Diodes DMN2300UFD User Manual

A

f

Product Summary

max

I

V

(BR)DSS

20V

R

200mΩ @ V 260mΩ @ VGS = 2.5V 400mΩ @ VGS = 1.8V 500mΩ @ VGS = 1.5V

DS(on)

Max

= 4.5V

GS

D

= 25°C

T

A

(Notes 4)

1.73A

1.50A

1.27A

1.15A

Description and Applications

This MOSFET has been designed to minimize the on-state resistance (R

) and yet maintain superior switching performance, making it

DS(on)

ideal for high efficiency power management applications.

• Load switch

X1-DFN1212-3

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Diodes Incorporated

DMN2300UFD

20V N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

• Low Gate Threshold Voltage

• Fast Switching Speed

• “Lead Free”, RoHS Compliant (Note 1)

• Halogen and Antimony Free. "Green" Device (Note 2)

• ESD Protected Gate 2KV

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: X1-DFN1212-3

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish ۛ NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

• Weight: 0.005 grams (approximate)

Drain

Source

Body Diode

Pin-out Top view

Gate

Gate Protection Diode

Equivalent Circuit

Ordering Information (Note 3)

Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel

DMN2300UFD-7 KS2 7 8 3000

Notes: 1. No purposefully added lead

2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2011 2012 2013 2014 2015 2016 2017

Code Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DMN2300UFD

Datasheet Number: DS35443 Rev. 2 - 2

KS2 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: Y = 2011) M = Month (ex: 9 = September)

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θ

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Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit Drain-Source Voltage Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current (Note 6)

Steady State

= 25°C (Note 4)

T

A

T

= 85°C (Note 4)

A

T

= 25°C (Note 5)

A

V V

DSS GSS

I

DM

D

20 V ±8 V

1.73

1.34

1.21

6.0 A

Thermal Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Power Dissipation

Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range

(Note 4) (Note 5) 0.47 W (Note 4) (Note 5) 265 °C/W

P

D

R

θJA

, T

T

J

STG

Notes: 4. For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of 2oz copper, in still air conditions; the device is measured

when operating in a steady-state condition.

5. Same as note 4, except the device is mounted on minimum recommended pad layout.

6. Device mounted on minimum recommended pad layout test board, 10µs pulse duty cycle = 1%.

0.96 W

130 °C/W

-55 to +150 °C

DMN2300UFD

A

Thermal Characteristics

DMN2300UFD

Datasheet Number: DS35443 Rev. 2 - 2

10

9 8

Single Pulse

°

R = 136 C/W

θ

JA

R (t) = R *r(t)

θθ

JA JA

T - T = P*R

JA JA

7 6 5 4 3 2

P(pk), PEAK TRANSIENT POWER (W)

1 0

0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec)

Fig. 1 Single Pulse Maximum Power Dissipation

I , DRAIN CURRENT (A)

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10

I(A) @P =1ms

0.1

D

0.01

DW

1

I

D

T = 150 C

J(MAX)

T= 25C

A

Single Pulse

C

D

@

)

A

(

I

D

°

s

0

1

=

W

P

@

)

A

@

)

A

(

I

D

A

(

I

D

°

I

D

(

A

)

@

P

W

=

1

0

µ

s

1

=

W

P

)

s

m

0

1

=

W

P

@

A

(

I

D

s

m

0

1

=

W

P

@

)

0.001

0.1 1 10 100 V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 2 SOA, Safe Oper at ion Area

R

DS(ON)

Limited

I(A) @

D

P =10µs

W

September 2011

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T

R

T T

HER

R

TANC

)

g

)

r

)

Product Line o

Diodes Incorporated

DMN2300UFD

1

E

ESIS

0.1

MAL

0.01

ANSIEN

r(t),

0.001

0.000001

D = 0.7 D = 0.5

D = 0.3

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

D = Single Pulse

D = 0.9

R (t) = r(t) * R

θθ

JA JA

R = 136°C/W

θ

JA

Duty Cycle, D =t1/ t2

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, PULSE DURATION TIMES (sec) Fig. 3 Transient Thermal Resistance

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C I Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (Note 8) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time

Notes: 7. Short duration pulse test used to minimize self-heating effect.

8. Guarantee by design.

BV

DSS

I

GSS

V

GS(th

R

DS (ON)

|Y V

C C C

R

Q Q Q

t

D(on

t

D(off

DSS

fs

SD

iss oss rss

t

f

20 - - V

- - 1

- - ±10

0.45 - 0.95 V 200

- -

260 400 500

40 - - mS

|

- 0.7 1.2 V

s d

- 67.62 -

- 9.74 -

- 7.58 -

- 68.51 -

- 0.89 2

- 0.14 -

- 0.16 -

- 4.92 -

- 6.93 -

- 21.71 -

- 10.62 -

VGS = 0V, ID = 250μA

μA μA

= 20V, VGS = 0V

V

DS

= ±8V, VDS = 0V

V

GS

VDS = VGS, ID = 250μA

= 4.5V, ID = 900mA

V

GS

= 2.5V, ID = 800mA

V

mΩ

GS

= 1.8V, ID = 700mA

V

GS

= 1.5V, ID = 200mA

V

GS

VDS = 3V, ID = 300mA VGS = 0V, IS = 300mA

pF pF pF

Ω nC nC nC

= 25V, VGS = 0V,

V

DS

f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz

= 4.5V, VDS = 15V,

V

GS

= 1A

I

D

ns

= 10V, I

V

DS

= 10V, RG = 6Ω

V

GS

ns

= 1A

D

DMN2300UFD

Datasheet Number: DS35443 Rev. 2 - 2

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R

CUR

RENT

RAIN CUR

R

N

T

R

A

SOURCE

RESIS

T

A

C

E

R

N

SOURC

E O

N-R

E

S

TANCE

R

A

S

R

C

E

R

E

S

T

A

C

E

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2.0

1.5

(A)

V = 4.5V

GS

V = 2.5V

GS

V = 2.0V

GS

V = 1.8V

GS

V = 1.5V

GS

1.0

2.0

V = 5V

DS

1.5

(A) E

1.0

DMN2300UFD

AIN

D

I, D

0.5

V = 1.2V

GS

0

012 345

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 4 Typical Output Ch ar acteristic

1

Ω

V = 1.5V

GS

0.8

D

I, D

0.5

0

0 0.5 1 1.5 2 2.5 3

T = 150°C

A

T = 125°C

A

V , GATE-SOURCE VOLTAGE (V)

GS

Fig. 5 Typical Transfer Characteristic

T = 25°C

A

T = -55°C

A

T = 85°C

A

0.6

Ω

()

V = 4.5V

GS

0.5

N

0.6

0.4

0.2

V = 4.5V

GS

DS(ON)

R , DRAIN-SOURCE ON-RESISTANCE ( )

0

0 0.4 0.8 1.2 1.6 2

I , DRAIN-SOURCE CURRENT (A)

D

Fig. 6 Typical On-Resistance

vs. Drain Current and Gate Voltage

0.6

Ω

()

V = 1.8V

GS

0.5

I

T = 125°C

A

0.4

0.3

0.2

AI

0.1

, D

V = 1.8V

GS

V = 2.5V

GS

T = 150°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

0.4

ON-

0.3

0.2

IN-

0.1

, D

DS(ON)

0

00.20.40.60.81

T = 125°C

A

I , DRAIN CURRENT (A)

D

T = 150°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

Fig. 7 Typical On-Resistance

vs. Drain C urrent an d Temperature

0.6

Ω

()

0.5

N I

0.4

ON-

0.3

OU

0.2

V = 1.5V

GS

T = 150°C

A

T

A

5

8

=

°

5

2

1

=

T

A

C

°

5

2

=

T

A

T = -55°C

A

IN-

0.1

, D

C

DS(ON)

0

0 0.2 0.4 0.6 0.8 1

I , DRAIN CURRENT (A)

D

Fig. 8 Typical On-Resistance

vs. Drain C urrent an d Temperature

DMN2300UFD

Datasheet Number: DS35443 Rev. 2 - 2

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DS(ON)

0

00.20.40.60.81 I , DRAIN CURRENT (A)

D

Fig. 9 Typical On-Resistance

vs. Drain C urrent an d Temperature

September 2011

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7

2

GATE THRESH

O

OLTAG

OUR

CE CUR

REN

T

G

CUR

R

T

G

CUR

R

T

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Diodes Incorporated

1.

1.5

V = 4.5V

GS

I = 1.0A

D

1.3

1.1

V = 1.5V

GS

I = 50mA

0.9

DSON

R , DRAIN-SOURCE

ON-RESISTANCE (NORMALIZED)

0.7

0.5

-50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)

A

D

Fig. 10 On-Resistance Variation with T emperature

1.

V = 2.5V

GS

I = 500mA

D

V = 1.8V

GS

I = 100mA

D

0.6

Ω

0.5

V = 1.5V

0.4

GS

I = 50mA

D

0.3

0.2

0.1

DSON

R , DRAIN-SOURCE ON-RESISTANCE ( )

0

-50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)

A

V = 2.5V

GS

I = 500mA

D

Fig. 11 On-Resistance Variation with Temperature

2.0

DMN2300UFD

V = 1.8V

GS

I = 100mA

D

V = 4.5V

GS

I = 1.0A

D

1.0

E (V)

I = 1mA

0.8

D

LD V

0.6

I = 250µA

D

0.4

0.2

GS(TH)

V,

0

-50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)

A

Fig. 12 Gate Threshold Variation vs. Ambient T emperature

1,000

T = 125°C

A

(nA)

100

EN

T = 85°C

E

10

DSS

I , LEAKA

A

T = 25°C

A

T = -55°C

A

1.6

(A)

1.2

T = 25°C

A

0.8

S

I, S

0.4

0

0 0.2 0.4 0.6 0.8 1.0 1.2

V , SOURCE-DRAIN VOLTAGE (V)

SD

Fig. 13 Diode Forward Voltage vs. Current

100,000

10,000

(nA) EN

T = 125°C

A

T = 150°C

A

1,000

T = 85°C

E

100

10

GSS

I , LEAKA

A

T = 25°C

A

T = -55°C

A

1

2 4 6 8 10 12 14 16 18 20

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 14 Typical Leakage Current

vs. Drain-Source Voltage

DMN2300UFD

Datasheet Number: DS35443 Rev. 2 - 2

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1

2 4 6 8 10 12

V , GATE-SOURCE VOLTAGE (V)

GS

Fig.15 Leakage C ur r ent vs. Gat e- Source Voltage

September 2011

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8

V = 15V

6

4

2

GS

V , GATE-SOURCE VOLTAGE (V)

0

0 0.5 1 1.5 2 2.5 3

Q , TOTAL GATE CHARGE (nC)

g

Fig. 16 Gate-Charge Characteristics

DS

I = 1A

D

Package Outline Dimensions

Product Line o

Diodes Incorporated

DMN2300UFD

A

A3

b1

(2x)

A1

D e

E

L

b

X1-DFN1212-3

Dim Min Max Typ

A 0.47 0.53 0.50 A1 0 0.05 0.02 A3 - - 0.13

b 0.27 0.37 0.32

b1 0.17 0.27 0.22

D 1.15 1.25 1.20

E 1.15 1.25 1.20 e - - 0.80 L 0.25 0.35 0.30

All Dimensions in mm

Suggested Pad Layout

Y2

DMN2300UFD

Datasheet Number: DS35443 Rev. 2 - 2

X

Y1

(2x)

C

Y

X1

(2x)

Dimensions Value (in mm)

C 0.80 X 0.42

X1 0.32

Y 0.50 Y1 0.50 Y2 1.50

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MPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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DMN2300UFD

Datasheet Number: DS35443 Rev. 2 - 2

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