Rev. 1 - 2

23N = Product Type Marking Code

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P, P

T

R

T P

O

R

T

R

T

T

H

R

R

TANC

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DMN2300UFL4

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 6)
Pulsed Drain Current (Note 7)

Steady

State

T

= 25°C

A

= 85°C

T

A

V
V

DSS
GSS

I

I

DM

D

20 V
±8 V

2.11

1.19

A

6.0 A

Thermal Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Power Dissipation

Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout;

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate

7. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%.

(Note 5)
(Note 6) 1.39
(Note 5)
(Note 6) 90

P

D

R

θJA

T

, T

J

STG

0.53

238

W

°C/W

-55 to +150 °C

(W)

IWE

100

90
80
70

Single Pulse
R = 230 C/W

°

θ

JA

R = r * R

θθ

JA(t) (t) JA

T - T = P * R

JA JA(t)

θ

60
50

ANSIEN

40
30

EAK

20

(PK)

10

0

0.0001 0.001 0.01 0.1 1 10 100
t1, PULSE DURATION TIME (sec)

Fig. 1 Single Pulse Maximum Power Dissipation

1

D = 0.7

E

D = 0.5
D = 0.3

ESIS

0.1

D = 0.1

MAL

D = 0.05

E

D = 0.02

0.01

D = 0.01

ANSIEN

D = 0.005

Single Pulse

r(t),

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000

t1, PULSE DURATION TIMES (sec)

Fig. 2 Transient Thermal Resistance

D = 0.9

R (t) = r(t) * R

θθ

JA JA

R = 230°C/W

θ

JA

Duty Cycle, D = t1/ t2

DMN2300UFL4

Datasheet Number: DS35946 Rev. 1 - 2

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)

g

g

g

g

)

r

)

R

C

U

R

RENT

R

N CUR

REN

T

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C I
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 8. Short duration pulse test used to minimize self-heating effect.

2.0

1.5

(A)

V = 4.5V

GS

V = 2.5V

GS

V = 2.0V

GS

V = 1.8V

GS

V = 1.5V

GS

BV

I

V

GS(th

R

DS (ON)

|Y
V

C
C
C

Q

Q

t

D(on

t

D(off

DSS
DSS
GSS

SD

iss

oss
rss

R
Q

t

t

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DMN2300UFL4

20 - - V

- - 1

- - 10

0.45 - 0.95 V

- - 195

- - 260

- -

40 - - mS

|

fs

s
d

f

- 0.7 1.2 V

- 64.3 -

- 6.1 -

- 4.5 -

- 70 -

- 1.6 -

- 0.2 -

- 0.2 -

- 3.5 -

- 2.8 -

- 38 -

- 13 -

380
520

2.0

V = 5V

DS

1.5

(A)

VGS = 0V, ID = 10μA

μA

VDS = 20V, VGS = 0V

μA

VGS = ±8V, VDS = 0V

VDS = VGS, ID = 250μA

= 4.5V, ID = 300mA

V

GS

= 2.5V, ID = 250mA

V

mΩ

GS

= 1.8V, ID = 100mA

V

GS

= 1.5V, ID = 50mA

V

GS

VDS = 3V, ID = 30mA
VGS = 0V, IS = 300mA

pF
pF
pF

= 25V, VGS = 0V,

V

DS

f = 1.0MHz

Ω VDS = 0V, VGS = 0V, f = 1MHz

nC

V

= 4.5V, VDS = 15V,

nC
nC

GS

= 1A

I

D

ns
ns
ns

= 10V, I

V

DS

= 10V, RG = 6Ω

V

GS

= 1A

D

ns

1.0

AIN

D

I, D

0.5

V = 1.2V

GS

0

012 345

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 3 Typical Output Ch ar acteristic

1.0

AI

D

I, D

0.5

0

0 0.5 1 1.5 2 2.5 3

T = 150°C

A

T = 125°C

A

V , GATE-SOURCE VOLTAGE (V)

GS

Fig. 4 Typical Transfer Characteristic

T = 25°C

A

T = -55°C

A

T = 85°C

A

DMN2300UFL4

Datasheet Number: DS35946 Rev. 1 - 2

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R

R

OUR

CE ON-R

TANC

R

RAIN-SOUR

C

R

R

OUR

CE ON-R

TANC

GATE THRESH

O

OLT

G

OUR

CE C

URREN

T

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0.4

Ω

0.3

0.2

V = 2.5V

GS

V = 4.5V

GS

0.1

DS(ON)

R , DRAIN-SOURCE ON-RESISTANCE ( )

0

0 0.4 0.8 1.2 1.6 2

I , DRAIN-SOURCE CURRENT (A)

D

Fig. 5 Typical On-Resistance

vs. Drain C urrent an d G at e Vol tage

1.6

V = 4.5V

GS

1.4

I = 1.0A

D

E

1.2

V = 2.5V

GS

I = 500mA

D

0.8

Ω

E ( )

V = 4.5V

GS

0.6

ESIS

0.4

AIN-S

0.2

, D

DS(ON)

0

0 0.25 0.5 0.75 1 1.25 1.5 1.75 2

I , DRAIN CURRENT (A)

D

Fig. 6 Typical On-Resistance

vs. Drain Current and Tem peratur e

0.8

Ω

E ( )

0.6

ESIS

DMN2300UFL4

T = 125°C

A

T = 150°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

0.4

, D

1.0

DSON

0.8

ON-RESISTANCE (NORMALIZED)

0.6

-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)

A

Fig. 7 On-Resistance Variation with Temperature

1.2

1.0

E (V)
A

I = 1mA

0.8

D

LD V

0.6

I = 250µA

D

AIN-S

0.2

, D

DSON

0

-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)

A

Fig. 8 On- R esistanc e Variation with Temperatur e

2.0

1.6

(A)

1.2

V = 2.5V

GS

I = 500mA

D

V = 4.5V

GS

I = 1.0A

D

T = 25°C

A

0.8

0.4

S

I, S

0.2

GS(TH)

V,

0

-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)

A

Fig. 9 Gate Threshold Variation vs. Ambient Temperature

DMN2300UFL4

Datasheet Number: DS35946 Rev. 1 - 2

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0.4

0

0 0.2 0.4 0.6 0.8 1.0 1.2

V , SOURCE-DRAIN VOLTAGE (V)

SD

Fig. 10 Diode Forward Voltage vs. Current

© Diodes Incorporated

May 2012

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CUR

R

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RENT

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DMN2300UFL4

1,000

T = 125°C

A

100,000

10,000

(nA)
EN

100

(nA)

T = 125°C

A

T = 150°C

A

1,000

T = 85°C

T = 85°C

E

10

DSS

I , LEAKA

1

2 4 6 8 10 12 14 16 18 20

V , DRAIN-SOURCE VOLTAGE (V)

DS

A

T = 25°C

A

T = -55°C

A

Fig. 11 Typical Leakage Curren t

vs. Drain-S ource Volta ge

8

100

10

GSS

I , LEAKA

1

2 4 6 8 10 12

V , GATE-SOURCE VOLTAGE (V)

GS

Fig.12 Leakage C ur r ent vs. Gat e- Source Volt age

A

T = 25°C

A

T = -55°C

A

V = 15V

6

DS

I = 1A

D

4

2

GS

V , GATE-SOURCE VOLTAGE (V)

0

0 0.5 1 1.5 2 2.5 3

Q , TOTAL GATE CHARGE (nC)

g

Fig. 13 Gate-Charge Characteristics

DMN2300UFL4

Datasheet Number: DS35946 Rev. 1 - 2

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Package Outline Dimensions

A1

A

A3

Z

B

D2

R

0

.

1

5

0

E

e

f

d

D

E2

d
L

z

X2-DFN1310-6

Dim Min Max Typ

A

A1 0 0.05 0.02
A3

b 0.10 0.20 0.15
D 1.25 1.38 1.30
d

D2 0.30 0.50 0.40

E 0.95 1.075 1.00

e

E2 0.30 0.50 0.40

f

L 0.20 0.30 0.25
Z
All Dimensions in mm

0.40

⎯

⎯ ⎯

⎯ ⎯

⎯ ⎯

⎯ ⎯

⎯ ⎯

⎯

0.13

0.25

0.35

0.10

0.05

Suggested Pad Layout

b

DMN2300UFL4

Datasheet Number: DS35946 Rev. 1 - 2

G3

G2 X2

X1

a

Y2

G1

Y1

www.diodes.com

Dimensions Value (in mm)

G1 0.16
G2 0.17
G3 0.15
X1 0.52
X2 0.20
Y1 0.52
Y2 0.375

a 0.09

b 0.06

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IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
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website, harmless against all damages.

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Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and
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LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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DMN2300UFL4

DMN2300UFL4

Datasheet Number: DS35946 Rev. 1 - 2

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