4 CHANNEL LOW CAPACITANCE BI-DIRECTIONAL TVS ARRAY
Features
• Provides ESD Protection per IEC 61000-4-2 Standard:
Air – ±30kV, Contact – ±30kV
• 4 Channels of Bi-Directional ESD Protection
• Low Channel Input Capacitance
• Typically Used at Portable Electronics, Cellular Handsets and
Communication Systems
• Lead Free/RoHS Compliant (Note 1)
• “Green” Device (Note 2)
ADVANCE INFORMATION
TSOT25
Top View
5
4
3
1
Device Schematic
Mechanical Data
• Case: TSOT25
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Weight: 0.013 grams (approximate)
2
Pin Configuration
Ordering Information (Note 3)
Voltage Capacitance # of Channels Polarity # of Pins Package Packing
5V0: 5.0 Volts
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.
X: Extremely Low (<0. 5pF)
F: Ultra Low (0.5 ~ 1.0pF)
P: Very Low (1.1 ~ 10pF)
L: Low (10. 1 ~ 20pF)
M: Medium (>20pF)
Part Number Case Packaging
D5V0L4B5TS-7 TSOT25 3000/Tape & Reel
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
D 5V0 L X B X XXX- XX
1: 1 Chann el
2: 2 Chann els
4: 4 Chann els
6: 6 Chann els
B: Bidire ct i onal
(Symmetrical)
U: Unidirectional
A: Bidire ct i onal
(Asymmetrical)
2: 2 Pins
3: 3 Pins
5: 5 Pins
6: 6 Pins
8: 8 Pins
10: 10 Pi ns
LP3: X3-DFN0603-2
LP: X1-DFN1006-2
LP4: X2-DFN1006-2
WS: SOD323
T: SOD 523/SOT523
SO: SOT23/SOT25
W: SOD 123/SOT323
TS: TSOT25/TSOT26
S: SOT353/SOT363
V:SOT553/SOT563
Marking Information
Date Code Key
Year 2011 2012 2013 2014 2015 2016 2017
Code Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
TB4
TB4 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Z = 2012)
YM
M = Month (ex: 9 = September)
Top View
D5V0L4B5TS
123
54
7: 7” reel (3K/reel)
7B: 7” reel (10Kreel)
13: 13” reel
D5V0L4B5TS
Document number: DS35428 Rev. 6 - 2
1 of 5
www.diodes.com
January 2012
© Diodes Incorporated
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit Conditions
Peak Pulse Power Dissipation
Peak Pulse Current
ESD Protection – Contact Discharge
ESD Protection – Air Discharge
Thermal Characteristics
Characteristic Symbol Value Unit
Package Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating Junction Temperature Range
Storage Temperature Range
ADVANCE INFORMATION
Electrical Characteristics @T
Characteristic Symbol Min Typ Max Unit Test Conditions
Reverse Working Voltage
Breakdown Voltage
Reverse Leakage Current (Note 6)
Clamping Voltage (Note 4) VCL
Differential Resistance
Channel Input Capacitance
Notes: 4. Measured from channel to pin 2; Non-repetitive current pulse per Fig. 2.
5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at
http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
100
= 25°C unless otherwise specified
A
V
RWM
V
BR
I
R
R
DIF
C
T
P
PP
I
PP
V
ESD_Contac
V
ESD_Ai
-
84 W
6 A
±30 kV Standard IEC 61000-4-2
±30 kV Standard IEC 61000-4-2
P
D
R
T
T
STG
JA
J
-65 to +150
-65 to +150
- 5.0 V -
6 7 8 V
- 10 100 nA
-
-
-
-
7.0 9.0 V
8.7 10.7 V
10.5 12.0 V
11.5 14.0 V
- 0.2 - Ω
- 15 20 pF
8/20μs, Per Fig. 2
8/20μs, Per Fig. 2
300 mW
417
IR = 1.0mA
V
I
PP
I
PP
I
PP
I
PP
IR = 1.0A, tp = 8/20μs
V
(Channel to Pin 2)
D5V0L4B5TS
= 5V
RWM
= 1A, tp = 8/20μs
= 3A, tp = 8/20μs
= 5A, tp = 8/20μs
= 6A, tp = 8/20μs
= 0V, f = 1MHz
IN
°C/W
°C
°C
F
100
75
IN %
50
50
LSE DE
25
PEAK POWER OR CURRENT
EAK
PppP
I , PEAK PULSE CURRENT (%I )
0
0 25 50 75 100 125 150 175 200
T , AMBIENT TEMPERA TURE (°C)
A
Fig. 1 Pulse Derating Curve
0
0
20 40
t, TIME ( s)
μ
Fig. 2 Pulse Waveform
60
D5V0L4B5TS
Document number: DS35428 Rev. 6 - 2
2 of 5
www.diodes.com
January 2012
© Diodes Incorporated