Diodes D5V0L2B3SO User Manual

2 CHANNEL LOW CAPACITANCE BI-DIRECTIONAL TVS ARRAY

Features

• Provides ESD Protection per IEC 61000-4-2 Standard:
Air – ±30kV, Contact – ±30kV

• 2 Channels of Bi-Directional ESD Protection

• Low Channel Input Capacitance

• Typically Used in Cellular Handsets, Portable Electronics,

Communication Systems, Computers and Peripherals

• Lead Free/RoHS Compliant (Note 1)

• “Green” Device (Note 2)

ADVANCE INFORMATION

Top View

Mechanical Data

• Case: SOT23

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

• Weight: 0.0089 grams (approximate)

3

12

Pin Configuration

1

2

Device Schematic

Ordering Information (Note 3)

Voltage Capaci tance # of Chann els Polarity # of Pins Package Packing

5V0: 5.0 Volts

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.

2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

X: Extremely Low (< 0.5pF)

F: Ultra Low (0.5 ~ 1.0pF)

P: Very Low (1.1 ~ 10pF)

L: Low (10. 1 ~ 20pF)

M: Medium (>20pF)

Part Number Case Packaging

D5V0L2B3SO-7 SOT23 3000/Tape & Reel

D 5V0 L X B X XXX- XX

1: 1 Channel
2: 2 Channels
4: 4 Channels
6: 6 Channels

B: Bidirect ional

(Symmetrical)

U: Unidirecti onal

A: Bidirect ional
(Asymmetrical)

2: 2 Pins
3: 3 Pins
5: 5 Pins
6: 6 Pins
8: 8 Pins

10: 10 Pins

LP3: X3-D FN0603-2

LP: X1-DFN1006-2

LP4: X2-D FN1006-2

T: SOD 523/SOT52 3

SO: SOT23/SO T2 5

W: SOD123/SOT 323

TS: TSOT25/TSOT26

S: SOT353/SOT363

V:SOT553/SOT563

Marking Information

Date Code Key

Year 2011 2012 2013 2014 2015 2016 2017

Code Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

D5V0L2B3SO

Document number: DS35430 Rev. 5 - 2



TB2

TB2 = Product Type Marking Code
YM = Date Code Marking

YM

Y = Year (ex: Z = 2012)
M = Month (ex: 9 = September)

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WS: SOD323

D5V0L2B3SO

3

7: 7” reel (3K/reel)

7B: 7” reel (10Kreel)

13: 13” re el

© Diodes Incorporated

January 2012

t

r

θ

P

P

U

R

T

G

O

F

Maximum Ratings @T

A

Characteristic Symbol Value Unit Conditions

Peak Pulse Power Dissipation
Peak Pulse Current
ESD Protection – Contact Discharge

ESD Protection – Air Discharge

Thermal Characteristics

Characteristic Symbol Value Unit

Package Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating Junction Temperature Range
Storage Temperature Range

ADVANCE INFORMATION

= 25°C unless otherwise specified

P

PP

I

PP

V

ESD_Contac

V

ESD_Ai

P

R

T

T

STG

D5V0L2B3SO

84 W

6 A
±30 kV Standard IEC 61000-4-2
±30 kV Standard IEC 61000-4-2

D
JA
J

-65 to +150

-65 to +150

8/20μs, Per in Fig. 1
8/20μs, Per in Fig. 1

300 mW
417

°C/W

°C
°C

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Conditions

Reverse Working Voltage
Breakdown Voltage
Reverse Leakage Current (Note 6)

V

RWM

V

I

BR
R

-

6 7 8 V

- 10 100 nA

-

Clamping Voltage (Note 4) VCL

-

-

-

Differential Resistance
Channel Input Capacitance

Notes: 4. Measured from channel to pin 3; Non-repetitive current pulse per Fig. 1.

5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at
http://www.diodes.com.

6. Short duration pulse test used to minimize self-heating effect.

R

DIF

C

T

- 0.2 - Ω

- 15 20 pF

100

- 5.0 V ­IR = 1.0mA
V

= 5V

7.0 9.0 V

8.7 10.7 V

10.5 12.0 V

11.5 14.0 V

RWM

I

= 1A, tp = 8/20μs

PP

I

= 3A, tp = 8/20μs

PP

I

= 5A, tp = 8/20μs

PP

I

= 6A, tp = 8/20μs

PP

IR = 1.0A, tp = 8/20μs
V

= 0V, f = 1MHz

IN

(Channel to Pin 3)

100

75

IN %
IN

A

50

50

LSE DE

25

PEAK POWER OR CURRENT

EAK

PppP

I , PEAK PULSE CURRENT (%I )

0

0

20 40

t, TIME ( s)

μ

Fig. 1 Typical 8 x 20µs Pulse Wavef orm

60

0

0

25 50

T , AMBIENT TEMPERATURE (°C)

A

75 100 125

150

175 200

Fig. 2 Pulse Derating Curve

D5V0L2B3SO

Document number: DS35430 Rev. 5 - 2

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January 2012

© Diodes Incorporated