Diodes DMN2300UFB4 User Manual

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Diodes Incorporated

Product Summary

(BR)DSS

175mΩ @ V

20V

240mΩ @ VGS = 2.5V 360mΩ @ VGS = 1.8V 500mΩ @ VGS = 1.5V

DS(ON)

= 4.5V

TA = +25°C

(Note 5)

1.30A

1.11A

0.91A

0.82A

Description

This MOSFET has been designed to minimize the on-state resistance (R

) and yet maintain superior switching performance, making it

DS(on)

ideal for high efficiency power management applications.

Applications

• Load switch

ESD PROTECTED TO 2kV

X2-DFN1006-3

Bottom View

DMN2300UFB4

20V N-CHANNEL ENHANCEMENT MODE MOSFET

Features

• Footprint of just 0.6mm2 – thirteen times smaller than SOT23

• 0.4mm profile – ideal for low profile applications

• Low Gate Threshold Voltage

• Fast Switching Speed

• ESD Protected Gate 2KV

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: X2-DFN1006-3

• Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish – NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

• Weight: 0.001 grams (approximate)

Top View

Internal Schematic

Gate

Gate Protection Diode

Equivalent Circuit

Drain

Source

Body Diode

Ordering Information (Note 4)

Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel

DMN2300UFB4-7B NL 7 8 10,000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green " and Lead-free.

4. For packaging details, go to our website at http://www.diodes.com.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

Marking Information

DMN2300UFB4-7B

DMN2300UFB4

Document number: DS35269 Rev. 4 - 2

Top View

Bar Denotes Gate

and Source Side

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NL = Product Type Marking Code

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September 2012

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DMN2300UFB4

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Value Unit Drain-Source Voltage Gate-Source Voltage

Continuous Drain Current (Note 5) Pulsed Drain Current (Note 6)

Steady

State

= +25°C

= +85°C

V V

DSS GSS

20 V ±8 V

1.30

0.96

6 A

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient @TA = +25°C R Operating and Storage Temperature Range

θJA

, T

STG

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C I Gate-Source Leakage

DSS DSS GSS

20 — — V — — 1 µA

— — 10 µA ON CHARACTERISTICS (Note 7) Gate Threshold Voltage

GS(th

0.45 — 0.95 V — — 175

Static Drain-Source On-Resistance

DS (ON)

— — 240 — — 360 — — 500

Forward Transfer Admittance Diode Forward Voltage

40 — — mS — 0.7 1.2 V

DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout.

6. Device mounted on minimum recommended pad layout test board, 10µs pulse duty cycle = 1%.

7. Short duration pulse test used to minimize self-heating effect.

DMN2300UFB4

Document number: DS35269 Rev. 4 - 2

iss

oss

rss

R Q

D(on

D(off

www.diodes.com

— 64.3 — pF — 6.1 — pF — 4.5 — pF — 70 — Ω — 1.6 — nC — 0.2 — nC — 0.2 — nC — 3.5 — ns — 2.8 — ns — 38 — ns — 13 — ns

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500 mW 250 °C/W

-55 to +150 °C

VGS = 0V, ID = 10µA VDS = 20V, VGS = 0V VGS = ±8V, VDS = 0V

VDS = VGS, ID = 250μA V

= 4.5V, ID = 1A

= 2.5V, ID = 750mA

mΩ

= 1.8V, ID = 500mA

= 1.5V, ID = 200mA

VDS = 3V, ID = 30mA VGS = 0V, IS = 300mA

= 25V, VGS = 0V,

f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz V

= 4.5V, VDS = 15V,

= 1A

= 10V, ID = 1A

= 10V, RG = 6Ω

September 2012

CUR

RENT

CUR

RENT

RAIN-SOUR

CE O

N-R

TAN

OUR

CE ON-R

TANC

RAIN

OUR

CE O

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Diodes Incorporated

DMN2300UFB4

2.0

1.5

(A)

V = 4.5V

V = 2.5V

V = 2.0V

V = 1.8V

V = 1.5V

1.0

AIN

I, D

0.5

V = 1.2V

012 345

V , DRAIN-SOURCE VOLTAGE (V)

Figure 1 Typical Output C haracterist ic

1.0

V = 1.5V

0.8

2.0

V = 5V

1.5

(A)

1.0

AIN

I, D

0.5

0 0.5 1.0 1.5 2.0 2.5 3.0

0.6

E ( )

0.5

T = 150°C

T = 125°C

V , GATE-SOURCE VOLTAGE (V)

Figure 2 Typical Transfer Characteristic

V = 4.5V

T = 25°C

T = -55°C

T = 85°C

0.6

0.4

0.2

V = 4.5V

DS(ON)

R , DRAIN-SOURCE ON-RESISTANCE ( )

0 0.4 0.8 1.2 1.6 2.0

I , DRAIN-SOURCE CURRENT (A)

Figure 3 Typical On-Resistance

vs. Drain C urrent an d G at e Vol t age

0.6

V = 1.8V

E ( )

ESIS

0.5

0.4

T = 125°C

T = 150°C

0.3

0.2

AIN-S

0.1

, D

V = 1.8V

V = 2.5V

T = 85°C

T = 25°C

T = -55°C

0.4

ESIS

0.3

T = 125°C

0.2

T = 25°C

0.1

, D

DS(ON)

0 0.2 0.4 0.6 0.8 1.0

I , DRAIN CURRENT (A)

Figure 4 Typical On-Resistance

vs. Drain C urrent an d Temperature

0.6

V = 1.5V

E ( )

0.5

T = 150°C

0.4

ESIS

0.3

0.2

-S

0.1

, D

T = 150°C

T = 85°C

T = -55°C

DS(ON)

0 0.2 0.4 0.6 0.8 1.0

I , DRAIN CURRENT (A)

Figure 5 Typical On-Resistance

vs. Drain C urrent an d Temperature

DMN2300UFB4

Document number: DS35269 Rev. 4 - 2

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DS(ON)

0 0.2 0.4 0.6 0.8 1.0

I , DRAIN CURRENT (A)

Figure 6 Typical On-Resistance

vs. Drain C urrent an d Temperature

September 2012

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