Diodes DDA-LO-R1-U User Manual
PNP PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Complementary NPN Types Available (DDC)
• Built-In Biasing Resistors
• Lead-Free/RoHS Compliant (Note 3)
• "Green" Device (Note 4 and 5)
Mechanical Data
• Case: SOT-363
• Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Finish - Matte Tin Solderable per
MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
• Terminal Connections: See Diagram
• Marking Information: See Page 3
• Type Code: See Table Below
• Ordering Information: See Page 3
• Weight: 0.0058 grams (approximate)
P/N R1 (NOM) R2 (NOM) Type Code
DDA122LU
DDA142JU
DDA122TU
DDA142TU
0.22K
0.47K
0.22K
0.47K
10K
10K
OPEN
OPEN
P81
P82
P83
P84
DDA (LO-R1) U
K
J
A
C
B
H
D
L
F
654
R
1
R
2
R
R
2
1
1
2
3
R1, R
2
SCHEMATIC DIAGRAM
SOT-363
Dim Min Max
A 0.10 0.30
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
F 0.30 0.40
H 1.80 2.20
M
J
⎯
0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.25
8°
0°
α
All Dimensions in mm
54
6
R
1
R
1
1
32
R1 Only
Maximum Ratings NPN Section @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Supply Voltage (1) to (6) and (4) to (3)
Input Voltage (1) to (2) and (4) to (5) DDA122LU
DDA142JU
Input Voltage (1) to (2) and (4) to (5) DDA122TU
DDA142TU
Output Current All
Power Dissipation (Note 2)
Thermal Resistance, Junction to Ambient Air (Note 2)
Operating and Storage Temperature Range
Notes: 1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30423 Rev. 7 - 2
2. 150mW per element must not be exceeded.
3. No purposefully added lead.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
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V
CC
V
IN
V
EBO (MAX)
I
C
P
R
θ
Tj, T
d
JA
STG
+5 to -6
+5 to -6
-100 mA
-55 to +150
-50 V
V
-5 V
200 mW
625
°C/W
°C
DDA (LO-R1) U
© Diodes Incorporated
P
P
O
R
P
T
O
N
Electrical Characteristics @T
Characteristic Symbol Min Typ Max Unit Test Condition
DDA122LU
Input Voltage
DDA142JU
DDA122LU
DDA142JU
Output Voltage
Input Current
DDA122LU
DDA142JU
Output Current
DC Current Gain
DDA122LU
DDA142JU
Gain-Bandwidth Product*
* Transistor - For Reference Only
Electrical Characteristics @T
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
DDA122TU
DDA142TU
DDA122TU
DDA142TU
DDA122TU
DDA142TU
= 25°C unless otherwise specified R1, R2 Types
A
V
l(off)
V
l(on)
V
O(on)
I
l
I
O(off)
G
l
f
T
= 25°C unless otherwise specified R1 Only Types
A
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
-0.3
-0.3
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
56
56
⎯
-50
-40
-5
⎯ ⎯
⎯
⎯
⎯ ⎯
100
100
⎯ ⎯
-2.0
-2.0
-0.3V V
-0.5
⎯ ⎯ ⎯
200
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯
250
250
-28
-13
MHz
⎯
-0.5
-0.5
-0.5
-0.3 V
600
600
V
VCC = -5V, IO = -100μA
VO = -0.3V, IO = -20mA
V
VO = -0.3V, IO = -20mA
IO/Il = -5mA/-0.25mA
mA
VI = -5V
μA
VCC = -50V, VI = 0V
VO = -5V, IO = -10mA
VCE = -10V, IE = -5mA, f = 100MHz
V
IC = -50μA
V
IC = -1mA
IE = -50μA
V
IE = -50μA
μA
VCB = -50V
μA
VEB = -4V
IC = -5mA, IB = -0.25mA
⎯
IC = -1mA, VCE = -5V
Gain-Bandwidth Product*
* Transistor - For Reference Only
f
T
⎯
200
⎯
MHz
VCE = -10V, IE = 5mA, f = 100MHz
(mW)
I
A
DISSI
WE
,
d
250
200
150
100
50
R = 625
°
C/W
θ
JA
0
-50
(150mW per element must not be exceeded)
050100
T , AMBIENT TEMPERATURE ( C)
A
Fig. 1 Power Derating Curve
150
°
DS30423 Rev. 7 - 2
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DDA (LO-R1) U
© Diodes Incorporated
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