Diodes DMN2250UFB User Manual

DMN2250UFB

N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

I

V

(BR)DSS

20V

R

0.17Ω @ V

0.23Ω @ VGS = 2.5V

0.25Ω @ VGS = 1.8V

DS(on) max

= 4.5V

GS

D

TA = +25°C

1.35A

1.15A

1.10A

Description

This new generation MOSFET has been designed to minimize the on­state resistance (R
performance, making it ideal for high efficiency power management
applications.

) and yet maintain superior switching

DS(on)

Applications

• DC-DC Converters

• Power Management Functions

NEW PRODUCT

ADVANCE INFORMATION

ESD PROTECTED

X1-DFN1006-3

Bottom View

Features

• Low On-Resistance

• Very Low Gate Threshold Voltage V

• Low Input Capacitance

• Fast Switching Speed

• ESD Protected Gate

• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

GS(TH)

, 1.0V max

Mechanical Data

• Case: X1-DFN1006-3

• Case Material: Molded Plastic, “Green” Molding

Compound. UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish – NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

• Weight: 0.001 grams (approximate)

S

D

G

Top View

Internal Schematic

e4

Gate

Gate
Protection
Diode

Equivalent Circuit

Drain

Source

Body
Diode

Ordering Information (Note 4)

Part Number Case Packaging

DMN2250UFB-7B X1-DFN1006-3 10,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

DMN2250UFB

Document number: DS36035 Rev. 3 - 2

Z5

Top View

Z5 = Product Type Marking Code
Bar Denotes Gate and Source Side

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February 2013

© Diodes Incorporated

θ

)

g

g

g

r

DMN2250UFB

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = 4.5V

Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Maximum Body Diode continuous Current

Steady

State

= +25°C

T

A

T

= +70°C

A

V

DSS

V

GSS

I

D

I

DM

I

S

20 V
±8 V

1.35

1.03

A

6 A
1 A

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

NEW PRODUCT

Operating and Storage Temperature Range

= +25°C

T

A

TA = +70°C

Steady state

P

R

T

J, TSTG

D

JA

0.5

0.3

W

278 °C/W

-55 to +150 °C

ADVANCE INFORMATION

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C I
Gate-Source Leakage

BV

DSS

I

GSS

DSS

20 — — V
— —
— —

100 nA

±1 µA

VGS = 0V, ID = 250μA
VDS = 20V, VGS = 0V

VGS = ±6V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y
V

SD

0.35

—

—

|

fs

—

—
—
—
—

1.0 V
170
230

mΩ

250

1.4 — S

0.7 1.2 V

VDS = VGS, ID = 250μA

= 4.5V, ID = 1A

V

GS

V

= 2.5V, ID = 1A

GS

V

= 1.8V, ID = 1A

GS

VDS = 10V, ID = 1A

VGS = 0V, IS = 150mA
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance

C

iss

C

oss

C

rss

R
Total Gate Charge (VGS = 4.5V) Qg
Total Gate Charge (VGS = 10V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to product testing.

Q
Q

t

D(on)

t

D(off)

s

d

t

t

f

— 94 —
— 12 —
— 10 —
—

87.1
— 1.4 —
— 3.1 —
— 0.13 —
— 0.14 —
— 4.3 —
— 6.1 —
— 59.4 —
— 25.4 —

—

pF
pF
pF

Ω

=16V, VGS = 0V,

V

DS

f = 1.0MHz

VDS = 0V, VGS = 0V, f = 1.0MHz
nC
nC

V

= 10V, ID = 250mA

nC

DS

nC
ns
ns
ns
ns

= 10V, VGS = 4.5V,

V

DD

= 47Ω, RG = 10Ω,

R

L

I

= 200mA

D

DMN2250UFB

Document number: DS36035 Rev. 3 - 2

2 of 6

www.diodes.com

February 2013

© Diodes Incorporated