Diodes DCX-xxxx-H User Manual
COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Built-In Biasing Resistors
• Lead Free By Design/RoHS Compliant (Note 2)
• "Green" Device (Note 3 and 4)
Mechanical Data
• Case: SOT-563
• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Weight: 0.005 grams (approximate)
NEW PPR UCR UCOD T T OD
P/N R1 R2 MARKING
DCX124EH
DCX144EH
DCX143EH
DCX114YH
DCX123JH
DCX114EH
DCX143TH
DCX114TH
22KΩ
47KΩ
4.7KΩ
10KΩ
2.2KΩ
10KΩ
4.7KΩ
10KΩ
22KΩ
47KΩ
4.7KΩ
47KΩ
47KΩ
10KΩ
⎯
⎯
Maximum Ratings NPN Section @T
C17
C20
C08
C14
C06
C13
C07
C12
A
CXX YM
B
D
G
K
H
R
R
1
2
R
R
2
1
R1, R2
SCHEMATIC DIAGRAM, TOP VIEW
= 25°C unless otherwise specified
A
DCX (xxxx) HDCX (xxxx) H
SOT-563
Dim Min Max Typ
A 0.15 0.30 0.25
C
M
L
B 1.10 1.25 1.20
C 1.55 1.70 1.60
D 0.50
G 0.90 1.10 1.00
H 1.50 1.70 1.60
K 0.56 0.60 0.60
L 0.15 0.25 0.20
M 0.10 0.18 0.11
All Dimensions in mm
R
1
R
1
R
Only
1
Characteristic
Supply Voltage
Input Voltage DCX124EH
DCX144EH
DCX143EH
DCX114YH
DCX123JH
DCX114EH
DCX143TH
DCX114TH
Output Current DCX124EH
DCX144EH
DCX143EH
DCX114YH
DCX123JH
DCX114EH
DCX143TH
DCX114TH
Output Current All
Power Dissipation (Total)
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Notes: 1. Mounted on FR4 Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30422 Rev. 3 - 2
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
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Symbol Value Unit
VCC
-10 to +40
-10 to +40
-10 to +30
-6 to +40
-5 to +12
-10 to +40
-5V max
-5V max
100
100
100
100
100 mA
150 mW
833
-55 to +150
1 of 6
VIN
IO
IC (Max)
Pd
R
JA
θ
Tj, T
STG
50 V
30
30
70
50
mA
°C/W
°C
© Diodes Incorporated
V
DCX (xxxx) H
Maximum Ratings PNP Section @T
Characteristic Symbol Value Unit
Supply Voltage
Input Voltage DCX124EH
DCX144EH
DCX143EH
DCX114YH
DCX123JH
DCX114EH
DCX143TH
DCX114TH
Output Current DCX124EH
DCX144EH
DCX143EH
DCX114YH
DCX123JH
DCX114EH
DCX143TH
DCX114TH
Output Current All
NEW PRODUCT
Power Dissipation (Total)
Operating and Storage Temperature Range
Electrical Characteristics NPN Section @T
Characteristic (DDC143TH & DDC114TH only) Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Gain-Bandwidth Product*
Characteristic Symbol Min Typ Max Unit Test Condition
DCX124EH
DCX144EH
DCX143EH
DCX114YH
DCX123JH
DCX114EH
Input Voltage
DCX124EH
DCX144EH
DCX143EH
DCX114YH
DCX123JH
DCX114EH
DCX124EH
DCX144EH
Output Voltage
DCX143EH
DCX114YH
DCX123JH
DCX114EH
DCX124EH
DCX144EH
Input Current
DCX143EH
DCX114YH
DCX123JH
DCX114EH
Output Current
DCX124EH
DCX144EH
DC Current Gain
DCX143EH
DCX114YH
DCX123JH
DCX114EH
* Transistor - For Reference Only
DS30422 Rev. 3 - 2
= 25°C unless otherwise specified
A
VCC
VIN
IO
IC (Max)
Pd
Tj, T
STG
= 25°C unless otherwise specified
A
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
hFE
fT ⎯
V
l(off)
V
l(on)
V
O(on)
50
50
5
⎯ ⎯
⎯ ⎯
⎯ −−
⎯ ⎯
⎯ ⎯
⎯ ⎯
100 250 600
250
0.5
0.5
0.5
0.3
0.5
0.5
⎯
⎯
0.5
0.5
0.3 V
⎯
1.1
1.1
1.1
⎯
⎯
⎯
1.1
1.9
1.9
1.9
1.9
⎯
⎯
3.0
3.0
3.0
1.4
1.1
3.0
0.1 0.3 V
0.36
0.18
Il
⎯ ⎯
1.8
0.88
3.6
0.88
I
⎯ ⎯
O(off)
0.5
56
68
Gl
20
68
⎯ ⎯ ⎯
80
30
2 of 6
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50 V
+10 to -40
+10 to -40
+10 to -30
+6 to -40
+5 to -12
+10 to -40
+5V max
+5V max
-30
-30
-100
-70
-100
-50
-100
-100
-100 mA
150 mW
-55 to +150
V
IC = 50μA
V
IC = 1mA
V
IE = 50μA
μA
VCB = 50V
μA
VEB = 4V
IC/IB = 2.5mA / 0.25mA DCX143TH
IC/IB = 1mA / 0.1mA DCX114TH
⎯ IC = 1mA, VCE = 5V
MHz
VCE = 10V, IE = -5mA, f = 100MHz
V
VCC = 5V, IO = 100μA
VO = 0.3V, IO = 5mA
VO = 0.3V, IO = 2mA
VO = 0.3V, IO = 20mA
VO = 0.3V, IO = 1mA
VO = 0.3V, IO = 5mA
VO = 0.3V, IO = 10mA
IO/Il = 10mA / 0.5mA
IO/Il = 10mA / 0.5mA
IO/Il = 10mA / 0.5mA
IO/Il = 5mA / 0.25mA
IO/Il = 5mA / 0.25mA
IO/Il = 10mA / 0.5mA
mA
VI = 5V
μA
VCC = 50V, VI = 0V
VO = 5V, IO = 5mA
VO = 5V, IO = 5mA
VO = 5V, IO = 10mA
VO = 5V, IO = 10mA
VO = 5V, IO = 10mA
VO = 5V, IO = 5mA
V
mA
°C
DCX (xxxx) H
© Diodes Incorporated
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