Diodes DMN2300UFD User Manual

A

f

Product Summary

max

I

V

(BR)DSS

20V

R

200mΩ @ V
260mΩ @ VGS = 2.5V
400mΩ @ VGS = 1.8V
500mΩ @ VGS = 1.5V

DS(on)

Max

= 4.5V

GS

D

= 25°C

T

A

(Notes 4)

1.73A

1.50A

1.27A

1.15A

Description and Applications

This MOSFET has been designed to minimize the on-state resistance
(R

) and yet maintain superior switching performance, making it

DS(on)

ideal for high efficiency power management applications.

• Load switch

X1-DFN1212-3

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Diodes Incorporated

DMN2300UFD

20V N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

• Low Gate Threshold Voltage

• Fast Switching Speed

• “Lead Free”, RoHS Compliant (Note 1)

• Halogen and Antimony Free. "Green" Device (Note 2)

• ESD Protected Gate 2KV

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: X1-DFN1212-3

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish ۛ NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

• Weight: 0.005 grams (approximate)

Drain

Source

Body
Diode

Pin-out Top view

Gate

Gate
Protection
Diode

Equivalent Circuit

Ordering Information (Note 3)

Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel

DMN2300UFD-7 KS2 7 8 3000

Notes: 1. No purposefully added lead

2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2011 2012 2013 2014 2015 2016 2017

Code Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DMN2300UFD

Datasheet Number: DS35443 Rev. 2 - 2

KS2 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)

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θ

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Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current (Note 6)

Steady
State

= 25°C (Note 4)

T

A

T

= 85°C (Note 4)

A

T

= 25°C (Note 5)

A

V
V

DSS
GSS

I

I

DM

D

20 V
±8 V

1.73

1.34

1.21

6.0 A

Thermal Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Power Dissipation

Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range

(Note 4)
(Note 5) 0.47 W
(Note 4)
(Note 5) 265 °C/W

P

D

R

θJA

, T

T

J

STG

Notes: 4. For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of 2oz copper, in still air conditions; the device is measured

when operating in a steady-state condition.

5. Same as note 4, except the device is mounted on minimum recommended pad layout.

6. Device mounted on minimum recommended pad layout test board, 10µs pulse duty cycle = 1%.

0.96 W

130 °C/W

-55 to +150 °C

DMN2300UFD

A

Thermal Characteristics

DMN2300UFD

Datasheet Number: DS35443 Rev. 2 - 2

10

9
8

Single Pulse

°

R = 136 C/W

θ

JA

R (t) = R *r(t)

θθ

JA JA

T - T = P*R

JA JA

7
6
5
4
3
2

P(pk), PEAK TRANSIENT POWER (W)

1
0

0.0001 0.001 0.01 0.1 1 10 100 1000
t1, PULSE DURATION TIME (sec)

Fig. 1 Single Pulse Maximum Power Dissipation

I , DRAIN CURRENT (A)

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10

I(A) @P =1ms

0.1

D

0.01

DW

1

I

D

T = 150 C

J(MAX)

T= 25C

A

Single Pulse

C

D

@

)

A

(

(

I

D

°

s

0

1

=

W

P

@

)

A

@

)

A

(

I

D

A

(

I

D

°

I

D

(

A

)

@

P

W

=

1

0

0

µ

s

s

1

=

W

P

)

s

m

0

0

1

=

W

P

@

A

(

I

D

s

m

0

1

=

W

P

@

)

0.001

0.1 1 10 100
V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 2 SOA, Safe Oper at ion Area

R

DS(ON)

Limited

I(A) @

D

P =10µs

W

September 2011

© Diodes Incorporated

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T

R

T T

HER

R

TANC

)

g

g

g

g

)

r

)

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Diodes Incorporated

DMN2300UFD

1

E

ESIS

0.1

MAL

0.01

ANSIEN

r(t),

0.001

0.000001

D = 0.7
D = 0.5

D = 0.3

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

D = Single Pulse

D = 0.9

R (t) = r(t) * R

θθ

JA JA

R = 136°C/W

θ

JA

Duty Cycle, D =t1/ t2

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
t1, PULSE DURATION TIMES (sec)
Fig. 3 Transient Thermal Resistance

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C I
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (Note 8)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 7. Short duration pulse test used to minimize self-heating effect.

8. Guarantee by design.

BV

DSS

I

GSS

V

GS(th

R

DS (ON)

|Y
V

C
C
C

R

Q
Q
Q

t

D(on

t

D(off

DSS

fs

SD

iss
oss
rss

t

t

f

20 - - V

- - 1

- - ±10

0.45 - 0.95 V
200

- -

260
400
500

40 - - mS

|

- 0.7 1.2 V

s
d

- 67.62 -

- 9.74 -

- 7.58 -

- 68.51 -

- 0.89 2

- 0.14 -

- 0.16 -

- 4.92 -

- 6.93 -

- 21.71 -

- 10.62 -

VGS = 0V, ID = 250μA

μA
μA

= 20V, VGS = 0V

V

DS

= ±8V, VDS = 0V

V

GS

VDS = VGS, ID = 250μA

= 4.5V, ID = 900mA

V

GS

= 2.5V, ID = 800mA

V

mΩ

GS

= 1.8V, ID = 700mA

V

GS

= 1.5V, ID = 200mA

V

GS

VDS = 3V, ID = 300mA
VGS = 0V, IS = 300mA

pF
pF
pF

Ω
nC
nC
nC

= 25V, VGS = 0V,

V

DS

f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz

= 4.5V, VDS = 15V,

V

GS

= 1A

I

D

ns

ns

ns

= 10V, I

V

DS

= 10V, RG = 6Ω

V

GS

ns

= 1A

D

DMN2300UFD

Datasheet Number: DS35443 Rev. 2 - 2

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September 2011

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R

CUR

RENT

RAIN CUR

R

N

T

R

R

A

SOURCE

RESIS

T

A

C

E

R

R

N

SOURC

E O

N-R

E

S

S

TANCE

R

R

A

S

R

C

E

R

E

S

S

T

A

C

E

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Diodes Incorporated

2.0

1.5

(A)

V = 4.5V

GS

V = 2.5V

GS

V = 2.0V

GS

V = 1.8V

GS

V = 1.5V

GS

1.0

2.0

V = 5V

DS

1.5

(A)
E

1.0

DMN2300UFD

AIN

D

I, D

0.5

V = 1.2V

GS

0

012 345

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 4 Typical Output Ch ar acteristic

1

Ω

V = 1.5V

GS

0.8

D

I, D

0.5

0

0 0.5 1 1.5 2 2.5 3

T = 150°C

A

T = 125°C

A

V , GATE-SOURCE VOLTAGE (V)

GS

Fig. 5 Typical Transfer Characteristic

T = 25°C

A

T = -55°C

A

T = 85°C

A

0.6

Ω

()

V = 4.5V

GS

0.5

N

0.6

0.4

0.2

V = 4.5V

GS

DS(ON)

R , DRAIN-SOURCE ON-RESISTANCE ( )

0

0 0.4 0.8 1.2 1.6 2

I , DRAIN-SOURCE CURRENT (A)

D

Fig. 6 Typical On-Resistance

vs. Drain Current and Gate Voltage

0.6

Ω

()

V = 1.8V

GS

0.5

I

T = 125°C

A

0.4

0.3

0.2

­AI

0.1

, D

V = 1.8V

GS

V = 2.5V

GS

T = 150°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

0.4

ON-

0.3

0.2

IN-

0.1

, D

DS(ON)

0

00.20.40.60.81

T = 125°C

A

I , DRAIN CURRENT (A)

D

T = 150°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

Fig. 7 Typical On-Resistance

vs. Drain C urrent an d Temperature

0.6

Ω

()

0.5

N
I

0.4

ON-

0.3

OU

0.2

V = 1.5V

GS

T = 150°C

A

T

A

5

8

=

°

5

2

1

=

T

A

C

°

°

5

2

=

T

A

T = -55°C

A

IN-

0.1

, D

C

C

DS(ON)

0

0 0.2 0.4 0.6 0.8 1

I , DRAIN CURRENT (A)

D

Fig. 8 Typical On-Resistance

vs. Drain C urrent an d Temperature

DMN2300UFD

Datasheet Number: DS35443 Rev. 2 - 2

4 of 7

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DS(ON)

0

00.20.40.60.81
I , DRAIN CURRENT (A)

D

Fig. 9 Typical On-Resistance

vs. Drain C urrent an d Temperature

September 2011

© Diodes Incorporated

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2

GATE THRESH

O

OLTAG

OUR

CE CUR

REN

T

G

CUR

R

T

G

CUR

R

T

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Diodes Incorporated

1.

1.5

V = 4.5V

GS

I = 1.0A

D

1.3

1.1

V = 1.5V

GS

I = 50mA

0.9

DSON

R , DRAIN-SOURCE

ON-RESISTANCE (NORMALIZED)

0.7

0.5

-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)

A

D

Fig. 10 On-Resistance Variation with T emperature

1.

V = 2.5V

GS

I = 500mA

D

V = 1.8V

GS

I = 100mA

D

0.6

Ω

0.5

V = 1.5V

0.4

GS

I = 50mA

D

0.3

0.2

0.1

DSON

R , DRAIN-SOURCE ON-RESISTANCE ( )

0

-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)

A

V = 2.5V

GS

I = 500mA

D

Fig. 11 On-Resistance Variation with Temperature

2.0

DMN2300UFD

V = 1.8V

GS

I = 100mA

D

V = 4.5V

GS

I = 1.0A

D

1.0

E (V)

I = 1mA

0.8

D

LD V

0.6

I = 250µA

D

0.4

0.2

GS(TH)

V,

0

-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)

A

Fig. 12 Gate Threshold Variation vs. Ambient T emperature

1,000

T = 125°C

A

(nA)

100

EN

T = 85°C

E

10

DSS

I , LEAKA

A

T = 25°C

A

T = -55°C

A

1.6

(A)

1.2

T = 25°C

A

0.8

S

I, S

0.4

0

0 0.2 0.4 0.6 0.8 1.0 1.2

V , SOURCE-DRAIN VOLTAGE (V)

SD

Fig. 13 Diode Forward Voltage vs. Current

100,000

10,000

(nA)
EN

T = 125°C

A

T = 150°C

A

1,000

T = 85°C

E

100

10

GSS

I , LEAKA

A

T = 25°C

A

T = -55°C

A

1

2 4 6 8 10 12 14 16 18 20

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 14 Typical Leakage Current

vs. Drain-Source Voltage

DMN2300UFD

Datasheet Number: DS35443 Rev. 2 - 2

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1

2 4 6 8 10 12

V , GATE-SOURCE VOLTAGE (V)

GS

Fig.15 Leakage C ur r ent vs. Gat e- Source Voltage

September 2011

© Diodes Incorporated

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8

V = 15V

6

4

2

GS

V , GATE-SOURCE VOLTAGE (V)

0

0 0.5 1 1.5 2 2.5 3

Q , TOTAL GATE CHARGE (nC)

g

Fig. 16 Gate-Charge Characteristics

DS

I = 1A

D

Package Outline Dimensions

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DMN2300UFD

A

A3

b1

(2x)

A1

D
e

E

L

b

X1-DFN1212-3

Dim Min Max Typ

A 0.47 0.53 0.50
A1 0 0.05 0.02
A3 - - 0.13

b 0.27 0.37 0.32

b1 0.17 0.27 0.22

D 1.15 1.25 1.20

E 1.15 1.25 1.20
e - - 0.80
L 0.25 0.35 0.30

All Dimensions in mm

Suggested Pad Layout

Y2

DMN2300UFD

Datasheet Number: DS35443 Rev. 2 - 2

X

Y1

(2x)

C

Y

X1

(2x)

Dimensions Value (in mm)

C 0.80
X 0.42

X1 0.32

Y 0.50
Y1 0.50
Y2 1.50

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© Diodes Incorporated

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MPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2011, Diodes Incorporated

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DMN2300UFD

DMN2300UFD

Datasheet Number: DS35443 Rev. 2 - 2

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September 2011

© Diodes Incorporated