Diodes DMN2300UFB User Manual

A

f

Product Summary

max

I

V

R

(BR)DSS

20V

DS(on)

175mΩ @ V
240mΩ @ VGS= 2.5V
360mΩ @ VGS= 1.8V

= 4.5V

GS

D

= 25°C

T

A

(Note 4)

1.30A

1.11A

0.91A

Description and Applications

This MOSFET has been designed to minimize the on-state resistance
(R

) and yet maintain superior switching performance, making it

DS(on)

ideal for high efficiency power management applications.

• Load switch

ESD PROTECTED TO 2kV

DFN1006-3

Bottom View

Product Line o

Diodes Incorporated

DMN2300UFB

20V N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

• Footprint of just 0.6mm2 – thirteen times smaller than SOT23

• 0.5mm profile – ideal for low profile applications

• On resistance <200mΩ @ V

• Low Gate Threshold Voltage

• Fast Switching Speed

• “Lead Free”, RoHS Compliant (Note 1)

• Halogen and Antimony Free. "Green" Device (Note 2)

• ESD Protected Gate 2KV

• Qualified to AEC-Q101 Standards for High Reliability

= 4.5V

GS

Mechanical Data

• Case: DFN1006-3

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish – NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

• Weight: 0.001 grams (approximate)

Drain

Body

S

D

G

Top View

Internal Schematic

Gate

Gate
Protection
Diode

Equivalent Circuit

Diode

Source

Ordering Information (Note 3)

Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel

DMN2300UFB-7 NI 7 8 3,000

DMN2300UFB-7B NI 7 8 10,000

Notes: 1. No purposefully added lead

2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

DMN2300UFB-7 DMN2300UFB-7B

DMN2300UFB

Document number: DS35235 Rev. 1 - 2

NI NI

Top View

Dot Denotes

Drain Side

Top View

Bar Denotes Gate

and Source Side

1 of 6

www.diodes.com

NI = Product Type Marking Code

May 2011

© Diodes Incorporated

A

f

)

g

g

g

g

)

r

)

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage

T

Continuous Drain Current

Steady

State

A

T

A

T

A

Pulsed Drain Current (Note 6)

Thermal Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Power Dissipation (Note 4)
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 4)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range

= 25°C (Note 4)
= 85°C (Note 4)
= 25°C (Note 5)

Product Line o

Diodes Incorporated

DMN2300UFB

V

DSS

V

GSS

I

D

I

DM

P

D

P

D

R

θJA

R

θJA

T

, T

J

STG

20 V
±8 V

1.32

0.94

A

1.78
8 A

0.468 W

1.2 W
267 °C/W
104 °C/W

-55 to +150 °C

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C I
Gate-Source Leakage

BV

DSS

I

GSS

DSS

20 - - V

- - 1

- - 10

VGS = 0V, ID = 10μA

μA

VDS = 20V, VGS = 0V

μA

= ±8V, VDS = 0V

V

GS

ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y
V

SD

0.45 - 0.95 V

- - 175

- - 240

- - 360

40 - - mS

|

fs

- 0.7 1.2 V

VDS = VGS, ID = 250μA

= 4.5V, ID = 300mA

V

GS

mΩ

V

= 2.5V, ID = 250mA

GS

V

= 1.8V, ID = 100mA

GS

VDS = 3V, ID = 30mA

VGS = 0V, IS = 300mA
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance

Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout

5. Device mounted on FR-4 substrate PC board, 2oz copper, with 25mm X 25mm square copper plate

6. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%.

7. Short duration pulse test used to minimize self-heating effect.

C
C
C

Q

Q

t

D(on

t

D(off

iss
oss
rss

R
Q

s
d

t

t

f

- 67.62 -

- 9.74 -

- 7.58 -

- 68.51 -

- 0.89 -

- 0.14 -

- 0.16 -

- 4.92 -

- 6.93 -

- 21.71 -

- 10.62 -

pF

V

= 20V, VGS = 0V,

pF
pF

Ω
nC
nC
nC

DS

f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
V

= 4.5V, VDS = 10V,

GS

I

= 1A

D

ns

ns

ns

= 10V, I

V

DS

V

= 4.5V, RG = 6Ω

GS

D

ns

= 1A

DMN2300UFB

Document number: DS35235 Rev. 1 - 2

2 of 6

www.diodes.com

May 2011

© Diodes Incorporated