NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSI S TOR
Features
• Epitaxial Planar Die Construction
• Complementary PNP Types Available (DDTA)
• Built-In Biasing Resistor, R1 only
• Lead Free/RoHS Compliant (Note 2)
• "Green" Device (Note 3 and 4)
Mechanical Data
• Case: SOT-323
• Case Material: Molded Plastic, "Green" Molding
Compound, Note 4. UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminal Connections: See Diagram
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over Alloy
42 leadframe).
• Marking Information: See Diagrams & Page 3
• Type Code: See Table Below
• Ordering Information: See Page 3
• Weight: 0.006 grams (approximate)
P/N R1 (NOM) Type Code
DDTC113TUA
DDTC123TUA
DDTC143TUA
DDTC114TUA
DDTC124TUA
DDTC144TUA
DDTC115TUA
DDTC125TUA
1KΩ
2.2KΩ
4.7KΩ
10KΩ
22KΩ
47KΩ
100KΩ
200KΩ
N01
N03
N07
N12
N16
N19
N23
N25
DDTC (R1-ONLY SERIES) UA
A
C
B
G
H
K
J
R
1
B
SCHEMATIC DIAGRAM
C
B
E
M
D
L
E
C
E
SOT-323
Dim Min Max
A 0.25 0.40
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
E 0.30 0.40
G 1.20 1.40
H 1.80 2.20
J 0.0 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.18
α
All Dimensi mm ons in
0° 8°
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Notes: 1. Mounted on FR4 PC Board with recommended pad layout as shown on Diodes Inc., suggested pad layout document AP02001, which can be found on
our website at http://www.diodes.com/datasheets/ap02001.pdf
code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants
2. No purposefully added lead.
3. Diodes Inc.'s "Green" Policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product manufactured with date code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to date
DS30323 Rev. 7 – 2
www.diodes.com
1 of 3
V
CBO
V
CEO
V
EBO
IC (Max)
P
d
R
JA
θ
Tj, T
STG
50 V
50 V
5 V
100 mA
200 mW
833
-55 to +150
DDTC (R1-ONLY SERIES) UA
°C/W
°C
© Diodes Incorporated
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
BV
BV
BV
I
CBO
I
EBO
CBO
CEO
EBO
50
50
5
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
0.5
0.5
V
V
V
μA
μA
IC = 50μA
IC = 1mA
IE = 50μA
VCB = 50V
VEB = 4V
IC/IB = 10mA/1mA DDTC113TUA
IC/IB = 5mA/0.5mA DDTC123TUA
IC/IB = 2.5mA/.25mA DDTC143TUA
Collector-Emitter Saturation Voltage
V
CE(sat)
⎯ ⎯
0.3 V
IC/IB = 1mA/.1mA DDTC114TUA
IC/IB = 5mA/0.5mA DDTC124TUA
IC/IB = 2.5mA/.25mA DDTC144TUA
IC/IB = 1mA/0.1mA DDTC115TUA
IC/IB = .5mA/.05mA DDTC125TUA
DC Current Transfer Ratio
h
Input Resistor (R1) Tolerance ΔR
Gain-Bandwidth Product*
*Transistor - For Reference Only
FE
1
f
T
100 250 600
-30
⎯
⎯
250
+30 %
⎯
⎯ IC = 1mA, VCE = 5V
VCE = 10V, IE = -5mA,
MHz
f = 100MHz
Typical Curves – DDTC114TUA
250
S)
200
1
I/I = 10
E (V)
CB
⎯
N (MILLIWA
DISSI
D
1,000
MALIZED)
(
AI
150
100
100
10
50
0.1
LLE
25 C
75 C
°
-25 C
°
°
0.01
CE(SAT)
V , MAXIM
0
-50
050100
T , AMBIENT TEMPERATURE ( C)
A
Fig. 1 Derating Curve
°
150
0.001
0
10
I , COLLECTOR CURRENT (mA)
C
20
Fig. 2 V vs. I
30
CE(SAT) C
40
50
4
I = 0mA
E
)
3
E (p
I
2
A
A
,
OB
1
FE
h, D
1
110
I , COLLECTOR CURRENT (mA)
C
Fig. 3 DC Current Gain
DS30323 Rev. 7 – 2
100
2 of 3
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0
0
10
5
V , REVERSE BIAS VOLTAGE (V)
R
15
20
Fig. 4 Output Capacitance
DDTC (R1-ONLY SERIES) UA
© Diodes Incorporated
25
30