Diodes DMN2300U User Manual

A

f

20V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23

Product Summary

V

R

(BR)DSS

20V

ID Max (Note 5)

DS(on)

175mΩ @ V
240mΩ @ VGS = 2.5V 1.20A @ TA = 25°C
360mΩ @ VGS = 1.8V 1.0A @ TA = 25°C

= 4.5V 1.40A @ TA = 25°C

GS

Description and Applications

This MOSFET has been designed to minimize the on-state resistance

) and yet maintain superior switching performance, making it

(R

DS(on)

ideal for high efficiency power management applications.

• Load switch

ESD PROTECTED TO 2kV

SOT23

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DMN2300U

Features and Benefits

• On resistance <200mΩ

• Low Gate Threshold Voltage

• Fast Switching Speed

• “Lead Free”, RoHS Compliant (Note 1)

• Halogen and Antimony Free. "Green" Device (Note 2)

• ESD Protected Gate 2kV

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT23

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish – Matte Tin

• Weight: 0.08 grams (approximate)

Drain

D

G

S

Gate

Gate
Protection
Diode

Equivalent Circuit

Body
Diode

Source

Ordering Information (Note 3)

Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel

DMN2300U-7 N2U 7 8 3000

Notes: 1. No purposefully added lead

2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2011 2012 2013 2014 2015 2016 2017

Code Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DMN2300U

Datasheet number: DS35309 Rev. 2 - 2

N2U

YM

www.diodes.com

N2U = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)

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DMN2300U

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current (Note 6)

Steady

State

= 25°C (Note 5)

T

A

= 85°C (Note 5)

T

A

T

= 25°C (Note 4)

A

V
V

DSS
GSS

I

I

DM

D

Thermal Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Power Dissipation

Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range

Notes: 4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout

5. Device mounted on 25mm X 25mm square copper plate with FR-4 substrate PC board, 2oz copper

6. Device mounted on minimum recommended pad layout test board, 10

(Note 4)
(Note 5) 0.55 W
(Note 4)
(Note 5) 228 °C/W

P

D

R

θJA

, T

T

J

STG

μs pulse duty cycle = 1%.

Thermal Characteristics

100

90
80

Single Pulse
Rthja = 220C/W
Rthja(t) = Rthja*r(t)
T - T = P*Rthja (t)

JA

100

10

20 V
±8 V

1.40

1.01

A

1.24
11 A

0.43 W

288 °C/W

-55 to +150 °C

I (A) @

I (A) @

D

P = 1ms

W

D

P = 100µs

W

70
60
50
40
30
20

P(pk), PEAK TRANSIENT POWER (W)

10

0

0.00001 0.001 0.1 10 1000
T1, PULSE DURATION SECTION (sec)

Fig. 1 Single Maximum Power Dissipation

(A)

1

0.1

AIN

D

I, D

0.01

0.001

0.01 0.1 1 10 100

I (A) @

D

P = 10ms

W

I (A) @ DC

D

I (A) @

D

P = 10s

W

T = 150°C

J(MAX)

T = 25°C

A

Single Pulse

V , DRAIN-SOURCE VOLTAGE

DS

Fig. 2 SOA, Safe Opera t ion Area

I (A) @

D

P = 1s

W

I (A) @

D

P = 100ms

W

I (A) @

D

P = 10µs

W

DMN2300U

Datasheet number: DS35309 Rev. 2 - 2

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)

g

g

g

g

)

r

)

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1

r(t) @ D=0.5

Diodes Incorporated

DMN2300U

r(t) @ D=0.3

0.1

r(t) @ D=0.1

r(t) @ D=0.05

r(t) @ D=0.7

r(t) @ D=0.9

r(t) @ D=0.01

0.01

r(t) @ D=0.01

R(t), TRANSIENT THERMAL RESISITANCE

r(t) @ D=0.005

r(t) @ D=Single Pulse

R (t) = r(t)*R

θθ

JA JA

R = 220C/W

θ

JA

Duty Cycle, D = t1/t2

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t1, PULSE DURATION TIME (sec)

Fig. 3 Transient Therma l R esistance

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C I
Gate-Source Leakage

BV

DSS

I

GSS

DSS

20 - - V

- - 1

- - 10

VGS = 0V, ID = 10μA

μA
μA

= 20V, VGS = 0V

V

DS

= ±8V, VDS = 0V

V

GS

ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y
V

SD

0.45 - 0.95 V
175

-

240
360

40 - - mS

|

fs

- 0.7 1.2 V

VDS = VGS, ID = 250μA
V

= 4.5V, ID = 300mA

mΩ

GS

= 2.5V, ID = 250mA

V

GS

= 1.8V, ID = 100mA

V

GS

VDS = 3V, ID = 30mA

VGS = 0V, IS = 300mA
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 7. Short duration pulse test used to minimize self-heating effect.

t

t

C
C
C

R

Q
Q
Q

D(on

D(off

oss

rss

t

t

iss

s
d

f

- 64.3 -

- 6.1 -

- 4.5 -

- 70 -

- 1.6 -

- 0.2 -

- 0.2 -

- 3.5 -

- 2.8 -

- 38 -

- 13 -

pF
pF
pF
Ω
nC
nC
nC

= 25V, VGS = 0V,

V

DS

f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
V

= 4.5V, VDS = 15V,

GS

= 1A

I

D

ns
ns
ns

= 10V, I

V

DS

= 10V, RG = 6Ω

V

GS

D

ns

= 1A

DMN2300U

Datasheet number: DS35309 Rev. 2 - 2

3 of 7

www.diodes.com

July 2011

© Diodes Incorporated