Diodes DMN2300UFD User Manual

A

f

Product Summary

max

I

V

(BR)DSS

20V

R

200mΩ @ V
260mΩ @ VGS = 2.5V
400mΩ @ VGS = 1.8V
500mΩ @ VGS = 1.5V

DS(on)

Max

= 4.5V

GS

D

= 25°C

T

A

(Notes 4)

1.73A

1.50A

1.27A

1.15A

Description and Applications

This MOSFET has been designed to minimize the on-state resistance
(R

) and yet maintain superior switching performance, making it

DS(on)

ideal for high efficiency power management applications.

• Load switch

X1-DFN1212-3

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DMN2300UFD

20V N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

• Low Gate Threshold Voltage

• Fast Switching Speed

• “Lead Free”, RoHS Compliant (Note 1)

• Halogen and Antimony Free. "Green" Device (Note 2)

• ESD Protected Gate 2KV

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: X1-DFN1212-3

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish ۛ NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

• Weight: 0.005 grams (approximate)

Drain

Source

Body
Diode

Pin-out Top view

Gate

Gate
Protection
Diode

Equivalent Circuit

Ordering Information (Note 3)

Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel

DMN2300UFD-7 KS2 7 8 3000

Notes: 1. No purposefully added lead

2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2011 2012 2013 2014 2015 2016 2017

Code Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DMN2300UFD

Datasheet Number: DS35443 Rev. 2 - 2

KS2 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)

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Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current (Note 6)

Steady
State

= 25°C (Note 4)

T

A

T

= 85°C (Note 4)

A

T

= 25°C (Note 5)

A

V
V

DSS
GSS

I

I

DM

D

20 V
±8 V

1.73

1.34

1.21

6.0 A

Thermal Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Power Dissipation

Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range

(Note 4)
(Note 5) 0.47 W
(Note 4)
(Note 5) 265 °C/W

P

D

R

θJA

, T

T

J

STG

Notes: 4. For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of 2oz copper, in still air conditions; the device is measured

when operating in a steady-state condition.

5. Same as note 4, except the device is mounted on minimum recommended pad layout.

6. Device mounted on minimum recommended pad layout test board, 10µs pulse duty cycle = 1%.

0.96 W

130 °C/W

-55 to +150 °C

DMN2300UFD

A

Thermal Characteristics

DMN2300UFD

Datasheet Number: DS35443 Rev. 2 - 2

10

9
8

Single Pulse

°

R = 136 C/W

θ

JA

R (t) = R *r(t)

θθ

JA JA

T - T = P*R

JA JA

7
6
5
4
3
2

P(pk), PEAK TRANSIENT POWER (W)

1
0

0.0001 0.001 0.01 0.1 1 10 100 1000
t1, PULSE DURATION TIME (sec)

Fig. 1 Single Pulse Maximum Power Dissipation

I , DRAIN CURRENT (A)

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10

I(A) @P =1ms

0.1

D

0.01

DW

1

I

D

T = 150 C

J(MAX)

T= 25C

A

Single Pulse

C

D

@

)

A

(

(

I

D

°

s

0

1

=

W

P

@

)

A

@

)

A

(

I

D

A

(

I

D

°

I

D

(

A

)

@

P

W

=

1

0

0

µ

s

s

1

=

W

P

)

s

m

0

0

1

=

W

P

@

A

(

I

D

s

m

0

1

=

W

P

@

)

0.001

0.1 1 10 100
V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 2 SOA, Safe Oper at ion Area

R

DS(ON)

Limited

I(A) @

D

P =10µs

W

September 2011

© Diodes Incorporated

A

f

T

R

T T

HER

R

TANC

)

g

g

g

g

)

r

)

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Diodes Incorporated

DMN2300UFD

1

E

ESIS

0.1

MAL

0.01

ANSIEN

r(t),

0.001

0.000001

D = 0.7
D = 0.5

D = 0.3

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

D = Single Pulse

D = 0.9

R (t) = r(t) * R

θθ

JA JA

R = 136°C/W

θ

JA

Duty Cycle, D =t1/ t2

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
t1, PULSE DURATION TIMES (sec)
Fig. 3 Transient Thermal Resistance

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C I
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (Note 8)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 7. Short duration pulse test used to minimize self-heating effect.

8. Guarantee by design.

BV

DSS

I

GSS

V

GS(th

R

DS (ON)

|Y
V

C
C
C

R

Q
Q
Q

t

D(on

t

D(off

DSS

fs

SD

iss
oss
rss

t

t

f

20 - - V

- - 1

- - ±10

0.45 - 0.95 V
200

- -

260
400
500

40 - - mS

|

- 0.7 1.2 V

s
d

- 67.62 -

- 9.74 -

- 7.58 -

- 68.51 -

- 0.89 2

- 0.14 -

- 0.16 -

- 4.92 -

- 6.93 -

- 21.71 -

- 10.62 -

VGS = 0V, ID = 250μA

μA
μA

= 20V, VGS = 0V

V

DS

= ±8V, VDS = 0V

V

GS

VDS = VGS, ID = 250μA

= 4.5V, ID = 900mA

V

GS

= 2.5V, ID = 800mA

V

mΩ

GS

= 1.8V, ID = 700mA

V

GS

= 1.5V, ID = 200mA

V

GS

VDS = 3V, ID = 300mA
VGS = 0V, IS = 300mA

pF
pF
pF

Ω
nC
nC
nC

= 25V, VGS = 0V,

V

DS

f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz

= 4.5V, VDS = 15V,

V

GS

= 1A

I

D

ns

ns

ns

= 10V, I

V

DS

= 10V, RG = 6Ω

V

GS

ns

= 1A

D

DMN2300UFD

Datasheet Number: DS35443 Rev. 2 - 2

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September 2011

© Diodes Incorporated