Diodes DCX4710H User Manual
General Description
• DCX4710H is best suited for applications where the load
needs to be turned on and off using micro-controllers,
comparators or other control circuits, particularly at a point of
load. It features a discrete pre-biased PNP transistor which
can support continuous maximum current of 100 mA. It also
contains a pre-biased NPN transistor which can be used as a
control and can be biased using a higher supply. The
component devices can be used as a part of circuit or as
stand alone discrete devices.
Features
• Built in Biasing Resistors
• Epitaxial Planar Die Construction
• Ideally Suited for Automated Assembly Processes
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
Mechanical Data
• Case: SOT-563
• Case Material: Molded Plastic. "Green Molding" Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminal Connections: See Fig. 2
• Terminals: Finish - Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
• Marking & Type Code Information: See Page 7
• Ordering Information: See Page 7
• Weight: 0.005 grams (approximate)
Reference
Q1 PNP
Q2 NPN
Device Type
R1 (NOM) R2 (NOM) R3 (NOM) R4 (NOM)
10KΩ 47KΩ
⎯ ⎯
DCX4710H
100mA DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS
4
5
6
Schematic and Pin Configuration
3
2
1
SOT-563
⎯ ⎯
10KΩ 10KΩ
Maximum Ratings: Total Device @T
Characteristic Symbol Value Unit
Output Current
Power Dissipation (Note 3)
Power Derating Factor above 45°C
Junction Operation and Storage Temperature Range
Thermal Resistance, Junction to Ambient Air (Note 3)
(Equivalent to one heated junction of PNP transistor) @ TA = 25°C
Notes: 1. No purposefully added lead.
2 . Diodes Inc.'s "Green" policy can be found on our website at http:/www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; as per Diodes Inc. suggested pad layout document AP02001 on our website
at http://www.diodes.com/datasheets/ap02001.pdf.
DS30871 Rev. 6 - 2 1 of 7
= 25°C unless otherwise specified
A
I
out
P
d
P
der
P
d
R
θJA
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100 mA
150 mW
1.43 mW/°C
-55 to +150 °C
833 °C/W
© Diodes Incorporated
DCX4710H
Sub-Component Device – Pre-Biased PNP Transistor (Q1) @T
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Supply Voltage
Input Voltage
Output Current (dc)
V
CBO
V
CEO
V
CC
V
IN
I
C(max)
Sub-Component Device – Pre-Biased NPN Transistor (Q2) @T
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Supply Voltage
Input Voltage
Output Current (dc)
V
CBO
V
CEO
V
CC
V
IN
I
C(max)
Electrical Characteristics: Pre-Biased PNP Transistor (Q1) @T
OFF CHARACTERISTICS
Collector-Base Cut Off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Input Off Voltage
Output Off Current
ON CHARACTERISTICS
DC Current Gain
Collector-Emitter Saturation Voltage
Output On Voltage
Input On Voltage (Load is present)
Input Current
Input Resistor +/- 30% (Base)
Pull-up Resistor (Base to Vcc supply) R2 32 47 62
Resistor Ratio
SMALL SIGNAL CHARACTERISTICS
Transition Frequency (gain bandwidth product)
*Pulse Test: Pulse width, tp<300 uS, Duty Cycle, d<=0.02
DS30871 Rev. 6 - 2 2 of 7
Characteristic Symbol Min Typ Max Unit Test Condition
I
CBO
V
(BR)CBO
V
(BR)CEO
V
I(OFF)
I
O(OFF)
h
FE
V
CE(sat)
V
O(ON)
V
I(ON)
I
I
ΔR1
Δ(R2/R1)
f
T
⎯ ⎯
-50
-50
⎯ ⎯
⎯ ⎯
80
⎯ ⎯
⎯
-1.4 -0.9
⎯ ⎯
7 10 13
20
⎯
-100 nA
⎯
⎯
-0.3 V
-0.5
⎯ ⎯ ⎯
-0.25 V
-0.1 -0.3 V
⎯
-0.88 mA
20 %
⎯
250
⎯
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= 25°C unless otherwise specified
A
-50 V
-50 V
-50 V
+6 to -40 V
-100 mA
= 25°C unless otherwise specified
A
50 V
50 V
50 V
-10 to +40 V
100 mA
= 25°C unless otherwise specified
A
V
= -50V, IE = 0
CB
V
IC = -10μA, IE = 0
V
IC = -4mA, IB = 0 B
VCE = -5V, IC = -100μA
μA
VCC = -50V, VI = 0V
VCE = -5V, IC = -5mA
IC = -10mA, IB = -0.3mA B
IO/II = -10mA/-0.5mA
V
VO = -0.3V, IC = -2mA
VI = -5V
KΩ
KΩ
⎯
⎯
⎯
VCE = -10V, IE = -5mA,
MHz
f = 100MHz
DCX4710H
© Diodes Incorporated
Pre-Biased NPN Transistor (Q2) @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Collector-Base Cut Off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Input Off Voltage
Output Current
I
CBO
V
(BR)CBO
V
(BR)CEO
V
I(OFF)
I
O(OFF)
⎯ ⎯
50
50
⎯
⎯ ⎯
100 nA
⎯ ⎯
⎯ ⎯
1.2 0.5 V
0.5
ON CHARACTERISTICS
DC Current Gain
Collector-Emitter Saturation Voltage
Output On Voltage
Input On Voltage
Input Current
h
V
CE(sat)
V
O(ON)
V
I(ON)
FE
I
I
35
⎯ ⎯ ⎯
⎯ ⎯
0.1 0.3 V
⎯
3 1.6
⎯ ⎯
0.25 V
0.88 mA
Input Resistor +/- 30% (Base) R1 7 10 13
Resistor Ratio
(R2/R1) 0.8 1 1.2
SMALL SIGNAL CHARACTERISTICS
Transition Frequency (Gain bandwidth product)
*Pulse Test: Pulse width, tp<300 uS, Duty Cycle, d<=0.02
Typical Characteristics @T
= 25°C unless otherwise specified
amb
f
T
⎯
250
V
CB
V
I
C
V
I
C
V
CE
μA
V
CC
V
CE
I
C
I
O/II
⎯
V
V
O
V
I
KΩ
⎯ ⎯
V
⎯
MHz
CE
f = 100MHz
= 50V, IE = 0
= 10μA, IE = 0
= 2mA, IB = 0 B
= 5V, IC = 100μA
= 50V, VI = 0V
= 5V, IC = 5mA
= -10mA, IB = -0.3mA B
= 10mA/0.5mA
= 0.3V, IC = 2mA
= 5V
⎯
= 10V, IE = 5mA,
D
P , POWER DISSIPATION (mW)
0
0
T , AMBIENT TEMPERATURE (°C)
A
Fig. 1 Power Derating Curve (Note 3)
Notes: 3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; as per Diodes Inc. suggested pad layout document AP02001 on our website
at http://www.diodes.com/datasheets/ap02001.pdf.
DS30871 Rev. 6 - 2 3 of 7
www.diodes.com
DCX4710H
© Diodes Incorporated
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