Diodes D5V0L1B2T User Manual
Features
• Provides ESD Protection per IEC 61000-4-2 Standard:
Air ±30kV, Contact ±30kV
• 1 Channel of ESD Protection
• Low Channel Input Capacitance
• Typically Used in Cellular Handsets, Portable Electronics,
Communication Systems, Computers and Peripherals
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
ADVANCE INFORMATION
SOD523
Top View
D5V0L1B2T
LOW CAPACITANCE BIDIRECTIONAL TVS DIODE
Mechanical Data
• Case: SOD523
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Weight: 0.001 grams (approximate)
1
Device Schematic
2
Ordering Information (Note 4)
D 5V0 L X B X XXX- XX
Vol t age Capaci t ance # of Chann el s Polarity # o f P in s Package Packing
5V0: 5.0 Volts
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
5. Dispensed every other cavity of the carrier tape.
X: Extremely Low (< 0.5pF)
F: Ultra Low (0.5 ~ 1.0pF)
P: Very Low (1.1 ~ 10pF)
L: Low (10.1 ~ 20pF)
M: Medium (>20pF)
Part Number Case Packaging
D5V0L1B2T-7 (Note 4) SOD523 3000/Tape & Reel
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
1: 1 Channel
2: 2 Channel s
4: 4 Channel s
6: 6 Channel s
B: Bidirectional
(Symmetrical)
U: Uni directional
A: Bidirectional
(Asymmetrical)
2: 2 Pins
3: 3 Pins
5: 5 Pins
6: 6 Pins
8: 8 Pins
10: 10 Pins
LP3: X3-D FN0603-2
LP: X1-DFN1006-2
LP4: X2-D FN1006-2
WS: SOD323
T: SOD 523/SOT523
SO: SOT23/SOT25
W: SOD 123/SOT323
TS: TSOT25/TSOT26
S: SOT353/SOT363
V:SOT553/SOT563
7: 7” reel
7B: 7” reel
13: 13” reel
(DFN1006
Packag e O nly)
Marking Information
D5V0L1B2T
Document number: DS35597 Rev. 5 - 2
6 / 9
6 / 9 = Product Type Marking Code
1 of 4
www.diodes.com
© Diodes Incorporated
June 2012
t
r
θ
P
P
U
RAT
N
G
O
F
D5V0L1B2T
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit Conditions
Peak Pulse Power Dissipation
Peak Pulse Current
ESD Protection – Contact Discharge
ESD Protection – Air Discharge
P
PP
I
PP
V
ESD_Contac
V
ESD_Ai
84 W
6 A
8/20μs, per Fig. 2
8/20μs, per Fig. 2
±30 kV IEC 61000-4-2 Standard
±30 kV IEC 61000-4-2 Standard
Thermal Characteristics
Characteristic Symbol Value Unit
Package Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
P
D
R
JA
T
, T
J
STG
ADVANCE INFORMATION
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Conditions
Reverse Standoff Voltage
Channel Leakage Current (Note 7)
Clamping Voltage, Positive Transients
Breakdown Voltage
Differential Resistance
Channel Input Capacitance
Notes: 6. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at
http://www.diodes.com.
7. Short duration pulse test used to minimize self-heating effect.
V
R
RWM
I
RM
V
V
DIF
C
CL
BR
IN
- - 5 V -
- 10 100 nA
-
-
-
-
7.0
8.7
10.5
11.5
9.0
10.7
12.0
14.0
6 7 8 V
-
0.2 -
- 15 20 pF
100
150 mW
833
-65 to +150
V
= 5V
RWM
I
= 1A, tp = 8/20μS
PP
= 3A, tp = 8/20μS
I
PP
V
I
= 5A, tp = 8/20μS
PP
= 6A, tp = 8/20μS
I
PP
IR = 1mA
Ω
I
= 1A, tp = 8/20μS
R
VR = 0V, f = 1MHz
°C/W
°C
75
100
%
I
50
LSE DE
25
EAK
PEAK POWER OR CURRENT
0
0
25 50
T , AMBIENT TEMPERATURE (°C)
A
75 100 125
Fig. 1 Pow er Dissipat ion vs. A m bient Temperat ur e
150
175 200
50
PppP
I , PEAK PULSE CURRENT (%I )
0
0
20 40
t, TIME ( s)
μ
60
Fig. 2 Pulse Waveform
D5V0L1B2T
Document number: DS35597 Rev. 5 - 2
2 of 4
www.diodes.com
June 2012
© Diodes Incorporated
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